STMicroelectronics STH300NH02L-6

Overview

STH300NH02L-6 from STMicroelectronics is an automotive-grade N-channel 24 V Power MOSFET using STripFET™ III technology, housed in an H2PAK-6 package. It delivers 0.95 mΩ typ. R_DS(on), 180 A continuous drain current at T_C = 25 °C, and 1.6 J single-pulse avalanche energy - optimized for high-current, low-loss switching in 12 V/24 V automotive power distribution systems.

For engineers reviewing the STH300NH02L-6 datasheet, STH300NH02L-6 pinout, STH300NH02L-6 application, or STH300NH02L-6 equivalent, key selection criteria include its AEC-Q101 qualification, ultra-low on-resistance at 10 V gate drive, thermal resistance of 0.5 °C/W (j-case), 7050 pF input capacitance, and suitability for high-duty-cycle load switching with fast turn-off (138 ns td(off)).

Technical Context

This MOSFET employs ST's STripFET™ III process to minimize both R_DS(on) and gate charge (Q_g = 109 nC), enabling high-efficiency synchronous rectification and PWM-controlled motor drives. Its H2PAK-6 package integrates a large copper tab for direct heatsinking and achieves very low parasitic inductance - critical for minimizing voltage overshoot during high-di/dt switching.

The device supports robust unclamped inductive switching (E_AS = 1.6 J) and features a fast source-drain diode with t_rr = 65 ns and Q_rr = 90 nC at T_j = 150 °C, making it suitable for freewheeling paths in DC-DC converters and solenoid drivers where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

H2PAK-6 is a surface-mount, low-profile power package with a single large exposed copper drain tab (Pin 1) and six solderable terminals: three source pins (Pins 2, 4, 6), one gate pin (Pin 3), and two auxiliary source/gate sense pins (Pins 5, 7). The package enables PCB-level thermal management via the bottom tab and minimizes loop inductance through short internal interconnects.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with IPP020N04N and NTMFS5C673NL, STH300NH02L-6 uniquely balances ultra-low R_DS(on), 180 A capability, and AEC-Q101 compliance in a thermally optimized H2PAK-6 package - making it the only option among the three capable of continuous 180 A operation in automotive underhood environments without derating.

Availability

STH300NH02L-6 is available at Aetrix Electronics and suitable for automotive body control modules, 24 V DC-DC converters, and electric power steering motor drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for STH300NH02L-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ automotive power MOSFET product line, engineered specifically for high-current, high-reliability switching in 12 V/24 V vehicle electrical architectures - emphasizing low R_DS(on), robust avalanche capability, and AEC-Q101 qualification.

FAQ

Is STH300NH02L-6 suitable for high-side switching with 12 V gate drive?

Yes - its gate threshold voltage (V_GS(th)) is 1 V min., and it fully enhances at V_GS = 10 V, delivering 0.95 mΩ R_DS(on). For high-side use, a dedicated bootstrap or isolated gate driver (e.g., STGAP2SICSN) is required to ensure reliable 10 V gate-source bias referenced to the switching node.

What is the maximum allowable PCB copper area for thermal performance?

ST recommends a minimum 1 inch² (645 mm²) of 2 oz copper on the primary side connected to the H2PAK-6 tab for optimal R_thj-pcb = 35 °C/W. Larger copper areas further reduce thermal resistance, but diminishing returns set in beyond 2 inch² unless using internal layers or thermal vias.

Does STH300NH02L-6 require external gate resistors for stability?

Yes - a series gate resistor (typically 4.7 Ω, as used in the datasheet switching test circuit) is recommended to dampen gate oscillation and control dV/dt during turn-on/turn-off. Lower values increase switching speed but risk ringing; higher values reduce EMI but increase switching losses.

Can this MOSFET be paralleled for >180 A applications?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Figure 11) enables inherent current sharing. Use Kelvin source and gate connections (Pins 5 and 7), matched gate drive paths, and symmetrical PCB layout to achieve balanced current distribution across up to four paralleled units.