STMicroelectronics STH240N10F7-2

Overview

STH240N10F7-2 from STMicroelectronics is an N-channel 100 V, 2.5 mΩ (max), 180 A Power MOSFET in H²PAK-2 package, utilizing STripFET™ F7 trench-gate technology for ultra-low R_DS(on) and optimized switching performance. It serves as a high-current primary-side switch in DC-DC converters, motor drives, and industrial power supplies where low conduction loss and avalanche ruggedness are critical.

For engineers reviewing the STH240N10F7-2 datasheet, STH240N10F7-2 pinout, STH240N10F7-2 application, or STH240N10F7-2 equivalent, key selection criteria include its 0.5 °C/W junction-to-case thermal resistance, 160 nC total gate charge, 217 pF Crss/Ciss ratio for EMI immunity, and 500 mJ single-pulse avalanche energy rating under defined test conditions.

Technical Context

This MOSFET employs STripFET™ F7's enhanced trench gate structure to simultaneously reduce R_DS(on) (2.5 mΩ max at V_GS = 10 V, I_D = 60 A) and internal capacitances-C_iss = 11550 pF, C_oss = 2950 pF, Crss = 217 pF-enabling fast switching with low gate drive loss. Its low Crss/Ciss ratio improves noise immunity in high-dV/dt environments.

The device supports continuous drain current up to 180 A at T_C = 25 °C and 120 A at T_C = 100 °C, with safe operating area (SOA) validated for pulse widths up to 200 ms. Avalanche capability is characterized at 500 mJ (T_j = 25 °C, I_D = 45 A, V_DD = 50 V), confirming robustness in unclamped inductive switching.

Key Specifications

Pinout & Package

H²PAK-2 package: thermally enhanced surface-mount outline with isolated tab (drain), single gate pin, and dual-source pins. Optimized for PCB copper area mounting with 0.5 °C/W R_thj-case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IXFH180N10P and IPB180N10N3 G, STH240N10F7-2 delivers the lowest R_DS(on) and best Crss/Ciss ratio among H²PAK-packaged 100 V MOSFETs, making it optimal for space-constrained, high-frequency, high-reliability industrial power stages requiring both low loss and robust transient handling.

Availability

STH240N10F7-2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STH240N10F7-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ F7 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STH240N10F7-2 supports 120 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS10259 Rev 3. This rating is limited by package thermal constraints-not silicon-making thermal design of the PCB copper area critical to achieving full current capability.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 2.5–4.5 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended, as the absolute maximum V_GS rating is ±20 V but no benefit is gained from negative bias in standard hard-switched applications.

Can the H²PAK-2 package be hand-soldered using reflow or hot-air tools?

Yes-H²PAK-2 is qualified for lead-free reflow per JEDEC J-STD-020. Hand-soldering is feasible with hot-air stations set to 350–370 °C preheat and 400 °C nozzle tip, using flux-core solder paste and ensuring uniform heating of the tab. Thermal relief on the drain pad must be minimized to avoid cold joints.

Is the source-drain diode suitable for synchronous rectification?

Yes-the body diode exhibits V_SD = 1.2 V at 180 A and t_rr = 108 ns at 150 °C, with Q_rr = 315 nC. While not optimized like dedicated Schottky diodes, its fast recovery and low forward drop make it usable in moderate-frequency synchronous rectification, provided dead-time control prevents cross-conduction.