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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH22N95K5-2AG

Name: STH22N95K5-2AG
Brand: STMicroelectronics
SKU: STH22N95K5-2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH22N95K5-2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH22N95K5-2AG.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STH22N95K5-2AG from STMicroelectronics is an AEC-Q101 qualified automotive-grade N-channel 950 V Power MOSFET using MDmesh K5 vertical structure technology, delivering 280 mΩ typ. R_DS(on), 17.5 A continuous drain current at T_C = 25 °C, and 250 W total power dissipation in H²PAK-2 package - optimized for high-voltage switching in on-board chargers and DC-DC converters.

For engineers reviewing the STH22N95K5-2AG datasheet, STH22N95K5-2AG pinout, STH22N95K5-2AG application, or STH22N95K5-2AG equivalent, key selection criteria include ultra-low gate charge (48 nC), 100% avalanche-tested ruggedness (E_AS = 182 mJ), Zener-protected gate, and industry-leading FoM for high-density 800 V+ systems.

Technical Context

This device implements a proprietary MDmesh K5 vertical superjunction architecture enabling 950 V breakdown with 280 mΩ typ. R_DS(on) - achieving best-in-class figure of merit (R_DS(on) × Q_g). Its Zener-protected gate and 5 kV HBM ESD rating support robust gate drive in noisy automotive environments.

The integrated source-drain diode features 1.5 V forward voltage at 17.5 A and 513 ns reverse recovery time at 150 °C, while dv/dt ruggedness is rated to 50 V/ns under V_DS ≤ 760 V - critical for reliable operation in hard-switched PFC and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	950 V - supports 800 V AC mains-derived bus designs with 15% margin for transient overvoltage.
R_DS(on) max	330 mΩ - enables low conduction loss in 17.5 A continuous switching applications at T_C = 25 °C.
Q_g	48 nC - reduces gate drive power and enables faster switching with lower E_SW in high-frequency converters.
E_AS	182 mJ - guarantees unclamped inductive switching reliability without external snubbers in motor drives.
R_thJC	0.5 °C/W - allows 250 W dissipation with only 125 °C junction-to-case temperature rise at steady state.
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during fast voltage transients in bridge-leg configurations.
V_GS(th)	3–5 V - ensures clean logic-level gate drive compatibility with standard 10 V gate drivers.

Pinout & Package

H²PAK-2 package: thermally enhanced surface-mount outline with isolated tab (drain-connected), 3-terminal configuration (Gate, Source×2, Drain via tab), footprint optimized for high-current PCB routing and thermal vias under tab.

Pin/Terminal	Circuit Role	Design Meaning
TAB	Drain (D)	Exposed metal pad - primary thermal path and high-current drain connection; electrically tied to drain terminal.
1	Gate (G)	Control input - accepts 0–10 V logic-compatible drive; Zener-protected against ±30 V transients.
2,3	Source (S)	Common source node - dual pins reduce bond-wire inductance and improve current sharing in high-di/dt switching.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood use: HTRB at 80% V(BR)DSS, TC = 150 °C, 1000 hrs, per rev. C/D.
MDmesh K5 vertical structure	Reduces R_DS(on) × area by >30% vs prior-generation 950 V superjunction MOSFETs - enabling smaller heatsinks.
Ultra-low Q_g/Q_gd ratio	Q_gd = 32.5 nC of total 48 nC Q_g - improves Miller immunity and reduces switching losses in hard-switched PFC.
100% avalanche tested	Each unit subjected to single-pulse unclamped inductive switching at I_AR = 6 A, E_AS = 182 mJ - no screening failures.
Zener-protected gate	Integrated gate-source Zener clamps transients up to ±30 V - eliminates need for external gate protection components.

Applications

On-Board Charger (OBC)

Industrial DC-DC Converter

Use Scenario: Bidirectional 3.3 kW OBC stage converting 400 V battery to 400 V AC grid with SiC/GaN-assisted hybrid topology.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC and CLLC resonant DC-DC stages operating at 100–300 kHz.

Use Value: 280 mΩ R_DS(on) and 48 nC Q_g enable >98% peak efficiency while maintaining <125 °C T_J at full load.

Use Scenario: 1.5 kW isolated DC-DC module for railway signaling powering 24 V/48 V auxiliary loads from 1500 V overhead line.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge converter with ZVS operation at 125 kHz.

Use Value: 50 V/ns dv/dt ruggedness and 182 mJ E_AS ensure reliable ZVS transition under wide input voltage range (800–1800 V).

EV Traction Inverter Auxiliary Supply

High-Voltage Industrial Motor Drive

Use Scenario: 500 W auxiliary power supply deriving 12 V from 800 V traction battery for vehicle control units and sensors.

IC Role / Device Role / Timing Role: Primary switch in flyback converter operating in discontinuous conduction mode (DCM) at 200 kHz.

Use Value: Low Q_gd/Q_g ratio minimizes duty-cycle distortion during light-load burst-mode operation.

Use Scenario: 7.5 kW variable-frequency drive for HVAC compressors in data center cooling systems with 690 V AC input.

IC Role / Device Role / Timing Role: Brake chopper switch dissipating regenerative energy into dynamic braking resistor during deceleration.

Use Value: 250 W PTOT and 0.5 °C/W R_thJC allow sustained 10 s brake pulses at 17.5 A without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N95K5	Same MDmesh K5 die, but TO-247-3L package; R_DS(on) = 330 mΩ max, Q_g = 48 nC, PTOT = 250 W.	No exposed drain tab; higher R_thJC = 0.75 °C/W limits power density in space-constrained modules.	Select when mechanical mounting constraints prohibit surface-mount or when legacy TO-247 heatsink tooling exists.
IXTH20N90L2	900 V, 320 mΩ max, 20 A, Q_g = 52 nC, R_thJC = 0.65 °C/W; not AEC-Q101 qualified.	Lacks automotive qualification and Zener gate protection; E_AS = 120 mJ - lower unclamped energy handling.	Select for industrial UPS or solar inverters where AEC-Q101 is unnecessary and cost sensitivity outweighs automotive reliability needs.

Compared with STW20N95K5 and IXTH20N90L2, STH22N95K5-2AG delivers superior power density via H²PAK-2's 0.5 °C/W R_thJC and automotive-grade ruggedness - making it optimal for space- and reliability-critical EV and rail applications where surface-mount integration and transient immunity are mandatory.

Availability

STH22N95K5-2AG is available at Aetrix Electronics and suitable for on-board chargers, industrial DC-DC converters, and high-voltage motor drives requiring stable component supply across automotive production ramps and industrial equipment lifecycles.

Supply support for STH22N95K5-2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

This device belongs to ST's MDmesh K5 high-voltage superjunction MOSFET product line, engineered specifically for 800–1000 V systems demanding highest power density, lowest switching loss, and automotive-grade reliability in EV and industrial infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STH22N95K5-2AG supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12151 Rev 6. This derating reflects thermal limitations of the H²PAK-2 package and ensures safe operation within the SOA boundary at elevated ambient conditions typical in engine bay or enclosed industrial enclosures.

Does this MOSFET include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source, clamping transient voltages to ±30 V. This eliminates the need for external gate protection components in automotive and industrial environments where ESD and load-dump events are common, as confirmed in the "Features" section and absolute maximum ratings table.

Can STH22N95K5-2AG be used in zero-voltage switching (ZVS) topologies?

Yes - its 50 V/ns dv/dt ruggedness (tested at V_DS ≤ 760 V) and low Q_gd/Q_g ratio (32.5 nC / 48 nC) provide strong immunity to false turn-on during resonant transitions. Verified in phase-shifted full-bridge and LLC applications per ST application note AN5092.

What is the recommended PCB layout for thermal performance?

Mount the H²PAK-2 tab directly to a large copper pour with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner-layer ground/power planes. Per Figure 21 in DS12151, the recommended footprint uses 10.2 mm × 15.5 mm thermal pad with solder mask defined for optimal thermal transfer and mechanical adhesion.

STH22N95K5-2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 330mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1550 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH22N95K5-2AG FAQ

1.How can I place an order for STH22N95K5-2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STH22N95K5-2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH22N95K5-2AG reliable?

The price and inventory of STH22N95K5-2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH22N95K5-2AG is usually 5 days.

3.What payment methods are accepted for STH22N95K5-2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH22N95K5-2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH22N95K5-2AG?

STH22N95K5-2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH22N95K5-2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH22N95K5-2AG?

For technical support, including STH22N95K5-2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH22N95K5-2AG requirements.

6.How does Aetrix verify that STH22N95K5-2AG is sourced from the original manufacturer or authorized distributors?

All STH22N95K5-2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH22N95K5-2AG meets industry standards.

7.What is the process for return or replacement of STH22N95K5-2AG?

All STH22N95K5-2AG units undergo pre-shipment inspection (PSI). If there is an issue with STH22N95K5-2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH22N95K5-2AG part is unused and in its original packaging.

Return procedure for STH22N95K5-2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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