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STMicroelectronics STHU36N60DM6AG
- Part No.:
- STHU36N60DM6AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Datasheet:
-
STHU36N60DM6AG.pdf
- Description:
- AUTOMOTIVE-GRADE N-CHANNEL 600 V
- Quantity:
- Payment:
- Shipping:
Inventory:7,272
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Product details
Overview
STHU36N60DM6AG from STMicroelectronics is an AEC-Q101 qualified N-channel 600 V, 99 mΩ (max) MDmesh DM6 Power MOSFET in HU3PAK package, featuring fast-recovery body diode (trr = 110 ns @ Tj = 25 °C), low gate charge (Qg = 46 nC), and 100% avalanche tested (EAS = 630 mJ). It delivers high-efficiency switching in ZVS phase-shift converters and hard-switched bridge topologies.
For engineers reviewing the STHU36N60DM6AG datasheet, STHU36N60DM6AG pinout, STHU36N60DM6AG application, or STHU36N60DM6AG equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), Qrr minimization (0.5 µC), and automotive-grade reliability for on-board charger and traction inverter auxiliary stages.
Technical Context
This device implements ST's MDmesh DM6 silicon architecture optimized for high-voltage, high-frequency power conversion. Its fast-recovery body diode achieves trr = 110 ns and Qrr = 0.5 µC at 25 °C, with RDS(on) = 84 mΩ (typ.) at VGS = 10 V and ID = 14.5 A.
The HU3PAK package integrates a thermally enhanced drain-tab layout and dedicated driver source (pin 2) to reduce source inductance and improve switching control fidelity. Gate drive is optimized for low RG (1.5 Ω) and minimal Crss (2 pF), enabling robust operation under 100 V/ns dv/dt stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands DC bus voltages up to 480 V in ZVS converters with margin. |
| RDS(on) max | 99 mΩ - Ensures <1.7 W conduction loss at 29 A, TC = 25 °C. |
| Qg | 46 nC - Enables efficient 100–300 kHz switching with standard gate drivers. |
| trr / Qrr | 110 ns / 0.5 µC - Reduces diode recovery losses and EMI in bridge-leg commutation. |
| dv/dt ruggedness | 100 V/ns - Guarantees reliable operation during fast voltage transients in hard-switched topologies. |
| EAS | 630 mJ - Supports unclamped inductive switching without failure under defined SOA conditions. |
| RthJC | 0.6 °C/W - Enables >200 W continuous dissipation with moderate heatsinking. |
Pinout & Package
HU3PAK is a surface-mount, thermally enhanced 7-lead power package with exposed drain tab (TAB) for direct PCB thermal coupling. The layout separates power and signal paths: drain connects to TAB; gate (pin 1), driver source (pin 2), and power source (pins 3–7) are electrically isolated but share common source potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB (Drain) | Main power drain connection | Exposed copper pad for low-inductance, high-current drain path and thermal conduction to PCB copper. |
| 1 (Gate) | Control input | Standard gate terminal; driven by external controller with ≤±25 V rating. |
| 2 (Driver Source) | Reference for gate driver loop | Provides Kelvin connection to minimize source inductance in gate drive path, improving switching speed and stability. |
| 3–7 (Power Source) | Main source current return | Parallel source terminals reduce resistance and inductance for high-current source return (29 A continuous). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications including OBC auxiliary supplies and DC-DC converters. |
| Zener-protected gate | Integrated gate oxide protection enables robust handling of ±25 V gate-source transients without external clamping. |
| Extremely high dv/dt ruggedness | 100 V/ns rating ensures immunity to parasitic turn-on during high-slew-rate switching events. |
| Lower RDS(on) per area vs previous generation | Improves power density by ~25% over MDmesh D5, reducing footprint and thermal mass requirements. |
| 100% avalanche tested | Each unit undergoes single-pulse EAS stress test to 630 mJ, guaranteeing ruggedness in fault conditions. |
Applications
| On-Board Charger (OBC) Auxiliary Supply | ZVS Phase-Shift Full-Bridge Converter |
|---|---|
|
Use Scenario: High-efficiency 3.3 kW auxiliary DC-DC stage converting 400 V battery to 12 V for vehicle ECUs and infotainment. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous rectified full-bridge topology operating at 200 kHz. Use Value: Low Qrr (0.5 µC) and fast trr (110 ns) minimize dead-time losses and enable precise ZVS timing control. |
Use Scenario: Primary-side switching in server-grade 1 kW telecom power supply with soft-switching requirement. IC Role / Device Role / Timing Role: High-voltage leg switch in phase-shifted full-bridge, leveraging dv/dt ruggedness for reliable zero-voltage transition. Use Value: 100 V/ns dv/dt rating prevents spurious turn-on during rapid VDS transitions across resonant cycle. |
| Industrial Motor Drive Inverter Stage | High-Voltage UPS Inverter Module |
|
Use Scenario: 7.5 kW variable-frequency drive output stage powering HVAC compressors in commercial buildings. IC Role / Device Role / Timing Role: IGBT replacement in 600 V half-bridge configuration for improved efficiency and reduced gate drive complexity. Use Value: Integrated fast-recovery diode eliminates need for external anti-parallel SiC Schottky, simplifying BOM and layout. |
Use Scenario: 5 kVA online UPS inverter delivering clean 230 VAC from 400 VDC bus with <5% THD. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg, requiring high avalanche energy tolerance during grid fault recovery. Use Value: 630 mJ EAS rating supports safe operation during short-circuit events without desaturation protection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW36N60DM6 | TO-247-3L package; no driver source pin; RDS(on) = 99 mΩ (same); higher Ciss (2100 pF vs 1960 pF). | Lacks Kelvin source; unsuitable for ultra-high-frequency ZVS where source inductance dominates timing. | Select when board space allows TO-247 mounting and gate drive loop inductance is controlled externally. |
| IXFH36N60X3 | 600 V, 90 mΩ (typ.), 36 A; no AEC-Q101 qualification; trr = 130 ns; Qrr = 0.7 µC. | Higher Qrr increases recovery loss in phase-shift bridges; not validated for automotive temperature cycling. | Prefer for industrial SMPS where automotive qualification is unnecessary and lower RDS(on) justifies trade-off in diode performance. |
Compared with STW36N60DM6 and IXFH36N60X3, STHU36N60DM6AG uniquely combines AEC-Q101 compliance, driver-source Kelvin pin, and lowest Qrr in its class-making it optimal for automotive ZVS converters where reliability, timing precision, and EMI control are critical.
Availability
STHU36N60DM6AG is available at Aetrix Electronics and suitable for on-board chargers, ZVS phase-shift converters, and industrial motor drives requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.
Supply support for STHU36N60DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to the MDmesh DM6 family-engineered specifically for high-efficiency, high-frequency 600 V power conversion in automotive on-board chargers and industrial ZVS topologies.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The maximum continuous drain current (ID) is 18 A at TC = 100 °C, as specified in Table 1 of DS13040 Rev 3. This derating reflects thermal limits of the HU3PAK package and ensures safe operation within the SOA boundary at elevated temperatures.
Does the driver source (pin 2) require external connection?
Yes-pin 2 (driver source) must be connected directly to the gate driver's source reference node, separate from the main power source pins (3–7). This Kelvin connection reduces gate loop inductance and improves switching consistency, especially above 100 kHz.
How is avalanche ruggedness verified for this MOSFET?
Each unit undergoes 100% single-pulse avalanche testing at IAR = 6 A and EAS = 630 mJ (Tj = 25 °C), per test condition in Table 1. This qualifies the device for unclamped inductive switching in real-world fault scenarios without degradation.
Can STHU36N60DM6AG replace older MDmesh D5 devices in existing designs?
Yes-pin-compatible with STHU36N60D5 in HU3PAK, offering lower RDS(on) (99 mΩ vs 115 mΩ), faster trr (110 ns vs 140 ns), and improved Qrr (0.5 µC vs 0.8 µC). Layout reuse is possible, but gate drive strength should be verified due to reduced Qg (46 nC vs 54 nC).
STHU36N60DM6AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 99mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1960 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 210W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- HU3PAK
STHU36N60DM6AG FAQ
1.How can I place an order for STHU36N60DM6AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STHU36N60DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STHU36N60DM6AG reliable?
The price and inventory of STHU36N60DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STHU36N60DM6AG is usually 5 days.
3.What payment methods are accepted for STHU36N60DM6AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STHU36N60DM6AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STHU36N60DM6AG?
STHU36N60DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STHU36N60DM6AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STHU36N60DM6AG?
For technical support, including STHU36N60DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STHU36N60DM6AG requirements.
6.How does Aetrix verify that STHU36N60DM6AG is sourced from the original manufacturer or authorized distributors?
All STHU36N60DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STHU36N60DM6AG meets industry standards.
7.What is the process for return or replacement of STHU36N60DM6AG?
All STHU36N60DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with STHU36N60DM6AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STHU36N60DM6AG part is unused and in its original packaging.
Return procedure for STHU36N60DM6AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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