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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH270N8F7-6

Name: STH270N8F7-6
Brand: STMicroelectronics
SKU: STH270N8F7-6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH270N8F7-6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: STH270N8F7-6.pdf

Description:: MOSFET N-CH 80V 180A H2PAK

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Product details

Overview

STH270N8F7-6 from STMicroelectronics is an N-channel 80 V, 180 A Power MOSFET in H²PAK-6 package utilizing STripFET F7 trench gate technology. It delivers a typical R_DS(on) of 0.0017 Ω at V_GS = 10 V and ID = 90 A, with 193 nC total gate charge and 236 pF Crss, enabling high-efficiency switching in high-current DC-DC converters.

For engineers reviewing the STH270N8F7-6 datasheet, STH270N8F7-6 pinout, STH270N8F7-6 application, or STH270N8F7-6 equivalent, key selection criteria include its low Crss/Ciss ratio for EMI immunity, 1.16 J single-pulse avalanche energy, 0.48 °C/W junction-to-case thermal resistance, and suitability for synchronous rectification in server power supplies.

Technical Context

This device implements an enhanced trench-gate STripFET F7 structure that simultaneously reduces on-resistance and internal capacitances-specifically achieving 13600 pF Ciss and only 236 pF Crss at V_DS = 50 V-thereby minimizing switching losses and improving EMI performance in hard-switched topologies.

Its 180 A continuous drain current rating is sustained at T_C = 25 °C and T_C = 100 °C, supported by high avalanche ruggedness (E_AS = 1.16 J) and robust safe operating area up to 100 µs pulse width at 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input bus applications with 20 % margin
R_DS(on) max	0.0021 Ω - Confirmed worst-case on-resistance at V_GS = 10 V, ID = 90 A, defining conduction loss in high-current paths
I_D cont	180 A - Continuous drain current rating at both 25 °C and 100 °C case temperature, enabling derating-free thermal design in forced-air systems
Q_g	193 nC - Total gate charge determining driver strength requirement and turn-on energy loss
C_rss	236 pF - Reverse transfer capacitance directly governing Miller effect and dV/dt immunity in high-side switching
E_AS	1.16 J - Single-pulse avalanche energy at I_D = 65 A, V_DD = 50 V, T_j = 25 °C, supporting unclamped inductive switching reliability
R_thJC	0.48 °C/W - Junction-to-case thermal resistance enabling 315 W power dissipation at ΔT = 152 °C, critical for heatsink sizing

Pinout & Package

H²PAK-6 is a surface-mount, isolated-drain, 6-terminal power package with integrated thermal pad. Its layout supports high-current source return paths and low-inductance gate drive routing.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Exposed metal tab electrically connected to drain; primary thermal path to heatsink
G	Gate	Control terminal requiring ≤ ±20 V drive; low 193 nC Q_g enables efficient driver selection
S1–S4	Source	Four dedicated source terminals minimize source inductance and improve current sharing in paralleled configurations

Key Features

Feature	Design Value
Lowest R_DS(on) in class	0.0017 Ω typ. at 90 A - Reduces conduction loss below 1.4 W at 180 A, critical for >98 % efficiency targets
Low Crss/Ciss ratio	236 pF / 13600 pF = 0.017 - Limits Miller-induced shoot-through risk and improves dV/dt noise immunity
High avalanche ruggedness	1.16 J single-pulse E_AS - Enables reliable operation under transient overvoltage without external clamping
Enhanced FoM (R_DS(on) × Q_g)	0.0021 Ω × 193 nC = 405 Ω·nC - Benchmark figure-of-merit for high-frequency, high-current switching
Extended T_j range	−55 to +175 °C - Supports operation in automotive under-hood and industrial motor drive environments

Applications

Server VRM Phase Legs

Industrial Motor Drive Inverters

Use Scenario: High-density 48 V input buck converters delivering up to 300 A per phase in AI accelerator racks.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side/low-side configuration, switching at 300–500 kHz.

Use Value: 0.0021 Ω R_DS(on) limits conduction loss to <1.5 W at full load, while 193 nC Q_g allows use of compact gate drivers.

Use Scenario: 3-phase inverter stage for 7.5 kW PMSM drives in CNC machinery with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch handling 180 A peak current with 100 µs short-circuit capability.

Use Value: 1.16 J E_AS withstands IGBT desaturation events; 0.48 °C/W R_thJC enables direct heatsink mounting without thermal interface pads.

Telecom Rectifier Modules

EV Onboard Charger (OBC) PFC Stages

Use Scenario: 3.3 kW front-end AC-DC rectifiers using interleaved totem-pole PFC with SiC diode replacement.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch in continuous conduction mode (CCM) PFC.

Use Value: 236 pF Crss minimizes Miller plateau duration, reducing dead-time sensitivity and improving THD performance.

Use Scenario: Bidirectional OBC with dual active bridge topology requiring reverse-conducting capability in 6.6 kW units.

IC Role / Device Role / Timing Role: High-current synchronous rectifier in secondary-side LLC resonant converter.

Use Value: Integrated body diode with 78 ns t_rr and 182 nC Q_rr enables zero-voltage switching without external SiC diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP270N8F7	TO-220 package; R_DS(on) max = 0.0025 Ω; R_thJC = 0.48 °C/W; same die, higher thermal resistance to ambient	Through-hole assembly; lower power density; suited for prototyping and lower-volume industrial controls	Select when manual soldering, legacy footprint compatibility, or lower gate charge driver cost outweighs surface-mount density benefits
IPB017N08N5	Infineon OptiMOS 5; R_DS(on) max = 0.0017 Ω; Q_g = 165 nC; Crss = 210 pF; different gate threshold (2.2–3.3 V)	Higher dV/dt immunity; tighter V_GS(th) distribution; requires gate driver with lower UVLO threshold	Select when optimizing for lowest possible switching loss in 1 MHz+ multi-phase VRMs with advanced gate drivers

Compared with STH270N8F7-6, STP270N8F7 trades surface-mount density and thermal performance for through-hole manufacturability, while IPB017N08N5 offers marginally better switching metrics but demands tighter gate drive control and lacks ST's documented 1.16 J avalanche rating.

Availability

STH270N8F7-6 is available at Aetrix Electronics and suitable for server VRM phase legs, industrial motor drive inverters, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply across high-volume production ramps.

Supply support for STH270N8F7-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to ST's STripFET F7 Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in datacenter power supplies, industrial motor drives, and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for STH270N8F7-6 at 100 °C case temperature?

The datasheet specifies ID = 180 A continuous at both TC = 25 °C and TC = 100 °C, confirmed in Table 1. This reflects package-limited current handling rather than silicon limitation, enabled by the H²PAK-6's low RthJC of 0.48 °C/W and four-source-terminal layout.

Does STH270N8F7-6 have an integrated body diode, and what are its reverse recovery characteristics?

Yes, it features a monolithic source-drain body diode rated for ISD = 180 A continuous and ISDM = 720 A pulsed. At TJ = 150 °C, trr = 78 ns and Qrr = 182 nC under ISD = 180 A, di/dt = 100 A/µs, VDD = 64 V conditions-enabling use in synchronous rectification without external diodes.

How does the Crss value of 236 pF impact gate drive design for STH270N8F7-6?

A Crss of 236 pF at VDS = 50 V results in a low Crss/Ciss ratio of 0.017, which suppresses Miller-induced voltage spikes during high dV/dt switching. This allows use of standard 1–2 A gate drivers without active Miller clamping, reducing system BOM count and layout complexity in high-frequency PFC designs.

Is STH270N8F7-6 qualified for automotive applications per AEC-Q101?

No-STH270N8F7-6 is not AEC-Q101 qualified. It is specified for industrial and computing applications with Tj = −55 to +175 °C, but lacks the extended reliability testing, failure analysis reporting, and traceability required for automotive qualification. For automotive use, ST recommends the AEC-Q101 qualified STL220N6F7.

STH270N8F7-6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 193 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 315W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK

STH270N8F7-6 FAQ

1.How can I place an order for STH270N8F7-6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH270N8F7-6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH270N8F7-6 reliable?

The price and inventory of STH270N8F7-6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH270N8F7-6 is usually 5 days.

3.What payment methods are accepted for STH270N8F7-6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH270N8F7-6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH270N8F7-6?

STH270N8F7-6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH270N8F7-6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH270N8F7-6?

For technical support, including STH270N8F7-6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH270N8F7-6 requirements.

6.How does Aetrix verify that STH270N8F7-6 is sourced from the original manufacturer or authorized distributors?

All STH270N8F7-6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH270N8F7-6 meets industry standards.

7.What is the process for return or replacement of STH270N8F7-6?

All STH270N8F7-6 units undergo pre-shipment inspection (PSI). If there is an issue with STH270N8F7-6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH270N8F7-6 part is unused and in its original packaging.

Return procedure for STH270N8F7-6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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