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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH180N10F3-6

Name: STH180N10F3-6
Brand: STMicroelectronics
SKU: STH180N10F3-6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH180N10F3-6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: STH180N10F3-6.pdf

Description:: MOSFET N-CH 100V 180A H2PAK-6

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Product details

Overview

STH180N10F3-6 from STMicroelectronics is an N-channel 100 V, 3.9 mΩ typ. R_DS(on), 180 A continuous drain current Power MOSFET in H²PAK-6 package, fabricated using STripFET™ F3 technology. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the STH180N10F3-6 datasheet, STH180N10F3-6 pinout, STH180N10F3-6 application, or STH180N10F3-6 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 350 mJ single-pulse avalanche energy, 114.6 nC total gate charge, thermal resistance (0.48 °C/W junction-to-case), and H²PAK-6 mounting compatibility with FR-4 PCBs.

Technical Context

This device operates as a high-current, high-voltage switching element with gate threshold voltage of 2–4 V and guaranteed 100% avalanche ruggedness. Its STripFET™ F3 process enables reduced gate charge (Q_g = 114.6 nC) and optimized capacitance profile (C_iss = 6665 pF, C_rss = 49 pF), supporting hard-switching topologies up to 100 kHz.

The integrated source-drain diode exhibits 1.5 V forward voltage at 120 A and 83.4 ns reverse recovery time under 100 A/µs di/dt, enabling synchronous rectification and inductive load control without external freewheeling diodes in many applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V and 60 V bus systems with margin
R_DS(on) max	4.5 mΩ @ V_GS = 10 V, I_D = 60 A - Enables <1 W conduction loss at 150 A in thermally optimized layouts
I_D cont @ T_C = 25 °C	180 A - Supports high-current power stages without parallel devices
E_AS	350 mJ - Withstands unclamped inductive switching events in motor control and solenoid drivers
Q_g	114.6 nC - Determines gate driver power requirement and switching speed trade-off
R_thj-case	0.48 °C/W - Requires heatsink interface ≤0.5 °C/W to maintain T_J < 175 °C at full load
t_r/t_f	97.1 ns / 6.9 ns - Enables fast turn-on with minimal overlap loss in half-bridge configurations

Pinout & Package

H²PAK-6 is a surface-mount, thermally enhanced power package with isolated tab (drain-connected) and six gull-wing leads. The metal tab provides direct thermal path to heatsink while minimizing parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
TAB	Drain (D)	Exposed copper pad - electrically and thermally connected to drain; must be soldered to PCB copper pour or heatsink
Pin 1	Source (S)	Low-side return path; connects to power ground plane with minimal loop inductance
Pin 2	Source (S)	Parallel source connection to reduce resistance and improve current sharing
Pin 3	Source (S)	Third source terminal for high-current routing and thermal spreading
Pin 4	Gate (G)	Control input; requires low-inductance gate resistor (e.g., 4.7 Ω) to damp ringing
Pin 5	Source (S)	Fourth source terminal - enhances thermal dissipation and reduces source inductance
Pin 6	Source (S)	Fifth source terminal - completes low-impedance source network for 180 A operation

Key Features

Feature	Design Value
STripFET™ F3 process	Reduces R_DS(on) × Q_g figure-of-merit by ~25% vs prior generation, improving efficiency in high-frequency SMPS
100% avalanche tested	Guarantees robustness against inductive kickback without derating - critical for motor phase-leg reliability
Low C_rss (49 pF)	Minimizes Miller effect, enabling stable gate drive with moderate gate resistance and reducing risk of false turn-on
H²PAK-6 thermal performance	0.48 °C/W R_thj-case allows >250 W power dissipation with standard heatsink, eliminating need for forced air in many designs
Fast diode recovery (t_rr = 83.4 ns)	Enables use in synchronous buck converters without external Schottky diode, reducing BOM count and layout area

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Three-phase BLDC motor inverter stage operating at 48 V bus, 150 A peak phase current.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack configuration, switching at 16–20 kHz.

Use Value: Low R_DS(on) minimizes conduction loss; 350 mJ E_AS ensures safe commutation during fault conditions without snubbers.

Use Scenario: 1 kW isolated full-bridge DC-DC converter for telecom power shelf (48 V input to 12 V output).

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in ZVS-enabled full-bridge topology.

Use Value: Low Q_g and C_iss support zero-voltage switching at 100 kHz; H²PAK-6 thermal design simplifies heatsinking on primary side.

Server PSU Primary Switch

Solar Microinverter Half-Bridge

Use Scenario: 2 kW server power supply using LLC resonant topology with 54 V nominal input.

IC Role / Device Role / Timing Role: Primary-side switch handling 180 A pulsed current during resonance cycles.

Use Value: 720 A pulsed drain current rating supports peak LLC currents; low C_oss (786 pF) improves resonant tank efficiency.

Use Scenario: 300 W microinverter converting PV panel output (30–60 V) to grid-synchronized 230 V AC.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge inverter leg, operating with unipolar PWM at 20 kHz.

Use Value: Fast t_f (6.9 ns) and low V_SD (1.5 V) reduce switching and conduction losses in bidirectional current paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH180N10P	R_DS(on) = 4.0 mΩ (typ), Q_g = 135 nC, TO-247 package	Higher gate charge increases driver loss; through-hole mounting limits board density	Preferred where legacy TO-247 heatsink infrastructure exists and gate drive capability exceeds 2 A peak
IRFP4868PbF	R_DS(on) = 3.8 mΩ (typ), Q_g = 145 nC, TO-247AC package	Larger C_iss (7200 pF) and slower t_r/t_f limit usable frequency to ≤50 kHz	Selected when cost sensitivity outweighs switching loss and board space constraints

Compared with IXFH180N10P and IRFP4868PbF, STH180N10F3-6 offers superior R_DS(on) × Q_g trade-off and surface-mount thermal performance, making it optimal for compact, high-frequency, high-reliability power stages where PCB real estate and thermal management are constrained.

Availability

STH180N10F3-6 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for STH180N10F3-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ F3 Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion and motor control applications.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet Table 2. For long-term reliability, ST recommends limiting V_GS to +15 V during normal switching and avoiding negative gate bias below –10 V. Gate oxide integrity is preserved within this range, and typical gate drivers (e.g., UCC27531) operate safely at 12–15 V drive.

Can STH180N10F3-6 be used in paralleled configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Figure 11) ensures inherent current sharing across paralleled units. Layout symmetry, matched gate drive impedance, and shared source inductance are critical; ST recommends ≤1 nH per source path difference to avoid dynamic imbalance above 100 kHz.

Is the H²PAK-6 package RoHS and REACH compliant?

Yes - the device carries ECOPACK®2 compliance, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead-free termination and halogen-free molding compound are confirmed in ST's official material declarations (DocID026719).

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 120 A (Table 2). The SOA curve (Figure 2) shows that pulse operation up to 720 A is permitted only for ≤100 µs pulses with duty cycle ≤1.5%, due to thermal and avalanche limits - sustained operation beyond 120 A requires active cooling or derating.

STH180N10F3-6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 114.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6665 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 315W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-6

STH180N10F3-6 FAQ

1.How can I place an order for STH180N10F3-6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH180N10F3-6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH180N10F3-6 reliable?

The price and inventory of STH180N10F3-6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH180N10F3-6 is usually 5 days.

3.What payment methods are accepted for STH180N10F3-6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH180N10F3-6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH180N10F3-6?

STH180N10F3-6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH180N10F3-6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH180N10F3-6?

For technical support, including STH180N10F3-6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH180N10F3-6 requirements.

6.How does Aetrix verify that STH180N10F3-6 is sourced from the original manufacturer or authorized distributors?

All STH180N10F3-6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH180N10F3-6 meets industry standards.

7.What is the process for return or replacement of STH180N10F3-6?

All STH180N10F3-6 units undergo pre-shipment inspection (PSI). If there is an issue with STH180N10F3-6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH180N10F3-6 part is unused and in its original packaging.

Return procedure for STH180N10F3-6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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