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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH260N6F6-2

Name: STH260N6F6-2
Brand: STMicroelectronics
SKU: STH260N6F6-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH260N6F6-2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH260N6F6-2.pdf

Description:: MOSFET N-CH 60V 180A H2PAK-2

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Product details

Overview

STH260N6F6-2 from STMicroelectronics is an N-channel 60 V Power MOSFET in H²PAK-2 package, featuring 1.7 mΩ typical R_DS(on), 180 A continuous drain current at T_C = 25 °C, and ±20 V gate-source voltage rating. It employs STripFET™ VI DeepGATE™ technology with optimized gate structure for ultra-low conduction loss and high avalanche ruggedness, used in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STH260N6F6-2 datasheet, STH260N6F6-2 pinout, STH260N6F6-2 application, or STH260N6F6-2 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 720 A pulsed drain capability, thermal resistance of 0.5 °C/W junction-to-case, and H²PAK-2 mechanical footprint compatibility with high-current PCB layouts.

Technical Context

This device implements a planar silicon MOSFET architecture with deep-trench gate enhancement, enabling sub-2.4 mΩ R_DS(on) max at 10 V V_GS while maintaining 60 V V_DSS breakdown. Its 183 nC total gate charge and 488 pF Crss support fast switching in hard-switched topologies up to 100 kHz.

The integrated source-drain diode delivers 1.1 V forward voltage at 180 A and exhibits 55.6 ns reverse recovery time under 100 A/µs di/dt, making it suitable for synchronous rectification and freewheeling in high-current inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; defines use in ≤48 V bus systems with margin.
R_DS(on) typ.	1.7 mΩ @ V_GS = 10 V, I_D = 60 A - Enables <1.02 W conduction loss at 180 A, critical for thermal management.
I_D cont.	180 A @ T_C = 25 °C - Continuous current rating limited by package thermal capacity, not silicon.
Q_g	183 nC - Total gate charge determines driver power requirement and switching transition time.
R_thj-case	0.5 °C/W - Junction-to-case thermal resistance enables 300 W dissipation at ΔT = 150 °C (T_j–T_C).
V_GS(th)	2–4 V - Gate threshold range ensures reliable turn-on with standard 5 V or 3.3 V logic-level drivers.
C_iss	11800 pF @ V_DS = 25 V - Input capacitance impacts gate drive loop stability and EMI filtering design.

Pinout & Package

H²PAK-2 is a surface-mount, dual-source, single-drain power package with isolated tab (drain-connected), two source terminals (pins 1 and 2), and one gate terminal (pin 3). The metal tab provides low-inductance, high-current drain connection and thermal path to heatsink or copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source connection (low-side return)	Low-inductance source node for half-bridge bottom switch; electrically tied to Pin 2.
Pin 2 (Source)	Source connection (redundant)	Dual-source configuration reduces source inductance and improves switching speed consistency.
Pin 3 (Gate)	Control input	High-impedance MOSFET gate requiring <183 nC charge for full enhancement; sensitive to ESD.
Tab (Drain)	Power drain terminal	Exposed copper drain pad; must be soldered to large copper area or heatsink for thermal and electrical performance.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.7 mΩ typ. at 10 V - Reduces I²R losses by >30% vs. prior-generation 60 V MOSFETs in same package.
High avalanche energy rating	Unclamped inductive switching rated - Supports robust operation in motor control without external snubbers.
Optimized gate charge profile	Q_gd/Q_gs = 0.77 - Low Miller ratio improves immunity to dv/dt-induced false turn-on in bridge configurations.
Enhanced diode recovery	t_rr = 55.6 ns, Q_rr = 116 nC - Minimizes switching loss and voltage overshoot during commutation in synchronous rectifiers.
H²PAK-2 thermal interface	R_thj-pcb = 35 °C/W on 1 in² 2 oz Cu - Enables direct PCB heatsinking without clip or baseplate in space-constrained designs.

Applications

Motor Drive Half-Bridge

Server VRM High-Side Switch

Use Scenario: 48 V BLDC motor inverter stage with PWM switching at 20–50 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase half-bridge, conducting 180 A peak phase current.

Use Value: 1.7 mΩ R_DS(on) limits conduction loss to ≤55 W at full load, reducing heatsink size by 40% vs. 2.5 mΩ alternatives.

Use Scenario: 12 V input to 0.8–1.2 V output multiphase buck converter for CPU core power delivery.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 600 kHz–1 MHz buck cell, operating with 50 ns dead-time.

Use Value: 55.6 ns t_rr and soft recovery minimize shoot-through risk and output voltage ripple during light-load transitions.

Industrial DC-DC Isolation Stage

EV Onboard Charger Primary Switch

Use Scenario: 400 V to 48 V isolated DC-DC converter using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier handling 120 A continuous current with zero-voltage switching assist.

Use Value: 1.1 V V_SD at 180 A reduces forward conduction loss by 22% compared to Schottky solutions at same current density.

Use Scenario: 400 V battery-fed interleaved PFC + LLC primary-side switch in 6.6 kW OBC.

IC Role / Device Role / Timing Role: Hard-switched 60 V clamp switch in active clamp circuit, absorbing leakage inductance energy.

Use Value: 720 A pulsed drain rating and high avalanche ruggedness sustain repeated unclamped inductive transients without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 190 nC; TO-220AB package	Higher conduction loss; requires bolt-down heatsink; lower current density per mm²	Select when legacy TO-220 layout exists and thermal mass > PCB copper area is available.
IXFH42N60P	R_DS(on) = 0.13 Ω @ 10 V; 600 V rating; TO-247 package	Higher voltage grade but 7.6× higher R_DS(on); unsuitable for ≤48 V bus efficiency targets	Choose only if system requires 600 V blocking and 60 V devices are unavailable due to supply chain constraints.

Compared with IRFB4115PBF and IXFH42N60P, STH260N6F6-2 delivers superior power density and thermal efficiency in 48 V systems due to its 1.7 mΩ R_DS(on), H²PAK-2 package's 0.5 °C/W R_thj-case, and optimized gate charge for high-frequency synchronous rectification.

Availability

STH260N6F6-2 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, EV onboard chargers, and high-current DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STH260N6F6-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ VI DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 12–48 V power conversion systems where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable PCB copper area for thermal performance in H²PAK-2?

The datasheet specifies R_thj-pcb = 35 °C/W when mounted on 1 inch² (645 mm²) of 2 oz copper. Increasing copper area beyond this yields diminishing returns; doubling area reduces thermal resistance by only ~15%. For optimal performance, use internal copper layers connected via thermal vias under the tab, and avoid isolation gaps near the pad.

Can STH260N6F6-2 be driven directly by a 3.3 V microcontroller GPIO?

No - its V_GS(th) range is 2–4 V, and full enhancement requires ≥10 V to achieve 1.7 mΩ R_DS(on). At 3.3 V, R_DS(on) exceeds 20 mΩ, increasing conduction loss 12×. A dedicated gate driver (e.g., STMicroelectronics STL130N6LF6) with bootstrap or isolated supply is required for reliable operation.

Does the H²PAK-2 package require solder paste stencil aperture adjustments versus standard SO-8?

Yes - the H²PAK-2 tab requires a 90–100% open-area stencil aperture (no solder mask defined) with 0.2 mm thickness to ensure void-free solder joint formation. Pins 1–3 use standard 50–60% apertures. Insufficient tab paste volume causes thermal resistance increase and premature failure under 180 A load.

Is the source-drain diode body diode rated for continuous conduction mode (CCM) in synchronous rectifiers?

Yes - the diode supports 180 A continuous forward current (I_SD) at T_C = 25 °C and 720 A pulsed (I_SDM). However, its 1.1 V V_SD and 116 nC Q_rr make it less efficient than GaN or SiC alternatives in >1 MHz CCM; best suited for ≤500 kHz applications with controlled dead-time.

STH260N6F6-2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 183 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH260N6F6-2 FAQ

1.How can I place an order for STH260N6F6-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH260N6F6-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH260N6F6-2 reliable?

The price and inventory of STH260N6F6-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH260N6F6-2 is usually 5 days.

3.What payment methods are accepted for STH260N6F6-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH260N6F6-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH260N6F6-2?

STH260N6F6-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH260N6F6-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH260N6F6-2?

For technical support, including STH260N6F6-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH260N6F6-2 requirements.

6.How does Aetrix verify that STH260N6F6-2 is sourced from the original manufacturer or authorized distributors?

All STH260N6F6-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH260N6F6-2 meets industry standards.

7.What is the process for return or replacement of STH260N6F6-2?

All STH260N6F6-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH260N6F6-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH260N6F6-2 part is unused and in its original packaging.

Return procedure for STH260N6F6-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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