STMicroelectronics STH410N4F7-6AG

Overview

STH410N4F7-6AG from STMicroelectronics is an automotive-grade N-channel 40 V, 0.8 mΩ typ. R_DS(on), 200 A continuous drain current Power MOSFET in H²PAK-6 package, designed for high-efficiency DC-DC converters and battery disconnect switches in 12 V/48 V hybrid vehicle systems.

For engineers reviewing the STH410N4F7-6AG datasheet, STH410N4F7-6AG pinout, STH410N4F7-6AG application, or STH410N4F7-6AG equivalent, key selection criteria include its AEC-Q101 qualification, 0.41 °C/W junction-to-case thermal resistance, 141 nC total gate charge, and low Crss/Ciss ratio for EMI robustness in high-frequency switching designs.

Technical Context

This device employs STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while minimizing gate charge (Qg = 141 nC) and reverse transfer capacitance (Crss = 390 pF). Its optimized capacitance ratio enhances switching controllability under fast dv/dt conditions.

The H²PAK-6 package delivers 0.41 °C/W R_th(j-case) and supports 200 A continuous current at T_case = 100 °C, with silicon-limited current capability of 420 A at 25 °C - constrained only by package thermal and bond-wire limits.

Key Specifications

Pinout & Package

H²PAK-6 is a surface-mount, thermally enhanced 6-terminal power package with isolated source and drain pads, dual drain terminals (D1/D2), dual source terminals (S1/S2), and gate (G) + Kelvin source (KS) connections. It enables low-inductance, high-current PCB routing and direct thermal coupling to heatsink via exposed drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IXTN200N10L2 and IRFB4115PBF, STH410N4F7-6AG uniquely combines AEC-Q101 compliance, sub-1 mΩ R_DS(on), Kelvin source, and H²PAK-6 thermal performance - making it the only option qualified for high-reliability 48 V automotive power conversion where space, efficiency, and safety certification are jointly constrained.

Availability

STH410N4F7-6AG is available at Aetrix Electronics and suitable for automotive battery management systems, 48 V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply and long-term production continuity.

Supply support for STH410N4F7-6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ F7 automotive power MOSFET product line, engineered specifically for high-current, high-reliability switching in 12 V/48 V vehicle electrical architectures with emphasis on thermal efficiency, avalanche robustness, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STH410N4F7-6AG supports 200 A continuous drain current at T_case = 100 °C, as specified in Table 2 of the datasheet. This rating reflects package-limited current capacity; the silicon itself supports up to 420 A at 25 °C, but thermal and bond-wire constraints fix the practical limit at 200 A across the full operational case temperature range.

Does this MOSFET include a Kelvin source connection, and how is it used?

Yes, the H²PAK-6 package provides a dedicated Kelvin source (KS) terminal separate from the main source pads (S1/S2). KS connects directly to the source metallization inside the die, enabling gate driver circuits to reference the true source potential-eliminating voltage drop errors caused by high-current source path inductance and improving switching precision and stability.

Is the STH410N4F7-6AG suitable for synchronous rectification in high-frequency DC-DC converters?

Yes - its 141 nC total gate charge, 74.4 ns reverse recovery time, and 115 nC Q_rr make it well-suited for synchronous rectification in 200–500 kHz isolated DC-DC converters. The low Crss/Ciss ratio further minimizes risk of false turn-on during high dv/dt transitions, supporting reliable zero-voltage switching (ZVS) implementation.

How does the H²PAK-6 package improve thermal performance compared to TO-220 or D²PAK?

H²PAK-6 achieves 0.41 °C/W junction-to-case thermal resistance - significantly lower than typical D²PAK (≈1.2 °C/W) or TO-220 (≈2.5 °C/W) - due to its double-sided copper structure, enlarged exposed drain pad, and optimized internal bond-wire geometry. This allows 200 A operation at 100 °C case temperature without forced airflow or large heatsinks.