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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH275N8F7-6AG

Name: STH275N8F7-6AG
Brand: STMicroelectronics
SKU: STH275N8F7-6AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH275N8F7-6AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: STH275N8F7-6AG.pdf

Description:: MOSFET N-CH 80V 180A H2PAK-6

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Product details

Overview

STH275N8F7-6AG from STMicroelectronics is an automotive-grade N-channel 80 V, 1.7 mΩ typ. R_DS(on), 180 A continuous drain current Power MOSFET in H²PAK-6 package, utilizing STripFET™ F7 trench technology for ultra-low conduction loss and fast switching. It delivers 0.775 J single-pulse avalanche energy and supports high-current motor control and DC-DC conversion in engine management systems.

For engineers reviewing the STH275N8F7-6AG datasheet, STH275N8F7-6AG pinout, STH275N8F7-6AG application, or STH275N8F7-6AG equivalent, key selection criteria include its AEC-Q101 qualification, 0.48 °C/W junction-to-case thermal resistance, low Crss/Ciss ratio for EMI immunity, and H²PAK-6 thermal pad layout compatibility with high-power PCB heatsinking.

Technical Context

This device implements an enhanced trench-gate STripFET™ F7 structure that reduces both R_DS(on) (1.7 mΩ typ. at V_GS = 10 V) and gate charge (Q_g = 193 nC), enabling high-efficiency synchronous rectification and PWM motor drive. Its Crss/Ciss ratio of ~1.7% (236 pF / 13600 pF) suppresses Miller-induced turn-on during high-dV/dt switching.

The H²PAK-6 package integrates a large exposed thermal pad and six source terminals to minimize parasitic inductance and improve current sharing. With 720 A pulsed drain capability and 315 W total dissipation at T_C = 25 °C, it operates reliably across –55 °C to 175 °C junction temperature range under automotive transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V automotive systems with 20% margin against load dump transients
R_DS(on) typ.	1.7 mΩ - Enables <1.5 W conduction loss at 90 A, reducing heatsink requirements
I_D cont.	180 A - Rated for continuous operation at T_C = 25 °C and 100 °C, limited by package
E_AS	0.775 J - Withstands unclamped inductive switching events in motor phase-legs without failure
Q_g	193 nC - Optimized for gate drivers delivering ≥2 A peak to achieve <100 ns turn-on delay
R_thj-case	0.48 °C/W - Enables direct mounting to cold plates or chassis for >200 W thermal handling
C_rss/C_iss	1.7% - Low reverse transfer capacitance improves noise immunity in high-frequency inverters

Pinout & Package

H²PAK-6 is a surface-mount power package with six parallel source terminals (S1–S6), one drain terminal (D), and one gate terminal (G), featuring an oversized copper thermal pad on the bottom for PCB-level heat extraction. The package complies with AEC-Q101 and ECOPACK® environmental standards.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–10 V logic-level drive; requires 193 nC total charge for full enhancement
D	Drain connection	High-side or low-side switch node; rated for 80 V blocking and 720 A pulsed current
S1–S6	Source return paths	Six parallel terminals reduce source inductance and distribute 180 A current evenly across PCB traces
Thermal pad	Junction-to-PCB thermal path	Exposed copper area directly soldered to inner-layer ground/power planes for 0.48 °C/W R_thj-case

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
Low R_DS(on) × Q_g FoM	328 mΩ·nC - Balances conduction and switching losses for 100–200 kHz DC-DC converters
High avalanche ruggedness	0.775 J E_AS at T_j = 25 °C - Survives repetitive inductive turn-off without parameter shift
Low Crss/Ciss ratio	1.7% - Reduces risk of false turn-on during high dV/dt commutation in half-bridge topologies
H²PAK-6 thermal architecture	0.48 °C/W R_thj-case - Supports >200 W continuous power dissipation with standard 2 oz Cu FR-4 PCB

Applications

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driving 3-phase EPS motor with 150 A peak phase current.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg, operating at 10–20 kHz PWM.

Use Value: 1.7 mΩ R_DS(on) limits I²R loss to <4 W per device at 120 A, enabling compact heatsink design.

Use Scenario: Synchronous rectifier in 3.3 kW bi-directional buck-boost converter between 12 V and 48 V rails.

IC Role / Device Role / Timing Role: High-efficiency secondary-side switch with 193 nC Q_g compatible with 2 A gate drivers.

Use Value: 0.48 °C/W thermal resistance allows direct PCB copper plane cooling, eliminating discrete heatsinks.

Engine Start-Stop System

Onboard Charger (OBC) Primary Switch

Use Scenario: High-side main switch controlling battery disconnect during cranking and regenerative braking.

IC Role / Device Role / Timing Role: 80 V-rated power switch handling 180 A continuous load with 720 A surge capability.

Use Value: 0.775 J E_AS ensures robustness against inductive kickback from solenoid and relay coils.

Use Scenario: Primary-side hard-switched MOSFET in 6.6 kW OBC AC/DC stage operating at 65 kHz.

IC Role / Device Role / Timing Role: Fast-turning, low-Coss switch minimizing switching loss in LLC resonant topology.

Use Value: C_oss = 2050 pF and C_rss = 236 pF enable stable zero-voltage switching up to 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N08N	R_DS(on) = 2.6 mΩ (typ.), Q_g = 160 nC, TO-220FP package	Higher conduction loss; lacks AEC-Q101 qualification and H²PAK-6 thermal performance	Preferred where cost sensitivity outweighs thermal density and automotive compliance
ON Semiconductor NTMFS5C673NL	R_DS(on) = 1.85 mΩ (typ.), Q_g = 175 nC, SO-8FL package	Lower current rating (120 A), no avalanche rating published, smaller thermal pad	Selected for space-constrained 48 V auxiliary supplies where 180 A is not required

Compared with IPP026N08N and NTMFS5C673NL, STH275N8F7-6AG offers the lowest R_DS(on) (1.7 mΩ), highest pulsed current (720 A), and only AEC-Q101-qualified option with H²PAK-6's 0.48 °C/W thermal resistance-making it optimal for high-reliability automotive traction and energy conversion.

Availability

STH275N8F7-6AG is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC conversion, and onboard charger applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for STH275N8F7-6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STripFET™ F7 is ST's seventh-generation trench MOSFET platform targeting high-current, high-efficiency automotive power conversion-specifically engineered for engine control units, EPS, and 48 V system switches where low R_DS(on), avalanche ruggedness, and thermal density are critical.

FAQ

What is the maximum allowable gate-source voltage for STH275N8F7-6AG?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially in high-noise automotive environments.

Does STH275N8F7-6AG have integrated body diode recovery characteristics suitable for synchronous rectification?

Yes. It features a fast, soft-recovery body diode with t_rr = 78 ns and Q_rr = 182 nC at T_j = 150 °C, enabling efficient synchronous rectification in DC-DC converters. The low I_RRM (4.7 A) and controlled di/dt response reduce switching node ringing and EMI in high-frequency topologies.

How does the H²PAK-6 package differ mechanically from H²PAK-2 for this part number?

H²PAK-6 adds five extra source terminals (S2–S6) versus H²PAK-2's single source pin, reducing source loop inductance by >60%. Its footprint has wider terminal spacing (e1 = 4.88–5.28 mm, e2 = 7.42–7.82 mm) and optimized thermal pad geometry to support higher current density and lower R_thj-pcb on multilayer boards.

Is STH275N8F7-6AG suitable for use in a high-side configuration with bootstrap gate driving?

Yes. Its V_DS = 80 V rating and V_GS = ±20 V tolerance support bootstrap-based high-side drive in half-bridge configurations up to 60 V bus voltage. Designers must ensure gate driver output swing exceeds V_GS(th) (2.5–4.5 V) and provides ≥2 A peak current to charge 193 nC Q_g within required switching times.

STH275N8F7-6AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ F7

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 193 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 315W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-6

STH275N8F7-6AG FAQ

1.How can I place an order for STH275N8F7-6AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STH275N8F7-6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH275N8F7-6AG reliable?

The price and inventory of STH275N8F7-6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH275N8F7-6AG is usually 5 days.

3.What payment methods are accepted for STH275N8F7-6AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH275N8F7-6AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH275N8F7-6AG?

STH275N8F7-6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH275N8F7-6AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH275N8F7-6AG?

For technical support, including STH275N8F7-6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH275N8F7-6AG requirements.

6.How does Aetrix verify that STH275N8F7-6AG is sourced from the original manufacturer or authorized distributors?

All STH275N8F7-6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH275N8F7-6AG meets industry standards.

7.What is the process for return or replacement of STH275N8F7-6AG?

All STH275N8F7-6AG units undergo pre-shipment inspection (PSI). If there is an issue with STH275N8F7-6AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH275N8F7-6AG part is unused and in its original packaging.

Return procedure for STH275N8F7-6AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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