STMicroelectronics STH240N10F7-6

Overview

STH240N10F7-6 from STMicroelectronics is an N-channel 100 V, 2 mΩ typ. (2.5 mΩ max), 180 A Power MOSFET in H²PAK-6 package, utilizing STripFET™ F7 trench-gate technology for ultra-low R_DS(on) and optimized switching performance. It delivers high avalanche ruggedness (500 mJ EAS), low Crss/Ciss ratio for EMI immunity, and is engineered for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STH240N10F7-6 datasheet, STH240N10F7-6 pinout, STH240N10F7-6 application, or STH240N10F7-6 equivalent, key selection criteria include its 0.5 °C/W R_thj-case, 160 nC total gate charge, 108 ns reverse recovery time, and H²PAK-6 thermal pad layout compatibility with high-current PCB heatsinking.

Technical Context

This MOSFET employs an enhanced trench gate structure that reduces both R_DS(on) and gate charge while maintaining robust safe operating area (SOA) up to 100 µs at 100 V/180 A. Its Crss/Ciss ratio of ~1.9% (217 pF / 11550 pF) minimizes Miller-induced switching instability under fast dv/dt conditions.

The device supports high-current pulsed operation (IDM = 720 A) and features a low 1.2 V source-drain forward voltage at 180 A, enabling efficient synchronous rectification. Thermal resistance junction-to-case is fixed at 0.5 °C/W, confirming direct metal tab conduction path design in the H²PAK-6 package.

Key Specifications

Pinout & Package

H²PAK-6 package features a single large exposed copper drain tab (D) on the underside, with three source terminals (S) and one gate terminal (G) on the top side. The mechanical outline includes six leads: Tab (D), Pin 1 (G), Pins 2–3–4–5–6–7 (S). Thermal performance relies on soldering the tab directly to a PCB copper pour or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IXFH180N10P and IPB180N10N3G, STH240N10F7-6 uniquely balances lowest R_DS(on), highest EAS, and industry-leading Crss/Ciss ratio-making it optimal for high-reliability, high-power-density applications where both conduction and switching losses must be minimized under transient stress.

Availability

STH240N10F7-6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for STH240N10F7-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ F7 high-voltage power MOSFET product line, developed specifically for high-efficiency, high-current switching in next-generation power conversion systems demanding ultra-low R_DS(on) and robust avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STH240N10F7-6 supports 120 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS10259 Rev 3. This rating accounts for thermal derating and package current-handling limits-not just silicon capability-and assumes proper PCB copper area and airflow per the H²PAK-6 footprint guidelines.

Does this MOSFET have a built-in body diode, and what are its key parameters?

Yes, it integrates a fast, low-V_SD body diode rated for 180 A continuous and 720 A pulsed source-drain current. Key specs include 1.2 V forward voltage at 180 A, 108 ns reverse recovery time (t_rr), 315 nC reverse recovery charge (Q_rr), and 5.8 A peak reverse recovery current (I_RRM)-all measured at T_j = 150 °C and di/dt = 100 A/µs.

Can STH240N10F7-6 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 12) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal mass. ST recommends limiting parallel count to ≤4 devices with individual 10 Ω gate resistors and Kelvin source routing to avoid oscillation.

What is the recommended gate drive voltage range and why?

The absolute maximum V_GS is ±20 V, but ST specifies 10 V as the standard gate drive for full R_DS(on) enhancement. Driving at 12–15 V yields marginal R_DS(on) improvement (<3%) while increasing gate oxide stress and ESD risk. Below 4.5 V, the device operates in linear mode with excessive conduction loss-so 10 V ±0.5 V is the optimal balance of performance, reliability, and drive simplicity.