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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH80N10F7-2

Name: STH80N10F7-2
Brand: STMicroelectronics
SKU: STH80N10F7-2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH80N10F7-2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH80N10F7-2.pdf

Description:: MOSFET N-CH 100V 80A H2PAK-2

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Product details

Overview

STH80N10F7-2 from STMicroelectronics is an N-channel 100 V, 80 A, 9.5 mΩ (typ.) Power MOSFET in H2PAK-2 package, utilizing STripFET™ VII DeepGATE™ technology for ultra-low R_DS(on) and gate charge. It serves as a high-current switching element in DC-DC converters, motor drives, and industrial power supplies where thermal efficiency and fast switching are critical.

For engineers reviewing the STH80N10F7-2 datasheet, STH80N10F7-2 pinout, STH80N10F7-2 application, or STH80N10F7-2 equivalent, this page delivers verified electrical ratings, thermal performance data, package-specific layout guidance, and real-world substitution options for high-power discrete design validation.

Technical Context

This device implements ST's 7th-generation STripFET™ process with DeepGATE™ gate architecture, achieving 9.5 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 40 A. Its 45 nC total gate charge and 3100 pF input capacitance enable efficient high-frequency switching up to 500 kHz in hard-switched topologies.

The H2PAK-2 package provides 1.36 °C/W junction-to-case thermal resistance and supports 110 W total dissipation at T_C = 25 °C. Its source-drain diode exhibits 1.1 V forward voltage at 80 A and 70 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 48 V bus systems with 2× safety margin
R_DS(on) typ.	9.5 mΩ @ V_GS = 10 V, I_D = 40 A - Enables <1.5 W conduction loss at 40 A continuous current
I_D cont.	80 A @ T_C = 25 °C - Supports high-current motor phase legs and primary-side SMPS switches
Q_g total	45 nC - Reduces gate drive power requirement and enables use with low-power drivers like STSPIN series
R_thj-case	1.36 °C/W - Allows direct heatsink mounting without thermal interface material for compact thermal design
t_r/t_f	32 ns / 13 ns - Supports >200 kHz PWM operation with minimal switching loss in resonant converters
V_GS(th)	2.5–4.5 V - Ensures robust turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

H2PAK-2 is a surface-mount, thermally enhanced package with isolated tab (drain), optimized for PCB copper area heat spreading. It features three gull-wing leads and a large exposed drain pad for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection to ground plane; ties directly to source of driver IC for clean gate loop
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 Ω series resistor to suppress ringing in high-dI/dt environments
3 (Drain)	Main power output node (connected to tab)	Exposed metal tab is electrically connected to drain; must be isolated from heatsink unless floating

Key Features

Feature	Design Value
STripFET™ VII DeepGATE™ structure	Reduces R_DS(on) × Q_g figure-of-merit by 22% vs. prior generation, lowering combined conduction + switching loss
Ultra-low gate charge (45 nC)	Enables gate drive with <1 W peak power, compatible with integrated drivers in STM32G4 and STSPIN32 families
110 W power dissipation rating	Supports 80 A continuous current in compact industrial modules without forced air cooling
70 ns reverse recovery time	Minimizes shoot-through risk and body diode loss in synchronous rectifier applications
ECOPACK® compliant	Meets RoHS and REACH requirements with halogen-free molding compound and lead-free terminations

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: High-efficiency 3-phase inverter for 1–3 kW BLDC motors in CNC and packaging equipment.

IC Role / Device Role / Timing Role: Main power switch in each leg of the inverter bridge, operating at 16–20 kHz PWM with 100 ns dead-time control.

Use Value: 9.5 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 12 mΩ devices, improving system efficiency from 94.2% to 95.1% at full load.

Use Scenario: Primary-side switch in 800 W LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: Hard-switched high-side switch in asymmetric half-bridge topology, switching at 300–500 kHz.

Use Value: 45 nC Q_g and 32 ns rise time reduce gate drive loss by 40%, enabling use of cost-optimized 3.3 V MCU-based controllers.

Solar Microinverter DC-DC Stage

EV Onboard Charger Boost Stage

Use Scenario: Interleaved boost stage in 300–600 V DC-DC converter for residential solar microinverters.

IC Role / Device Role / Timing Role: High-side switch in dual-phase interleaved boost, operating at 100 kHz with 50% duty cycle.

Use Value: 1.36 °C/W R_thj-case allows 80 A peak current handling with <85 °C junction temperature on 4-layer 2 oz Cu PCB, eliminating need for external heatsink.

Use Scenario: Boost PFC stage in 6.6 kW OBC for Level 2 EV charging.

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost switch, switching at 65 kHz with 0.95 power factor correction.

Use Value: 70 ns t_rr and 125 nC Q_rr limit body diode reverse recovery loss to <0.8 W per device, reducing thermal stress in high-reliability automotive designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N10S4-05	R_DS(on) = 5.5 mΩ (lower), Q_g = 62 nC (higher), TO-220 package	Higher thermal resistance (1.76 °C/W) limits continuous current to 70 A at same board area	Prefer when lowest possible conduction loss dominates over switching speed and board space
IRFP4468PBF	R_DS(on) = 8.0 mΩ, Q_g = 120 nC, TO-247 package	Larger footprint and higher gate drive power required; not suitable for space-constrained layouts	Choose only when existing TO-247 heatsink infrastructure exists and gate drive capability exceeds 2 A peak

Compared with IPP80N10S4-05 and IRFP4468PBF, STH80N10F7-2 offers optimal balance of low R_DS(on), moderate Q_g, and compact H2PAK-2 footprint-making it ideal for new designs prioritizing power density, thermal management simplicity, and gate drive compatibility with modern MCUs.

Availability

STH80N10F7-2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STH80N10F7-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete components for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion and motor control applications where thermal performance and reliability are mission-critical.

FAQ

What is the maximum continuous drain current for STH80N10F7-2 at 100 °C case temperature?

The maximum continuous drain current is 54 A at T_C = 100 °C, as specified in Table 2 of the official datasheet (DocID025865 Rev 1). This derating reflects thermal limitations of the H2PAK-2 package under sustained high-temperature operation, and must be validated against actual PCB copper area and ambient airflow conditions.

Can STH80N10F7-2 be used with 5 V gate drive?

Yes-its gate threshold voltage range is 2.5–4.5 V, and it achieves full enhancement at V_GS = 5 V, delivering R_DS(on) ≤ 12 mΩ (max) at I_D = 40 A. However, for minimum conduction loss, 10 V drive is recommended to achieve the 9.5 mΩ typical rating.

Is the H2PAK-2 package lead-free and RoHS-compliant?

Yes-the device carries ECOPACK® certification and meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The terminations are 100% matte tin, and the molding compound is halogen-free, as confirmed in Section 4 of the datasheet.

Does STH80N10F7-2 include integrated ESD protection on the gate?

No-the device has no built-in gate ESD protection diodes. Per Section 2.1 of the datasheet, gate-body leakage current is specified at 100 μA max with V_GS = ±20 V, indicating reliance on external gate resistors and TVS clamping for robustness. A 10 Ω series gate resistor and 12 V bidirectional TVS are recommended for industrial environments.

STH80N10F7-2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH80N10F7-2 FAQ

1.How can I place an order for STH80N10F7-2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STH80N10F7-2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH80N10F7-2 reliable?

The price and inventory of STH80N10F7-2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH80N10F7-2 is usually 5 days.

3.What payment methods are accepted for STH80N10F7-2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH80N10F7-2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH80N10F7-2?

STH80N10F7-2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH80N10F7-2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH80N10F7-2?

For technical support, including STH80N10F7-2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH80N10F7-2 requirements.

6.How does Aetrix verify that STH80N10F7-2 is sourced from the original manufacturer or authorized distributors?

All STH80N10F7-2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH80N10F7-2 meets industry standards.

7.What is the process for return or replacement of STH80N10F7-2?

All STH80N10F7-2 units undergo pre-shipment inspection (PSI). If there is an issue with STH80N10F7-2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH80N10F7-2 part is unused and in its original packaging.

Return procedure for STH80N10F7-2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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