STMicroelectronics STH320N4F6-2

Overview

STH320N4F6-2 from STMicroelectronics is an automotive-grade N-channel 40 V, 1.1 mΩ typ. R_DS(on), 200 A continuous drain current Power MOSFET in H²PAK-2 package, qualified to AEC-Q101 and designed for high-efficiency DC-DC converters and motor control inverters in electric power steering (EPS) and 48 V mild-hybrid systems.

For engineers reviewing the STH320N4F6-2 datasheet, STH320N4F6-2 pinout, STH320N4F6-2 application, or STH320N4F6-2 equivalent, key selection criteria include its 0.44 °C/W junction-to-case thermal resistance, 240 nC total gate charge, 1.1 mΩ on-resistance at 10 V V_GS, 800 A pulsed drain capability, and H²PAK-2 surface-mount thermal pad layout compatibility with high-power PCB heatsinking.

Technical Context

This device uses ST's STripFET™ F6 trench-gate technology to achieve ultra-low R_DS(on) and gate charge while maintaining high avalanche ruggedness (E_AS = 920 mJ). It operates across −55 °C to 175 °C junction temperature range and supports fast switching with t_d(on) = 28 ns and t_f = 95 ns under standard test conditions.

The H²PAK-2 package integrates a thermally optimized copper tab (drain-connected) and three solderable source terminals, enabling low-inductance, high-current routing and direct thermal coupling to PCB copper planes. Gate drive requires only 10 V for full enhancement, with V_GS(th) specified between 2 V and 4 V.

Key Specifications

Pinout & Package

H²PAK-2 package: single-sided surface-mount power package with exposed copper drain tab (top side thermal interface) and three solderable terminals on bottom side - Pin 1 (Gate), Pins 2 & 3 (Source), Drain connected to large metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V high-current power MOSFET applications.

Compared with IPP026N04L and NTMFS4C101N, STH320N4F6-2 uniquely combines AEC-Q101 qualification, 200 A package-limited current, and sub-1.2 mΩ on-resistance in a thermally optimized H²PAK-2 layout-making it the only option validated for production EPS and OBC modules requiring both high power density and automotive reliability.

Availability

STH320N4F6-2 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC-DC converters, and onboard charger (OBC) input stages requiring stable component supply, long-term automotive lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for STH320N4F6-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STH320N4F6-2 belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability automotive power conversion-targeting EPS, battery management, and 48 V system applications demanding low R_DS(on), high avalanche tolerance, and AEC-Q101 compliance.

FAQ

Is STH320N4F6-2 pin-compatible with STH320N4F6-6?

No. STH320N4F6-2 uses H²PAK-2 (3-terminal: G, S, S) with a single drain tab, while STH320N4F6-6 uses H²PAK-6 (7-terminal: G, S×5, D-tab) with five source pins and different PCB footprint. Layout redesign and thermal pad revalidation are required for substitution.

What is the maximum recommended PCB copper area for optimal thermal performance?

ST recommends a minimum 1 inch² (645 mm²) of 2 oz Cu on the primary side connected to the drain tab, with thermal vias (≥12×0.3 mm diameter) to inner/secondary ground planes. With this layout, R_thj-pcb improves from 35 °C/W to ≤12 °C/W, enabling 150 W continuous dissipation at T_A = 85 °C.

Does the body diode support synchronous rectification in continuous conduction mode?

Yes. The body diode exhibits V_SD = 1.1 V at 80 A and t_rr = 58.7 ns with low Q_rr = 99.2 nC, enabling efficient synchronous rectification in buck-derived topologies up to 100 kHz when actively commutated with precise gate timing.

Can STH320N4F6-2 be paralleled for higher current applications?

Yes, but with strict layout symmetry: matched gate trace lengths, Kelvin source connections, and shared thermal plane. Derating to 160 A per device is recommended in parallel configurations to maintain safe SOA margins and avoid current imbalance due to R_DS(on) tolerance (±20%) and thermal coupling effects.