Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STH320N4F6-6

Part No.:
STH320N4F6-6
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixSTH320N4F6-6.pdf
Description:
MOSFET N-CH 40V 200A H2PAK-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:976

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STH320N4F6-6 from STMicroelectronics is an automotive-grade N-channel 40 V, 1.1 mΩ typ. RDS(on), 200 A continuous drain current Power MOSFET in H²PAK-6 package, qualified to AEC-Q101 and optimized for high-efficiency switching in traction inverters, DC-DC converters, and battery disconnect units.

For engineers reviewing the STH320N4F6-6 datasheet, STH320N4F6-6 pinout, STH320N4F6-6 application, or STH320N4F6-6 equivalent, key selection criteria include its 1.1 mΩ typical on-resistance at VGS = 10 V, 240 nC total gate charge, 0.44 °C/W junction-to-case thermal resistance, and H²PAK-6 7-terminal layout supporting high-current source return paths.

Technical Context

This device uses ST's STripFET™ F6 trench-gate technology to achieve ultra-low conduction loss while maintaining robust avalanche capability (EAS = 920 mJ) and fast switching (td(off) = 190 ns typ.). Its gate threshold voltage (2–4 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers.

The H²PAK-6 package integrates a large exposed drain tab (Pin 1) and six parallel source terminals (Pins 2–7), enabling low-inductance, high-current PCB routing and efficient thermal transfer to heatsinks via the bottom-side copper tab.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage suitable for 12 V/24 V/48 V automotive battery systems and 400 V traction inverter auxiliary stages.
RDS(on) typ.1.1 mΩ at VGS = 10 V, ID = 80 A - Enables <1 W conduction loss at 100 A, critical for thermally constrained power modules.
ID cont.200 A at TC = 25 °C - Package-limited current rating; sustained operation requires active cooling due to PTOT = 340 W.
Qg240 nC - Low gate drive energy reduces driver IC stress and switching losses in high-frequency (>20 kHz) PWM applications.
Rthj-case0.44 °C/W - Enables direct heatsink mounting for junction temperatures up to 175 °C without derating under steady-state conditions.
EAS920 mJ - Confirmed unclamped inductive switching ruggedness supports fault-tolerant motor control and load dump protection.

Pinout & Package

H²PAK-6 is a surface-mount, thermally enhanced power package with a single large drain tab (exposed copper on bottom) and seven terminals: Pin 1 (Drain/TAB), Pins 2–7 (Source). The package features dual-sided thermal interface capability and optimized copper area for high-current PCB trace routing.

Pin/TerminalCircuit RoleDesign Meaning
1 (TAB)DrainPrimary high-current drain connection; electrically and thermally coupled to exposed copper pad on underside of package.
2, 3, 4, 5, 6, 7SourceSix parallel source terminals reduce package inductance and distribute current evenly across PCB copper pour.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive under-hood use per stress test requirements including temperature cycling, HTRB, and UHAST.
Ultra-low RDS(on)1.1 mΩ typ. minimizes I²R losses in high-current paths, directly improving system efficiency in EV battery management and DC-DC stages.
Low Qg and Qgd240 nC total gate charge and 75.2 nC gate-drain charge enable faster turn-on/turn-off with reduced Miller effect and EMI.
High avalanche energy rating920 mJ single-pulse EAS supports reliable operation during short-circuit events in motor drives and power distribution units.

Applications

Electric Power Steering (EPS)Traction Inverter Auxiliary Stage

Use Scenario: High-reliability 12 V motor control for steering assist actuation under transient load and vibration.

IC Role / Device Role / Timing Role: Main N-channel switch in three-phase inverter half-bridge, operating at 10–20 kHz PWM frequency.

Use Value: 1.1 mΩ RDS(on) limits conduction loss to <1.2 W at 100 A, reducing heatsink size by 35% vs. legacy F5 devices.

Use Scenario: Isolation and pre-charge switching in 400 V traction inverter DC-link subsystems.

IC Role / Device Role / Timing Role: High-current bidirectional switch for battery contactor emulation and soft-start sequencing.

Use Value: 200 A continuous rating and 800 A pulsed capability support >100 kA fault current interruption with external fusing.

48 V Mild Hybrid Battery DisconnectOnboard Charger (OBC) DC-DC Stage

Use Scenario: Solid-state replacement for mechanical relays in 48 V stop-start and regenerative braking energy routing.

IC Role / Device Role / Timing Role: Bidirectional high-side switch controlling power flow between Li-ion battery pack and 48 V bus.

Use Value: AEC-Q101 qualification and 175 °C Tj rating ensure reliability over 15-year vehicle lifetime in under-hood environments.

Use Scenario: Primary-side synchronous rectification in isolated LLC resonant DC-DC converter for OBC auxiliary power supply.

IC Role / Device Role / Timing Role: Low-loss secondary-side switch operating at 200–500 kHz with zero-voltage switching (ZVS) assist.

Use Value: 240 nC Qg enables ZVS over full load range, reducing switching loss by 42% compared to SiC alternatives at <300 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXFH210N30X3300 V VDS, 2.1 mΩ RDS(on), TO-247 package, higher Rthj-case (0.55 °C/W)Designed for industrial 300 V bus systems; not AEC-Q101 qualifiedSelect when higher voltage margin is required and automotive qualification is unnecessary.
IPB180N04S4-0240 V VDS, 1.8 mΩ RDS(on), TO-263-7 package, lower Qg (170 nC), non-automotive gradeLacks AEC-Q101 validation; smaller thermal footprint than H²PAK-6Prefer for cost-sensitive industrial DC-DC where automotive reliability is not mandated.

Compared with IXFH210N30X3 and IPB180N04S4-02, STH320N4F6-6 uniquely combines automotive qualification, lowest RDS(on) in its class, and H²PAK-6's 6-source-pin layout-making it optimal for space-constrained, high-current automotive power stages requiring long-term reliability.

Availability

STH320N4F6-6 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid battery disconnect, and onboard charger (OBC) DC-DC stage applications requiring stable component supply and automotive-grade traceability.

Supply support for STH320N4F6-6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ F6 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in electrified vehicle subsystems including battery management, motor control, and DC-DC conversion.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The STH320N4F6-6 has a specified operating junction temperature range of –55 °C to +175 °C. For continuous operation at rated 200 A drain current, thermal design must maintain Tj ≤ 175 °C using the measured Rthj-case = 0.44 °C/W and appropriate heatsink interface resistance. Derating is required above TC = 100 °C per datasheet Table 2.

Does this MOSFET require a negative gate drive for safe turn-off?

No. The device specifies ±20 V absolute maximum gate-source voltage, but standard 0 V to 10 V gate drive is sufficient for full enhancement and safe operation. A negative gate drive (e.g., –5 V) is optional and used only to improve noise immunity in high-dV/dt environments-not required for functional reliability.

Can STH320N4F6-6 be paralleled with other units for higher current handling?

Yes-its positive temperature coefficient of RDS(on) (confirmed in Figure 11) ensures inherent current sharing when paralleled. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and identical thermal mounting to avoid thermal runaway. ST recommends using gate resistors ≤ 4.7 Ω per device.

Is the source-drain diode suitable for freewheeling in inductive loads?

Yes-the integrated body diode is characterized with trr = 58.7 ns and Qrr = 99.2 nC at Tj = 150 °C, making it suitable for synchronous rectification and freewheeling in hard-switched and resonant topologies. However, its VSD = 1.1 V at 80 A indicates higher conduction loss than discrete Schottky diodes in low-voltage (<12 V) applications.

STH320N4F6-6 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
DeepGATE™, STripFET™ VI
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
240 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13800 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
H2PAK-6

STH320N4F6-6 FAQ

1.How can I place an order for STH320N4F6-6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH320N4F6-6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH320N4F6-6 reliable?

The price and inventory of STH320N4F6-6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH320N4F6-6 is usually 5 days.

3.What payment methods are accepted for STH320N4F6-6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH320N4F6-6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH320N4F6-6?

STH320N4F6-6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH320N4F6-6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH320N4F6-6?

For technical support, including STH320N4F6-6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH320N4F6-6 requirements.

6.How does Aetrix verify that STH320N4F6-6 is sourced from the original manufacturer or authorized distributors?

All STH320N4F6-6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH320N4F6-6 meets industry standards.

7.What is the process for return or replacement of STH320N4F6-6?

All STH320N4F6-6 units undergo pre-shipment inspection (PSI). If there is an issue with STH320N4F6-6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH320N4F6-6 part is unused and in its original packaging.

Return procedure for STH320N4F6-6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STH320N4F6-6 Tags

  • STH320N4F6-6
  • STH320N4F6-6 PDF
  • STH320N4F6-6 Datasheet
  • STH320N4F6-6 Specifications
  • STH320N4F6-6 Images
  • STMicroelectronics
  • STMicroelectronics STH320N4F6-6
  • Buy STH320N4F6-6
  • STH320N4F6-6 Price
  • STH320N4F6-6 Distributor
  • STH320N4F6-6 Supplier
  • STH320N4F6-6 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER