STMicroelectronics STH210N75F6-2

Overview

STH210N75F6-2 from STMicroelectronics is an N-channel 75 V, 2.7 mΩ typ. R_DS(on), 180 A continuous drain current Power MOSFET in H²PAK-2 package, built on STripFET™ VI DeepGATE™ technology. It delivers ultra-low conduction loss and high avalanche ruggedness (540 mJ), targeting high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STH210N75F6-2 datasheet, STH210N75F6-2 pinout, STH210N75F6-2 application, or STH210N75F6-2 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 720 A pulsed current capability, thermal resistance (0.5 °C/W junction-to-case), reverse recovery performance (60 ns t_rr, 4.8 nC Q_rr), and H²PAK-2 mounting requirements.

Technical Context

This MOSFET employs a proprietary DeepGATE™ gate structure that reduces gate charge (171 nC total) while maintaining low output capacitance (C_oss = 1060 pF) and minimizing reverse transfer capacitance (C_rss = 394 pF). Its optimized cell layout enables stable operation up to T_j = 175 °C with derating of 2 W/°C beyond 25 °C case temperature.

The device integrates a robust intrinsic body diode with 180 A continuous source-drain current rating and fast, soft reverse recovery (t_rr = 60 ns, I_RRM = 4.8 A) - critical for synchronous rectification and hard-switched topologies where diode losses dominate efficiency.

Key Specifications

Pinout & Package

H²PAK-2 is a surface-mount, thermally enhanced power package with isolated tab (drain-connected), three solder terminals, and optimized thermal path to PCB copper. The package supports high-current routing and meets ECOPACK® environmental compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V Power MOSFET applications.

Compared with IXFN210N75X3, STH210N75F6-2 offers 11% lower R_DS(on) and 12% lower Q_g in a surface-mount package with 33% lower R_thj-case, enabling higher power density and faster switching in space-constrained telecom and server designs.

Availability

STH210N75F6-2 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom PSUs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for STH210N75F6-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ VI Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 48 V infrastructure power systems including datacenter supplies and renewable energy inverters.

FAQ

What is the maximum safe operating temperature for STH210N75F6-2?

The absolute maximum junction temperature is 175 °C, but continuous operation above 150 °C degrades long-term reliability. For 180 A continuous current, case temperature must be held ≤ 100 °C using a heatsink with R_thj-case ≤ 0.5 °C/W and adequate airflow. Derating begins at 25 °C case temperature at 2 W/°C.

Can STH210N75F6-2 replace older STripFET™ V devices in existing designs?

Yes - it is a direct drop-in replacement for STH210N75F5 in H²PAK-2, offering 12% lower R_DS(on) and 8% lower Q_g. No PCB or gate driver changes are needed, though thermal performance improves measurably due to reduced conduction loss and identical package outline.

Does the body diode support synchronous rectification without external drivers?

No - the intrinsic body diode conducts only when V_GS = 0. For synchronous rectification, an external gate driver must actively turn on the MOSFET during the freewheeling interval. The diode's 60 ns t_rr and soft recovery enable clean commutation when driven correctly.

What is the recommended PCB footprint for optimal thermal performance?

Per Figure 20 in the datasheet, use a 10 mm × 15 mm exposed copper pad connected to ≥2 oz internal ground planes via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). The footprint must match H²PAK-2 mechanical dimensions: L = 15.3–15.8 mm, W = 10.0–10.4 mm, and tab overhang ≥ 0.2 mm beyond solder mask opening.