STMicroelectronics STH270N4F3-6

Overview

STH270N4F3-6 from STMicroelectronics is an N-channel 40 V, 1.40 mΩ R_DS(on), 180 A continuous drain current H2PAK-6L Power MOSFET based on STripFET™ III technology. It delivers ultra-low conduction loss and high-current switching capability in automotive-grade packaging, optimized for high-efficiency DC-DC conversion and motor control in 12 V/24 V vehicle systems.

For engineers reviewing the STH270N4F3-6 datasheet, STH270N4F3-6 pinout, STH270N4F3-6 application, or STH270N4F3-6 equivalent, key selection criteria include its 0.5 °C/W junction-to-case thermal resistance, 110 nC total gate charge, 720 A pulsed drain current rating, and H2PAK-6L low-inductance package layout for high-frequency power stage design.

Technical Context

This MOSFET employs STripFET™ III trench-gate process to minimize R_DS(on) while maintaining robust avalanche capability (1000 mJ single-pulse EAS) and fast switching performance (t_d(on) = 25 ns, t_f = 45 ns). Its gate threshold voltage (2–4 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers.

The device features a monolithic source-drain diode with 1.5 V forward voltage at 180 A and 70 ns reverse recovery time under harsh conditions (T_j = 150 °C, di/dt = 100 A/µs), enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Pinout & Package

H2PAK-6L is a surface-mount, low-profile power package with integrated copper clip and exposed drain tab for direct PCB thermal coupling. It features six terminals: three parallel source pins, two gate pins (G1/G2), and one large-area drain tab (TAB) for high-current return path and heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP026N04LG and NTMFS4C09NT1G, STH270N4F3-6 offers superior thermal performance (0.5 °C/W vs. ≥1.2 °C/W), higher pulsed current headroom (720 A), and guaranteed avalanche ruggedness-making it the only choice for safety-critical automotive power stages requiring long-term reliability under stress.

Availability

STH270N4F3-6 is available at Aetrix Electronics and suitable for automotive engine control units, 48 V mild hybrid DC-DC converters, electric power steering inverters, and commercial vehicle HVAC blower drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STH270N4F3-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management technologies with vertical manufacturing capabilities and AEC-Q101 qualified product lines.

This device belongs to ST's STripFET™ III Power MOSFET family, engineered specifically for high-current, high-reliability automotive power conversion where low R_DS(on), fast switching, and robust avalanche performance are mandatory.

FAQ

What is the maximum safe operating temperature for STH270N4F3-6?

The STH270N4F3-6 has a maximum operating junction temperature of 175 °C and a storage temperature range of –55 to +175 °C. Its R_th(j-c) = 0.5 °C/W enables operation at full 180 A current with case temperature ≤100 °C when mounted on ≥1 inch² of 2 oz copper, per datasheet Figure 2 (SOA curve).

Does STH270N4F3-6 require a gate resistor for automotive applications?

Yes-a gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt during switching, especially in noisy automotive environments. The dual gate pins (G1/G2) support Kelvin connection to isolate gate drive loop from high-current source paths, minimizing Miller-induced turn-on risk.

Can STH270N4F3-6 replace older STripFET II devices in existing designs?

Yes-STH270N4F3-6 is a direct drop-in replacement for STH220N4F3 and STH180N4F3 in H2PAK-6L footprint, offering lower R_DS(on) (1.40 mΩ vs. 1.75 mΩ), improved E_AS, and tighter V_GS(th) distribution, with identical pinout and thermal interface requirements.

Is the body diode in STH270N4F3-6 suitable for synchronous rectification?

Yes-the integrated source-drain diode has a forward voltage of 1.5 V at 180 A and 70 ns reverse recovery time at T_j = 150 °C, making it suitable for synchronous rectification in medium-frequency DC-DC converters where external Schottky diodes would add cost and board area.