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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH60N099DM9-2AG

Name: STH60N099DM9-2AG
Brand: STMicroelectronics
SKU: STH60N099DM9-2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH60N099DM9-2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH60N099DM9-2AG.pdf

Description:: MOSFET N-CH 600V 29A D2PAK

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Inventory:3,248

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Product details

Overview

STH60N099DM9-2AG from STMicroelectronics is an AEC-Q101 qualified N-channel 600 V super-junction Power MOSFET in H²PAK-2 package, featuring 76 mΩ typ. R_DS(on), 27 A continuous drain current at T_C = 25 °C, fast-recovery body diode (t_rr = 130 ns, Q_rr = 0.8 μC), and 120 V/ns dv/dt ruggedness. It targets high-efficiency ZVS phase-shift converters and bridge topologies in automotive and industrial power supplies.

For engineers reviewing the STH60N099DM9-2AG datasheet, STH60N099DM9-2AG pinout, STH60N099DM9-2AG application, or STH60N099DM9-2AG equivalent, key selection criteria include its low gate charge (Q_g = 44 nC), ultra-low C_oss,eq (420 pF), 100% avalanche tested rating (E_AS = 333 mJ), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This device implements ST's MDmesh DM9 multi-drain super-junction architecture to simultaneously minimize conduction loss (R_DS(on) × area) and switching loss via optimized charge distribution. Its fast-recovery body diode achieves low Q_rr and t_rr without external snubbers, enabling hard-switched and resonant topologies.

The H²PAK-2 package delivers 0.7 °C/W junction-to-case thermal resistance and supports high-current routing with a thermally enhanced exposed drain tab. Gate drive requirements are simplified by low input capacitance (C_iss = 2140 pF) and intrinsic gate resistance (R_G = 2 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 400 V in ZVS converters with margin for transients.
R_DS(on) max	99 mΩ - Enables <1.5 W conduction loss at 27 A, critical for >96% efficiency in 1–3 kW PSUs.
I_D (cont.)	27 A @ T_C = 25 °C - Supports high-power density designs with forced-air or heatsink cooling.
Q_g	44 nC - Reduces gate driver power demand and enables 500 kHz+ switching with standard drivers.
t_rr	130 ns @ T_J = 25 °C - Limits diode reverse recovery loss and EMI in bridge-leg commutation.
E_AS	333 mJ - Guarantees robustness against unclamped inductive switching events in motor drives.
dv/dt ruggedness	120 V/ns - Prevents spurious turn-on during high-slew-rate voltage transitions in half-bridge operation.

Pinout & Package

H²PAK-2 is a surface-mount, thermally enhanced power package with an exposed drain tab (TAB) on the bottom side for direct heatsinking. It features three terminals: Gate (pin 1), Source (pins 2 & 3), and Drain (TAB). The package complies with ECOPACK environmental standards and supports tape-and-reel automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
TAB	Drain (D)	Exposed metal pad - primary thermal path to heatsink; must be electrically connected to high-side DC bus node.
1	Gate (G)	Low-impedance control input - requires <44 nC charge for full enhancement; routed away from noisy power traces.
2, 3	Source (S)	Common source node - pins 2 and 3 are internally bonded to same potential; used for Kelvin sensing or low-inductance return path.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging systems per stress test requirements (HTOL, TC, UHAST).
Fast-recovery body diode	t_rr = 130 ns and Q_rr = 0.8 μC enable zero-voltage switching in LLC and phase-shift full-bridge converters.
Worldwide best R_DS(on)/area	Super-junction DM9 cell pitch yields 22% lower specific on-resistance than prior-generation silicon MOSFETs at 600 V.
100% avalanche tested	Each unit undergoes single-pulse unclamped inductive switching test to 333 mJ, ensuring production lot robustness.
Extremely high dv/dt ruggedness	120 V/ns rating eliminates need for gate resistors or RC snubbers in high-frequency half-bridge layouts.

Applications

On-Board Charger (OBC)

Industrial SMPS

Use Scenario: 6.6 kW bidirectional OBC using dual-phase interleaved totem-pole PFC and CLLC DC-DC stage.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC bridge leg; operates at 100–200 kHz with ZVS.

Use Value: Low Q_rr and fast t_rr reduce body diode conduction loss by 40% vs. standard SJ-MOSFETs, improving full-load efficiency by 0.8%.

Use Scenario: 3 kW telecom rectifier with active clamp forward topology and synchronous rectification.

IC Role / Device Role / Timing Role: Primary-side main switch; handles 400 V DC input with 500 kHz PWM and soft-switching transitions.

Use Value: 99 mΩ R_DS(on) and 0.7 °C/W R_thJC allow 25 °C lower junction temperature vs. comparable 650 V devices, extending lifetime by 2× under 70 °C ambient.

EV DC Fast Charging Module

Server PSU

Use Scenario: 15 kW modular SiC hybrid inverter where silicon MOSFETs handle auxiliary power conversion stages.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated 48 V output stage; commutates at 300 kHz with hard switching.

Use Value: 120 V/ns dv/dt ruggedness prevents false triggering during rapid bus voltage transitions, eliminating gate oscillation failures in field deployments.

Use Scenario: 1.5 kW redundant server PSU with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Hot-swap MOSFET in input protection circuit; sustains 105 A pulsed current during inrush limiting.

Use Value: 105 A I_DM rating and 179 W P_TOT support 2× peak current derating while maintaining <100 °C case temperature under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-recovery MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P7XKSA1	650 V rating, 99 mΩ R_DS(on), 23 A I_D, TO-247-3 package, no AEC-Q101	Higher voltage margin but lower current rating and no automotive qualification	Select when 650 V system margin is required and AEC-Q101 is not mandated.
IXFH60N60X3	600 V, 0.065 Ω R_DS(on), 60 A I_D, TO-247-3, no fast diode, no AEC-Q101	Higher current capacity but lacks integrated fast-recovery diode and automotive qualification	Select for non-automotive 600 V hard-switched SMPS requiring higher I_D and lower R_DS(on).

Compared with IPW60R099P7XKSA1 and IXFH60N60X3, STH60N099DM9-2AG uniquely combines AEC-Q101 qualification, fast-recovery diode, and H²PAK-2 thermal performance-making it the only choice for space-constrained, automotive-grade ZVS converters where diode Q_rr and dv/dt immunity are design-critical.

Availability

STH60N099DM9-2AG is available at Aetrix Electronics and suitable for on-board chargers, industrial SMPS, and EV DC fast charging modules requiring stable component supply, automotive-grade reliability, and high-frequency switching capability.

Supply support for STH60N099DM9-2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM9 super-junction MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in automotive and industrial applications demanding low R_DS(on), fast diode recovery, and rugged transient performance.

FAQ

What is the maximum recommended gate-source voltage for STH60N099DM9-2AG?

The absolute maximum V_GS is ±30 V per datasheet Table 1. Operation above ±20 V risks gate oxide degradation; ST recommends limiting V_GS to +10 V to +15 V for reliable enhancement and minimizing Miller-induced shoot-through in bridge configurations.

Does STH60N099DM9-2AG require a negative gate voltage for turn-off?

No. The device has a nominal V_GS(th) of 4.0 V and fully turns off at 0 V gate drive. A negative gate voltage is not required, though –5 V may improve noise immunity in high-dv/dt environments; the gate oxide is rated for –30 V.

How is the H²PAK-2 package thermally mounted in practice?

The exposed drain TAB must be soldered directly to a copper pour on the PCB or attached to an external heatsink using thermally conductive paste and mechanical clamping. Thermal vias under the TAB (≥8× 0.3 mm diameter) are required to achieve the specified 0.7 °C/W R_thJC to the board.

Can STH60N099DM9-2AG replace older MDmesh D-series MOSFETs in existing designs?

Yes, with layout review: it shares the same H²PAK-2 footprint and pinout, but offers lower R_DS(on), faster t_rr, and improved dv/dt ruggedness. Gate drive timing may need adjustment due to reduced Q_g and C_iss; verify SOA compliance under worst-case switching conditions.

STH60N099DM9-2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2140 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STH60N099DM9-2AG FAQ

1.How can I place an order for STH60N099DM9-2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STH60N099DM9-2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH60N099DM9-2AG reliable?

The price and inventory of STH60N099DM9-2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH60N099DM9-2AG is usually 5 days.

3.What payment methods are accepted for STH60N099DM9-2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH60N099DM9-2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH60N099DM9-2AG?

STH60N099DM9-2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH60N099DM9-2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH60N099DM9-2AG?

For technical support, including STH60N099DM9-2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH60N099DM9-2AG requirements.

6.How does Aetrix verify that STH60N099DM9-2AG is sourced from the original manufacturer or authorized distributors?

All STH60N099DM9-2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH60N099DM9-2AG meets industry standards.

7.What is the process for return or replacement of STH60N099DM9-2AG?

All STH60N099DM9-2AG units undergo pre-shipment inspection (PSI). If there is an issue with STH60N099DM9-2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH60N099DM9-2AG part is unused and in its original packaging.

Return procedure for STH60N099DM9-2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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