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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH240N75F3-6

Name: STH240N75F3-6
Brand: STMicroelectronics
SKU: STH240N75F3-6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH240N75F3-6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: STH240N75F3-6.pdf

Description:: MOSFET N-CH 75V 180A H2PAK-6

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Product details

Overview

STH240N75F3-6 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in H²PAK-6 package, rated for 75 V V_DS, 2.6 mΩ typ. R_DS(on) at V_GS = 10 V and 90 A, with 180 A continuous drain current at T_C = 25 °C. It delivers low conduction loss and ultra-low parasitic inductance for high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the STH240N75F3-6 datasheet, STH240N75F3-6 pinout, STH240N75F3-6 application, or STH240N75F3-6 equivalent, this device is selected for high-current, high-frequency power stages where thermal resistance junction-to-case (0.5 °C/W max) and gate charge (87 nC typ.) directly impact system efficiency and thermal design.

Technical Context

This MOSFET employs STMicroelectronics' STripFET™ III process to simultaneously minimize R_DS(on) and total gate charge (Q_g = 87 nC typ.), enabling fast switching with reduced Miller plateau time and lower switching losses. Its H²PAK-6 package integrates a large copper tab for direct heatsinking and optimized source/drain terminal layout to suppress parasitic inductance.

The device supports unclamped inductive switching with 600 mJ single-pulse avalanche energy (T_j = 25 °C, I_D = 60 A, V_DD = 15 V) and exhibits robust body diode performance: t_rr = 80 ns typ., Q_rr = 180 nC typ., and V_SD = 1.5 V at I_SD = 120 A, making it suitable for synchronous rectification and freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage in high-side or half-bridge configurations without derating
R_DS(on) typ.	2.6 mΩ at V_GS = 10 V, I_D = 90 A - Enables <1.5 W conduction loss at 120 A, reducing heatsink requirements
I_D cont.	180 A at T_C = 25 °C - Supports high-current power stages in server VRMs and industrial inverters
Q_g	87 nC typ. - Low gate drive power demand; compatible with standard 1-A peak gate drivers
R_thj-case	0.5 °C/W max - Allows >500 W dissipation with modest heatsinking (ΔT = 25 °C)
E_AS	600 mJ - Withstands transient inductive energy in motor control and UPS applications
t_r/t_f	70 ns / 15 ns typ. - Enables >500 kHz switching in resonant topologies with controlled dV/dt

Pinout & Package

H²PAK-6 is a surface-mount, low-profile power package with integrated copper drain tab (exposed on bottom), designed for high-current PCB mounting and direct thermal coupling to heatsinks. The package features separate source and gate terminals to minimize common-source inductance.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Power Drain connection	Exposed copper drain pad - primary thermal path and high-current return; must be soldered to large copper area
Pin 1 (G)	Gate input	Isolated gate terminal - routed with short, low-inductance trace to minimize ringing during switching
Pins 2–7 (S)	Source return	Multi-pin source connection - reduces source inductance and improves current sharing across parallel devices

Key Features

Feature	Design Value
STripFET™ III process technology	Simultaneously optimizes R_DS(on) and Q_g - enables higher efficiency than previous-generation 75 V MOSFETs at same die size
Ultra-low R_DS(on) × Q_g figure of merit	227 mΩ·nC - quantifies superior switching-conduction trade-off for hard-switched SMPS
Low-profile H²PAK-6 package	Max height 4.8 mm - fits into space-constrained 1U server power supplies and compact motor controllers
Robust body diode	t_rr = 80 ns, Q_rr = 180 nC - minimizes commutation loss and EMI in synchronous buck and LLC converters

Applications

Server VRM Phase Legs

Industrial Motor Inverters

Use Scenario: High-density 48 V–12 V step-down conversion in AI accelerator racks requiring >400 A per phase.

IC Role / Device Role / Timing Role: High-side and low-side switching element in multiphase buck converter; operates at 300–600 kHz with precise dead-time control.

Use Value: 2.6 mΩ R_DS(on) and 0.5 °C/W R_thj-case enable >95% efficiency at full load while maintaining T_j < 125 °C without forced air.

Use Scenario: 3-phase inverter stage for 5–10 kW servo drives in CNC machinery.

IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM-driven bridge arms; handles 180 A peak motor current with minimal shoot-through risk.

Use Value: Low Q_gd/Q_gs ratio (30/87 nC) ensures clean turn-off and stable operation under high dv/dt conditions near motor windings.

Onboard Charger (OBC) DC-DC Stage

Solar Microinverter Half-Bridge

Use Scenario: Isolated bidirectional DC-DC stage in EV onboard chargers interfacing 400 V battery and 12 V auxiliary systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; conducts 120 A RMS with 50% duty cycle.

Use Value: 600 mJ E_AS withstands transformer leakage inductance spikes during zero-voltage switching transitions.

Use Scenario: High-efficiency 250–400 V DC input stage in residential solar microinverters.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge inverter leg; switches at 50–100 kHz with soft recovery requirements.

Use Value: Body diode t_rr = 80 ns and low Q_rr reduce reverse recovery loss by >30% vs. standard trench MOSFETs, improving full-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ (max), Q_g = 120 nC - higher conduction and switching loss	Designed for lower-frequency (<100 kHz) industrial motor drives; less optimized for high-frequency VRMs	Select when cost sensitivity outweighs efficiency targets and thermal margin is ample
IXFH40N75X3	R_DS(on) = 2.8 mΩ (typ), Q_g = 72 nC - slightly lower gate charge but higher R_DS(on)	Optimized for avalanche ruggedness (E_AS = 1.2 J); used in UPS and welding equipment	Select when unclamped inductive load stress exceeds 600 mJ or ambient temperature exceeds 105 °C

Compared with IRFB4115PBF and IXFH40N75X3, STH240N75F3-6 offers the lowest R_DS(on) × Q_g product (227 mΩ·nC), enabling highest efficiency in high-frequency, high-current applications where thermal headroom is constrained.

Availability

STH240N75F3-6 is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, and onboard charger DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for STH240N75F3-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications including data center power supplies, renewable energy inverters, and electric vehicle subsystems.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS rating is ±20 V, but ST recommends limiting gate drive to +15 V / –5 V for long-term reliability. Operation above +15 V increases gate oxide stress and accelerates threshold voltage drift; below –5 V risks incomplete turn-off due to Miller-induced false triggering in high-dv/dt environments.

Can STH240N75F3-6 be paralleled with identical units without external gate resistors?

No. While matched R_DS(on) and gate charge support current sharing, each device requires individual gate resistors (typically 2.2–4.7 Ω) to dampen oscillation and equalize turn-on/turn-off timing. Layout asymmetry and PCB inductance differences will otherwise cause dynamic current imbalance, especially above 200 kHz.

Is the H²PAK-6 package RoHS-compliant and lead-free?

Yes. The H²PAK-6 package meets RoHS Directive 2011/65/EU and is lead-free, halogen-free, and compliant with ST's ECOPACK®2 environmental standard. The device carries the "ECOPACK2" marking on its top-side laser etch and uses matte tin plating on all terminations.

Does the datasheet specify maximum safe operating area (SOA) for linear-mode operation?

Yes. Figure 2 in the datasheet defines the SOA curve for DC, pulsed, and repetitive operation up to 10 ms. At V_DS = 40 V and T_C = 25 °C, the device supports ≤120 A continuously; at 100 °C case temperature, the limit drops to ~75 A. Linear-mode use requires strict thermal monitoring and derating per the SOA graph.

STH240N75F3-6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-6

STH240N75F3-6 FAQ

1.How can I place an order for STH240N75F3-6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH240N75F3-6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH240N75F3-6 reliable?

The price and inventory of STH240N75F3-6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH240N75F3-6 is usually 5 days.

3.What payment methods are accepted for STH240N75F3-6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH240N75F3-6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH240N75F3-6?

STH240N75F3-6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH240N75F3-6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH240N75F3-6?

For technical support, including STH240N75F3-6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH240N75F3-6 requirements.

6.How does Aetrix verify that STH240N75F3-6 is sourced from the original manufacturer or authorized distributors?

All STH240N75F3-6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH240N75F3-6 meets industry standards.

7.What is the process for return or replacement of STH240N75F3-6?

All STH240N75F3-6 units undergo pre-shipment inspection (PSI). If there is an issue with STH240N75F3-6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH240N75F3-6 part is unused and in its original packaging.

Return procedure for STH240N75F3-6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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