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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STHU32N65DM6AG

Name: STHU32N65DM6AG
Brand: STMicroelectronics
SKU: STHU32N65DM6AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STHU32N65DM6AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: STHU32N65DM6AG.pdf

Description:: AUTOMOTIVE-GRADE N-CHANNEL 650 V

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Product details

Overview

STHU32N65DM6AG from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V, 97 mΩ (max) MDmesh DM6 Power MOSFET in HU3PAK package, featuring fast-recovery body diode (trr = 122 ns), low gate charge (Qg = 52.6 nC), and 100% avalanche tested operation. It delivers high-efficiency switching in ZVS phase-shift converters and high-voltage bridge topologies for automotive and industrial power supplies.

For engineers reviewing the STHU32N65DM6AG datasheet, STHU32N65DM6AG pinout, STHU32N65DM6AG application, or STHU32N65DM6AG equivalent, key selection criteria include RDS(on) × area efficiency, dv/dt ruggedness (100 V/ns), Qrr (0.62 µC), and Zener-protected gate reliability under harsh transients.

Technical Context

This device implements ST's MDmesh DM6 silicon architecture optimized for high-voltage hard-switching and resonant topologies. Its fast-recovery body diode achieves trr = 122 ns at 37 A/100 A/µs with IRRM = 9 A, enabling reduced snubber losses in full-bridge configurations.

The HU3PAK package integrates a thermally enhanced drain tab and dedicated driver source (pin 2) to minimize source inductance and improve gate control fidelity. Gate drive is optimized for 10 V logic-level operation with VGS(th) = 3.25–4.75 V and RG = 1.5 Ω intrinsic resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in 3-phase PFC and 520 V in ZVS phase-shift converters without derating.
R_DS(on) max	97 mΩ - Enables <1.5 W conduction loss at 37 A continuous drain current (T_C = 25 °C).
Q_g	52.6 nC - Reduces gate drive power and enables efficient 100–300 kHz operation with standard 1-A peak drivers.
trr / Q_rr	122 ns / 0.62 µC - Minimizes reverse recovery losses and EMI in hard-switched bridges; TJ = 25 °C condition.
dv/dt ruggedness	100 V/ns - Sustains rapid voltage transients during turn-off without spurious turn-on, critical for high-dV/dt SiC co-design environments.
E_AS	778 mJ - Supports unclamped inductive switching stress in motor drives and UPS systems without external clamping.
R_thJC	0.51 °C/W - Enables 320 W dissipation at T_C = 25 °C; requires direct heatsink mounting to TAB for thermal path integrity.

Pinout & Package

HU3PAK is a surface-mount, thermally optimized 7-pin power package with exposed drain (TAB) on bottom side, integrated driver source pin (Pin 2), and dual-source configuration (Pins 3–7) for low-inductance current return.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power drain terminal	Exposed copper pad for direct PCB heatsinking; carries full load current and must be soldered to large thermal plane.
Pin 1	Gate	High-impedance control input; driven by isolated gate driver with ≤10 V logic swing and <1.5 Ω series resistance.
Pin 2	Driver Source	Dedicated low-inductance return path for gate driver loop only; decouples gate loop from main power source path.
Pins 3–7	Power Source	Parallel-connected source terminals carrying full 37 A continuous current; reduce bond-wire inductance and improve current sharing.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood applications including engine control modules and on-board chargers.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient overvoltage without degradation or latch-up.
Extremely dv/dt ruggedness	100 V/ns rating ensures immunity to parasitic Miller-induced turn-on in high-frequency half-bridge layouts.
Lower R_DS(on) × area vs prior generation	Improves power density by >20% over MDmesh D5, enabling smaller heatsinks in space-constrained 1–3 kW designs.
100% avalanche tested	Every unit undergoes single-pulse E_AS stress test to 778 mJ, guaranteeing robustness in fault conditions.

Applications

Automotive On-Board Charger (OBC)

Industrial 3-Phase PFC Converter

Use Scenario: Bidirectional AC/DC conversion in 11 kW OBC using interleaved totem-pole PFC and CLLLC DC/DC stages.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC bridge; operates at 100–200 kHz with ZVS-assisted turn-on.

Use Value: Low Q_rr (0.62 µC) and fast trr (122 ns) suppress reverse recovery spikes, reducing EMI filter size by 30% versus legacy Si MOSFETs.

Use Scenario: Active front-end rectifier in 15 kW industrial UPS with harmonic mitigation and regenerative braking support.

IC Role / Device Role / Timing Role: Switching element in 3-level NPC topology; handles 650 V DC-link with 37 A RMS current per phase.

Use Value: 0.51 °C/W R_thJC and parallel source pins enable stable 100 °C case temperature under full load, eliminating forced air cooling.

Server PSU LLC Resonant Converter

Solar String Inverter DC-Link Switch

Use Scenario: Primary-side synchronous rectification in 3.3 kW server PSU with variable-frequency LLC control.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge; commutates at zero voltage with precise timing control.

Use Value: Driver source pin (Pin 2) reduces gate loop inductance by >60%, improving switching consistency and reducing V_GS ringing amplitude below 2 V.

Use Scenario: DC-link switching in 10 kW string inverter handling PV array voltages up to 1000 V with 300 V margin.

IC Role / Device Role / Timing Role: High-voltage DC switch in anti-islanding protection circuit; rated for 650 V blocking with 150 °C junction limit.

Use Value: AEC-Q101 qualification and 100% avalanche testing ensure field reliability in outdoor solar deployments with lightning-induced transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW32N65M6	TO-247 package; identical R_DS(on) (97 mΩ), Q_g (52.6 nC), and V_DS (650 V); lacks driver source pin and HU3PAK thermal performance.	Requires larger heatsink due to R_thJC = 0.75 °C/W; unsuitable for ultra-thin server PSU or automotive OBC board space constraints.	Select when legacy through-hole assembly or higher creepage clearance is required; avoid where PCB thermal management dominates.
IXFH32N65X2	650 V, 105 mΩ, Q_g = 65 nC; no driver source pin; faster trr (95 ns) but lower avalanche rating (E_AS = 420 mJ).	Higher gate drive loss and lower fault tolerance limit use in safety-critical automotive systems.	Prefer for cost-sensitive industrial PFC where AEC-Q101 is not mandated; verify E_AS margin in unclamped inductive loads.

Compared with STW32N65M6 and IXFH32N65X2, STHU32N65DM6AG uniquely combines driver source pin, 0.51 °C/W thermal resistance, and AEC-Q101 validation-making it the only choice for space-constrained, thermally demanding automotive and high-density server power designs.

Availability

STHU32N65DM6AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial 3-phase PFC converters, and server PSU LLC resonant converters requiring stable component supply across multi-year production cycles.

Supply support for STHU32N65DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers with over 40 years of analog and power device innovation.

This device belongs to the MDmesh DM6 family-designed specifically for high-efficiency, high-voltage switching in automotive-grade and industrial power conversion systems where low Q_rr, dv/dt immunity, and thermal density are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 23 A at T_C = 100 °C, as specified in Table 1 (Absolute Maximum Ratings). This derating reflects thermal limits of the HU3PAK package and silicon safe operating area, not gate drive capability. Operation above this current requires active cooling or pulse-width limitation.

Does the driver source pin (Pin 2) require external connection to ground?

Yes-Pin 2 must be connected directly to the gate driver's local ground reference, separate from the main power source (Pins 3–7). This isolates the gate loop from high di/dt source currents, reducing V_GS noise and preventing false turn-on. Do not tie Pin 2 to Pins 3–7.

Is the body diode suitable for synchronous rectification in LLC converters?

No-the body diode is optimized for fast recovery (trr = 122 ns) but not for low forward voltage or bidirectional conduction. It is intended for freewheeling and clamping, not synchronous rectification. External Schottky or GaN FETs are recommended for SR paths in LLC topologies.

How is avalanche energy rating validated across production lots?

Each unit undergoes 100% production-level unclamped inductive switching (UIS) testing at E_AS = 778 mJ, per JEDEC JESD24-11. Test parameters include V_DD = 100 V, I_D = 6 A, and T_J = 25 °C start condition. No statistical sampling is used-full lot coverage ensures field reliability.

STHU32N65DM6AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 97mOhm @ 18.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52.6 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2211 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 320W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: HU3PAK

STHU32N65DM6AG FAQ

1.How can I place an order for STHU32N65DM6AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STHU32N65DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STHU32N65DM6AG reliable?

The price and inventory of STHU32N65DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STHU32N65DM6AG is usually 5 days.

3.What payment methods are accepted for STHU32N65DM6AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STHU32N65DM6AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STHU32N65DM6AG?

STHU32N65DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STHU32N65DM6AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STHU32N65DM6AG?

For technical support, including STHU32N65DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STHU32N65DM6AG requirements.

6.How does Aetrix verify that STHU32N65DM6AG is sourced from the original manufacturer or authorized distributors?

All STHU32N65DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STHU32N65DM6AG meets industry standards.

7.What is the process for return or replacement of STHU32N65DM6AG?

All STHU32N65DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with STHU32N65DM6AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STHU32N65DM6AG part is unused and in its original packaging.

Return procedure for STHU32N65DM6AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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