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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STH80N10LF7-2AG

Name: STH80N10LF7-2AG
Brand: STMicroelectronics
SKU: STH80N10LF7-2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STH80N10LF7-2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STH80N10LF7-2AG.pdf

Description:: MOSFET N-CH 100V 80A H2PAK-2

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Product details

Overview

STH80N10LF7-2AG from STMicroelectronics is an AEC-Q101 qualified N-channel automotive power MOSFET in H²PAK-2 package, rated for 100 V V_DS, 7 mΩ typ. R_DS(on) at V_GS = 10 V, 80 A continuous drain current, and 110 W total dissipation - deployed in high-efficiency DC-DC converters and motor control stages of EV traction inverters.

For engineers reviewing the STH80N10LF7-2AG datasheet, STH80N10LF7-2AG pinout, STH80N10LF7-2AG application, or STH80N10LF7-2AG equivalent, key selection criteria include its low Cr_ss/C_iss ratio for EMI immunity, 108 mJ single-pulse avalanche energy, 1.36 °C/W junction-to-case thermal resistance, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This device employs STripFET™ F7 trench-gate technology to achieve ultra-low on-resistance while minimizing gate charge (Q_g = 28.3 nC) and reverse transfer capacitance (C_rss = 99 pF), enabling fast switching with reduced switching losses and improved EMI behavior in hard-switched topologies.

Its enhanced avalanche ruggedness (E_AS = 108 mJ at T_j ≤ 25 °C) and robust body diode (t_rr = 55.7 ns, Q_rr = 79.6 nC) support reliable operation in inductive load switching and unclamped inductive load (UIL) conditions common in automotive solenoid drivers and BLDC phase-legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 60 V nominal automotive bus systems with 20 %+ voltage margin for transients
R_DS(on) max	10 mΩ at V_GS = 10 V, ID = 40 A - enables <1 W conduction loss at 30 A, critical for thermally constrained modules
I_D cont	80 A at T_case = 25 °C - delivers high current density in compact H²PAK-2 footprint without external heatsink
E_AS	108 mJ - withstands repetitive inductive energy spikes in starter relays and fuel injector drivers
C_rss/C_iss	99/2900 pF - low ratio improves Miller immunity and reduces gate drive power in high-frequency PWM
R_thj-case	1.36 °C/W - allows direct mounting to copper-clad PCB or cold plate, simplifying thermal design vs. TO-220 or D²PAK

Pinout & Package

H²PAK-2 shallow gullwing package: surface-mount, tab-down configuration with integrated drain-connected thermal pad; optimized for automated assembly and high-power PCB-level thermal management.

Pin/Terminal	Circuit Role	Design Meaning
D (TAB)	Drain	Exposed metal tab - electrically and thermally connected to drain; must be soldered to large copper pour for heat dissipation
G (1)	Gate	Control terminal - requires low-inductance gate loop layout due to 28.3 nC Q_g and fast switching capability
S (2, 3)	Source	Common return path for drain current and gate drive - dual pins reduce source inductance and improve stability

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive temperature range (−55 °C to 175 °C) and mechanical stress per JESD22 standards
Low R_DS(on) × Q_g FoM	7 mΩ × 28.3 nC = 198 mΩ·nC - among lowest in 100 V automotive MOSFET class for high-frequency efficiency
High avalanche ruggedness	108 mJ single-pulse E_AS - eliminates need for external snubbers in solenoid and relay driving circuits
Optimized Cr_ss/C_iss ratio	99/2900 pF = 0.034 - suppresses false turn-on during high dv/dt commutation in half-bridge configurations

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Motor Phases

Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch handling up to 80 A peak current with <10 ns switching transitions.

Use Value: 7 mΩ R_DS(on) and 1.36 °C/W R_thj-case enable >96 % efficiency at full load without forced air cooling.

Use Scenario: Three-phase inverter stage driving 3 kW brushless DC motor in column-assist EPS.

IC Role / Device Role / Timing Role: Low-side switching element operating at 20–40 kHz PWM with synchronous rectification.

Use Value: Fast 55.7 ns t_rr and low Q_rr minimize body-diode conduction loss and associated heating during dead-time.

Onboard Charger (OBC) PFC Stage

Fuel Injector Drivers

Use Scenario: Boost PFC switch in 6.6 kW AC/DC onboard charger for BEVs.

IC Role / Device Role / Timing Role: Hard-switched 100 V MOSFET operating at 65–100 kHz with 80 A peak current.

Use Value: Low Cr_ss/C_iss ratio ensures stable gate drive under 100 V/ns dv/dt, reducing EMI filter size and cost.

Use Scenario: High-speed, high-current driver for multi-hole gasoline direct injectors.

IC Role / Device Role / Timing Role: Low-side switch controlling 12–20 A pulsed current with <1 µs turn-off.

Use Value: 108 mJ E_AS rating safely absorbs inductive kickback without clamping diodes or TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N10N5	R_DS(on) = 3.6 mΩ (lower), Q_g = 47 nC (higher), TO-220FP package	Larger footprint and higher gate drive loss; better for low-frequency, high-current linear regulation	Prefer when thermal interface allows TO-220 mounting and gate drive capability supports higher Q_g
ON Semiconductor NTMFS5C675NL	R_DS(on) = 6.7 mΩ, Q_g = 22.5 nC, SO-8FL package, no AEC-Q101	Smaller package but lower avalanche rating (E_AS = 42 mJ); not qualified for automotive under-hood use	Select only for non-automotive industrial DC-DC where space is critical and transient immunity is less demanding

Compared with IPP036N10N5 and NTMFS5C675NL, STH80N10LF7-2AG uniquely balances ultra-low R_DS(on), industry-leading E_AS, AEC-Q101 compliance, and surface-mount H²PAK-2 thermal performance - making it optimal for space-constrained, high-reliability automotive power stages.

Availability

STH80N10LF7-2AG is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and onboard charger PFC stages requiring stable component supply, long-term lifecycle assurance, and traceable AEC-Q101-compliant sourcing.

Supply support for STH80N10LF7-2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This part belongs to ST's STripFET™ F7 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 48 V and 60 V automotive subsystems including electrified chassis and battery management.

FAQ

What is the maximum safe operating case temperature for continuous operation?

The device supports continuous operation up to T_case = 100 °C, delivering 54 A I_D at that temperature. Derating follows the datasheet's SOA curve: at 100 °C case, maximum V_DS is limited to ~60 V for 10 ms pulses. Thermal design must maintain case temperature below 100 °C under worst-case ambient and power dissipation.

Does the H²PAK-2 package require solder paste stencil optimization?

Yes - the exposed drain tab demands a 70–80 % open-area stencil aperture with 0.15 mm thickness to ensure void-free solder joint formation and optimal thermal transfer. ST recommends using NiAu-finished PCB pads and reflow profile with peak temperature ≥235 °C for full wetting of the tab.

Can this MOSFET replace older ST H²PAK devices like STD80N10F7 without layout changes?

No - although both use H²PAK-2, STH80N10LF7-2AG has different pin assignment (D-TAB, G-1, S-2&3) and tighter mechanical tolerances. The STD80N10F7 uses standard H²PAK-2 with alternate pinout and lacks AEC-Q101 qualification. PCB footprint and gate routing must be verified against DS11708 Figure 19.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes - with t_rr = 55.7 ns and Q_rr = 79.6 nC at 80 A, the body diode enables efficient synchronous rectification up to 250 kHz. However, external Schottky diodes are still recommended for >300 kHz operation to avoid reverse recovery losses and associated EMI.

STH80N10LF7-2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 28.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-2

STH80N10LF7-2AG FAQ

1.How can I place an order for STH80N10LF7-2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STH80N10LF7-2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STH80N10LF7-2AG reliable?

The price and inventory of STH80N10LF7-2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STH80N10LF7-2AG is usually 5 days.

3.What payment methods are accepted for STH80N10LF7-2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STH80N10LF7-2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STH80N10LF7-2AG?

STH80N10LF7-2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STH80N10LF7-2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STH80N10LF7-2AG?

For technical support, including STH80N10LF7-2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STH80N10LF7-2AG requirements.

6.How does Aetrix verify that STH80N10LF7-2AG is sourced from the original manufacturer or authorized distributors?

All STH80N10LF7-2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STH80N10LF7-2AG meets industry standards.

7.What is the process for return or replacement of STH80N10LF7-2AG?

All STH80N10LF7-2AG units undergo pre-shipment inspection (PSI). If there is an issue with STH80N10LF7-2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STH80N10LF7-2AG part is unused and in its original packaging.

Return procedure for STH80N10LF7-2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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