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STMicroelectronics STH30N65DM6-7AG
- Part No.:
- STH30N65DM6-7AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Datasheet:
-
STH30N65DM6-7AG.pdf
- Description:
- AUTOMOTIVE-GRADE N-CHANNEL 650 V
- Quantity:
- Payment:
- Shipping:
Inventory:135
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Product details
Overview
STH30N65DM6-7AG from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V Power MOSFET in H²PAK-7 package, featuring 102 mΩ typ. RDS(on), 28 A continuous drain current at TC = 25 °C, and fast-recovery body diode with 126 ns trr (TJ = 25 °C). It enables high-efficiency ZVS phase-shift converters and hard-switched bridge topologies in automotive and industrial power supplies.
For engineers reviewing the STH30N65DM6-7AG datasheet, STH30N65DM6-7AG pinout, STH30N65DM6-7AG application, or STH30N65DM6-7AG equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), Qrr (0.63 µC), gate charge (46 nC), thermal resistance (RthJC = 0.56 °C/W), and avalanche energy rating (EAS = 600 mJ).
Technical Context
This MDmesh DM6 device uses a superjunction structure optimized for low Qrr and high dv/dt immunity, achieving 339 pF Coss,eq at VDS = 520 V and Zener-protected gate oxide. Its fast-recovery body diode eliminates need for external anti-parallel diodes in resonant LLC and phase-shift full-bridge designs.
The H²PAK-7 package integrates a thermally enhanced drain tab with seven terminals: one gate, one driver source, one power source, and four parallel source pins - enabling low-inductance, high-current source return paths critical for minimizing switching losses and EMI in >1 kW systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports 400 V DC bus operation with ≥30% voltage margin for transient overvoltage in industrial and automotive on-board chargers. |
| RDS(on) max | 115 mΩ - ensures ≤3.2 W conduction loss at 28 A, enabling compact heatsink design in space-constrained 3–5 kW PFC stages. |
| Qg | 46 nC - reduces gate drive power requirement and allows use of lower-power isolated gate drivers (e.g., Si823x) without boost circuitry. |
| trr | 126 ns (TJ = 25 °C) - minimizes reverse recovery tail current, reducing turn-off losses and snubber stress in hard-switched topologies. |
| dv/dt ruggedness | 100 V/ns - prevents spurious turn-on during high-slew-rate commutation in motor drives and solar inverters with long cable runs. |
| EAS | 600 mJ - provides robust unclamped inductive switching capability, eliminating need for external clamping circuits in flyback or forward converters. |
| RthJC | 0.56 °C/W - enables 223 W power dissipation at TC = 25 °C, supporting high-power density designs with direct heatsink mounting. |
Pinout & Package
H²PAK-7 is a surface-mount, thermally optimized power package with exposed copper drain tab (TAB) and seven signal terminals. The package features dual-source configuration (driver source + power source) to separate control and power return paths, reducing gate loop inductance and improving switching stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB | Drain | Primary heat transfer path to heatsink; electrically connected to drain; requires insulated mounting in non-isolated topologies. |
| 1 | Gate | High-impedance control input; connects to gate driver output via low-inductance trace; sensitive to ringing due to low Ciss (2000 pF). |
| 2 | Driver Source | Reference node for gate driver IC; isolates gate loop from high di/dt power return, suppressing Miller-induced false turn-on. |
| 3–7 | Power Source | Five parallel source terminals (pins 3, 4, 5, 6, 7); collectively carry full 28 A load current; minimize source inductance and voltage bounce. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood applications including OBCs and DC-DC converters operating from −40 °C to 150 °C junction temperature. |
| Zener-protected gate | Integrated gate oxide protection withstands ±25 V transient gate-source voltage, eliminating need for external Zener clamp in noisy environments. |
| 100% avalanche tested | Each unit undergoes single-pulse unclamped inductive switching test at IAR = 4 A and EAS = 600 mJ, ensuring production-level ruggedness. |
| Low Coss,eq | 339 pF across 0–520 V range - reduces capacitive turn-off loss and improves light-load efficiency in resonant converters. |
| Extremely high dv/dt ruggedness | 100 V/ns rating verified per JEDEC JESD24-11 - enables reliable operation in high-frequency, high-voltage switching nodes with minimal layout sensitivity. |
Applications
| On-Board Charger (OBC) | Industrial AC-DC Power Supply |
|---|---|
|
Use Scenario: Bidirectional 6.6 kW OBC using phase-shift full-bridge topology with 400 V battery interface. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 28 A RMS current and 650 V blocking; operates at 100–200 kHz with ZVS. Use Value: Low Qrr (0.63 µC) and fast trr (126 ns) reduce dead-time losses and improve ZVS window margin across full load range. |
Use Scenario: Three-phase PFC front-end in 10 kW industrial UPS with active clamp circuitry. IC Role / Device Role / Timing Role: Boost switch in interleaved totem-pole PFC stage; switches at 65 kHz with 520 V VDS peak. Use Value: 102 mΩ RDS(on) and 0.56 °C/W RthJC enable >98.5% efficiency at full load without forced air cooling. |
| Solar Microinverter | EV Traction Inverter Auxiliary Supply |
|
Use Scenario: 300–600 V DC input microinverter with transformerless H5 topology and 50 kHz switching. IC Role / Device Role / Timing Role: High-side bridge leg switch subjected to repetitive 100 V/ns dv/dt transients during zero-crossing commutation. Use Value: 100 V/ns dv/dt ruggedness prevents parasitic turn-on, eliminating need for negative gate voltage or complex gate drive timing compensation. |
Use Scenario: 12 V auxiliary supply in 800 V EV traction inverter, using flyback converter with 650 V primary switch. IC Role / Device Role / Timing Role: Primary-side MOSFET in 100 kHz flyback; subjected to unclamped inductive energy during MOSFET turn-off. Use Value: 600 mJ EAS rating allows safe operation without external RCD snubber, reducing BOM count and board area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW30N65DM6 | Housing in TO-247-3L package; identical die, but higher RthJC (0.75 °C/W) and no driver source pin. | Limited to lower-frequency (<100 kHz) or forced-air-cooled designs; unsuitable for ultra-low-inductance gate loops. | Select when legacy TO-247 footprint compatibility is required and thermal margin exceeds 25 °C/W. |
| IXFH30N65X2 | 650 V, 120 mΩ, 30 A; uses X2 technology with higher Qg (62 nC) and slower trr (200 ns); not AEC-Q101 qualified. | Better suited for cost-sensitive industrial SMPS where automotive qualification is unnecessary. | Prefer for non-automotive 1–3 kW PSUs where gate drive simplicity outweighs dv/dt and recovery performance. |
Compared with STW30N65DM6 and IXFH30N65X2, STH30N65DM6-7AG delivers superior thermal performance (0.56 vs. 0.75/1.2 °C/W), lower switching losses (46 vs. 62 nC Qg, 126 vs. 200 ns trr), and automotive-grade reliability - making it optimal for space- and efficiency-critical OBC and traction auxiliary systems.
Availability
STH30N65DM6-7AG is available at Aetrix Electronics and suitable for on-board chargers, industrial AC-DC power supplies, and solar microinverters requiring stable component supply, automotive qualification, and high dv/dt immunity.
Supply support for STH30N65DM6-7AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.
This device belongs to the MDmesh DM6 family - engineered specifically for high-efficiency, high-frequency hard-switched and resonant power converters demanding low Qrr, high ruggedness, and AEC-Q101 compliance.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STH30N65DM6-7AG supports 18 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS13646 Rev 3. This derating reflects thermal limits of the H²PAK-7 package and ensures safe operation within SOA boundaries up to 150 °C junction temperature.
Does this MOSFET require an external gate resistor for stability?
Yes - a gate resistor (typically 4.7 Ω) is recommended to dampen ringing caused by low gate impedance and PCB trace inductance. Figure 13 in DS13646 shows the standard test circuit using RG = 4.7 Ω, and measured td(on)/td(off) values assume this configuration.
Can the driver source (pin 2) and power source (pins 3–7) be shorted together?
No - shorting driver source and power source defeats the dual-source architecture's purpose. Pin 2 must connect only to the gate driver's reference, while pins 3–7 return high di/dt load current directly to the power ground plane to prevent gate loop coupling and false turn-on.
Is the body diode suitable for synchronous rectification?
No - although fast (trr = 126 ns), the body diode has relatively high VSD (1.6 V at 28 A) and lacks controlled reverse recovery slope. It is intended for freewheeling only; external Schottky or SiC diodes are preferred for synchronous rectification in high-efficiency designs.
STH30N65DM6-7AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ DM2
- Package/Case:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 223W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- H2PAK-7
STH30N65DM6-7AG FAQ
1.How can I place an order for STH30N65DM6-7AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STH30N65DM6-7AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STH30N65DM6-7AG reliable?
The price and inventory of STH30N65DM6-7AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH30N65DM6-7AG is usually 5 days.
3.What payment methods are accepted for STH30N65DM6-7AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH30N65DM6-7AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STH30N65DM6-7AG?
STH30N65DM6-7AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STH30N65DM6-7AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STH30N65DM6-7AG?
For technical support, including STH30N65DM6-7AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH30N65DM6-7AG requirements.
6.How does Aetrix verify that STH30N65DM6-7AG is sourced from the original manufacturer or authorized distributors?
All STH30N65DM6-7AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH30N65DM6-7AG meets industry standards.
7.What is the process for return or replacement of STH30N65DM6-7AG?
All STH30N65DM6-7AG units undergo pre-shipment inspection (PSI). If there is an issue with STH30N65DM6-7AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STH30N65DM6-7AG part is unused and in its original packaging.
Return procedure for STH30N65DM6-7AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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