STMicroelectronics STH250N55F3-6

Overview

STH250N55F3-6 from STMicroelectronics is an N-channel 55 V, 2.2 mΩ (typ), 180 A continuous drain current H²PAK-6L Power MOSFET based on STripFET™ III technology. It delivers ultra-low R_DS(on), 100% avalanche-tested ruggedness, and 300 W power dissipation at T_C = 25 °C, targeting high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the STH250N55F3-6 datasheet, STH250N55F3-6 pinout, STH250N55F3-6 application, or STH250N55F3-6 equivalent, key selection criteria include its 2.2 mΩ R_DS(on) at V_GS = 10 V, 720 A pulsed drain capability, 11 V/ns dv/dt rating, and H²PAK-6L thermal performance with 0.5 °C/W R_thj-case.

Technical Context

This device implements a planar STripFET™ III process optimized for low conduction loss and fast switching. Its gate charge profile shows Q_g = 100 nC (V_DD = 44 V, I_D = 120 A), with Q_gd = 26 nC and Q_gs = 30 nC - enabling efficient hard-switching in synchronous rectifiers and half-bridge topologies.

The integrated body diode exhibits t_rr = 60 ns and Q_rr = 0.11 µC under I_SD = 120 A, dI/dt = 100 A/µs, and T_j = 150 °C conditions, supporting snubberless operation in inductive load switching. Safe operating area (SOA) is defined up to 720 A pulsed current with pulse width-dependent derating.

Key Specifications

Pinout & Package

H²PAK-6L is a surface-mount, thermally enhanced package with 6 terminals: three drain pins (D1–D3), one source pin (S), one gate pin (G), and one Kelvin source pin (KS) for accurate gate drive referencing. The exposed drain pad provides low-inductance, high-current path and direct thermal interface to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXFH210N30P3 and IRFP4868PBF, STH250N55F3-6 offers superior power density via H²PAK-6L's Kelvin source and 0.5 °C/W thermal resistance, enabling compact 48 V designs where layout area and thermal management are constrained.

Availability

STH250N55F3-6 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply and long-term production continuity.

Supply support for STH250N55F3-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–60 V systems where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The STH250N55F3-6 has a specified operating junction temperature range of –55 °C to +175 °C. For continuous operation, thermal design must ensure T_j remains ≤175 °C under worst-case ambient and power dissipation conditions, using the 0.5 °C/W R_thj-case and appropriate PCB copper area.

Does this MOSFET require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω, as used in the datasheet test circuit) is recommended to dampen ringing caused by gate loop inductance and prevent unintended turn-on due to dv/dt coupling. The 100 nC total gate charge necessitates careful driver sizing to maintain <100 ns switching transitions.

Is the Kelvin source (KS) pin mandatory for proper operation?

The KS pin is not mandatory for basic switching but is essential for stable, high-accuracy gate drive in high-di/dt applications. It isolates gate drive reference from source inductance-induced voltage drop, preventing false turn-off and oscillation - especially critical in synchronous rectification and high-frequency converters.

Can STH250N55F3-6 be paralleled with identical units?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Figure 11) ensures inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and shared thermal interface. Derate total current by 10–15% to account for layout-induced imbalances and thermal coupling.