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STMicroelectronics STHU47N60DM6AG
- Part No.:
- STHU47N60DM6AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Datasheet:
-
STHU47N60DM6AG.pdf
- Description:
- AUTOMOTIVE-GRADE N-CHANNEL 600 V
- Quantity:
- Payment:
- Shipping:
Inventory:5,687
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Product details
Overview
STHU47N60DM6AG from STMicroelectronics is an AEC-Q101 qualified N-channel 600 V, 80 mΩ (max) high-voltage Power MOSFET in HU3PAK package, featuring fast-recovery body diode (trr = 115 ns @ 25 °C), 100% avalanche tested (EAS = 700 mJ), and Zener-protected gate. It delivers 36 A continuous drain current at TC = 25 °C and targets high-efficiency bridge topologies and ZVS phase-shift converters.
For engineers reviewing the STHU47N60DM6AG datasheet, STHU47N60DM6AG pinout, STHU47N60DM6AG application, or STHU47N60DM6AG equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (100 V/ns), Qrr (0.54 µC), and the dedicated driver source pin enabling low-inductance gate loop for high-speed switching in automotive and industrial power supplies.
Technical Context
This MDmesh DM6-series MOSFET integrates a fast-recovery intrinsic body diode with ultra-low Qrr (0.54 µC typ.) and trr (115 ns), optimized for hard-switched and resonant topologies requiring minimal reverse recovery loss. Its 70 mΩ typical RDS(on) at VGS = 10 V and 18 A, combined with low Ciss (2350 pF) and Qg (55 nC), enables high-frequency operation with reduced switching losses.
The HU3PAK package features a thermally enhanced exposed drain tab and three separate source terminals - one power source (pins 3–7), one driver source (pin 2), and integrated gate protection via on-chip Zener clamp. This layout minimizes source inductance in the gate drive path while maintaining robust 150 °C junction operation and 0.5 °C/W RthJC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands DC bus voltages up to 480 V in ZVS converters with 20% margin. |
| RDS(on) max | 80 mΩ - Ensures <1.3 W conduction loss at 36 A, critical for thermal management in compact designs. |
| Qrr | 0.54 µC - Reduces diode recovery loss by >50% vs prior MDmesh generations, improving efficiency in LLC and phase-shift full-bridge. |
| dv/dt ruggedness | 100 V/ns - Supports reliable operation in high-dV/dt environments without spurious turn-on, e.g., motor drives with long cable runs. |
| EAS | 700 mJ - Enables unclamped inductive switching in auxiliary power supplies without external snubbers. |
| Qg | 55 nC - Allows clean 100 kHz+ switching with standard gate drivers (e.g., STGAP2S), minimizing driver power dissipation. |
| TJ max | 150 °C - Rated for under-hood automotive applications per AEC-Q101, supporting extended lifetime at elevated ambient temperatures. |
Pinout & Package
HU3PAK is a surface-mount, thermally optimized package with an exposed copper drain tab (TAB) on the bottom side for direct PCB heatsinking. It integrates seven terminals: Gate (pin 1), Driver Source (pin 2), Power Source (pins 3–7), and Drain (TAB). The dual-source configuration separates high-current power return from low-noise gate drive return.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB (Drain) | Main power drain connection and thermal interface | Exposed copper pad soldered to large PCB copper area; provides 0.5 °C/W thermal resistance to case and primary current path. |
| 1 (Gate) | Control input terminal | Receives gate drive signal; protected by integrated Zener clamp to ±25 V, eliminating need for external gate protection. |
| 2 (Driver Source) | Dedicated gate drive return path | Isolates gate loop from high-di/dt power source currents, reducing noise-induced false triggering and improving switching consistency. |
| 3–7 (Power Source) | Main source return for load current | Parallel pins reduce source inductance and resistive drop; collectively handle 36 A continuous current with <0.5 mΩ total resistance. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications including engine control modules and DC/DC converters. |
| Fast-recovery body diode | trr = 115 ns and Qrr = 0.54 µC at TJ = 25 °C enable efficient synchronous rectification replacement in isolated topologies. |
| Lower RDS(on) per area | 70 mΩ typ. in HU3PAK delivers 22% lower conduction loss vs predecessor MDmesh DM2 in same footprint. |
| Low gate charge & capacitance | Qg = 55 nC, Ciss = 2350 pF, Crss = 2 pF - reduces Miller effect and enables faster, more controllable turn-off. |
| Zener-protected gate | Integrated 25 V Zener clamps gate-to-source voltage, eliminating external TVS and simplifying gate driver design. |
Applications
| Automotive On-Board Charger (OBC) | Industrial Phase-Shift Full-Bridge |
|---|---|
|
Use Scenario: High-efficiency AC/DC conversion stage in 6.6 kW OBCs operating at 100–200 kHz with soft-switching. IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetric half-bridge topology, handling 400 V DC bus and 36 A peak current. Use Value: Low Qrr and high dv/dt ruggedness suppress voltage spikes during zero-voltage switching transitions, reducing EMI filter size by 30%. |
Use Scenario: Output rectification and isolation in 3–5 kW telecom and server PSUs using phase-shift modulation. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET, replacing Schottky diodes to cut conduction loss at 12 V/300 A output. Use Value: Fast body diode recovery (trr = 115 ns) eliminates dead-time overlap loss, improving full-load efficiency by 1.2%. |
| EV Traction Inverter Auxiliary Supply | High-Voltage Solar Microinverter |
|
Use Scenario: Isolated 12 V/15 V auxiliary power supply fed from 800 V battery rail in traction inverters. IC Role / Device Role / Timing Role: Active clamp switch in active-clamp forward converter, switching at 250 kHz with 600 V blocking. Use Value: 100% avalanche rated (EAS = 700 mJ) withstands repetitive energy spikes during clamp reset, eliminating need for external snubber. |
Use Scenario: DC/AC inversion stage in single-phase 1.2 kW microinverters interfacing PV panels to grid. IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg, operating at 50 kHz with 600 V DC link and 12 A RMS output current. Use Value: Dual-source pinout (driver + power) maintains gate control integrity despite 1000 A/µs di/dt transients during freewheeling, preventing shoot-through. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | RDS(on) = 90 mΩ (max), Qrr = 1.1 µC, no driver source pin, TO-247 package | Lacks dedicated driver source; higher Qrr increases diode loss in ZVS converters | Prefer when cost sensitivity outweighs efficiency requirements and board space allows TO-247 mounting. |
| IXFH40N60X3 | RDS(on) = 85 mΩ (max), Qrr = 0.45 µC, no AEC-Q101 qualification, TO-247 package | Superior Qrr but unqualified for automotive; lacks Zener gate protection | Select only for industrial non-automotive use where gate protection is implemented externally. |
Compared with STW48N60M2 and IXFH40N60X3, STHU47N60DM6AG uniquely combines AEC-Q101 compliance, driver-source pin isolation, and lowest Qrr/RDS(on) product in HU3PAK - making it optimal for space-constrained, high-reliability automotive and industrial ZVS designs.
Availability
STHU47N60DM6AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial phase-shift full-bridge converters, EV auxiliary power supplies, and high-voltage solar microinverters requiring stable component supply across multi-year production cycles.
Supply support for STHU47N60DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to the MDmesh DM6 series - engineered specifically for high-efficiency, high-frequency hard-switched and resonant power conversion in automotive and industrial systems demanding low Qrr, high dv/dt immunity, and AEC-Q101 reliability.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STHU47N60DM6AG supports 22 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS13046 Rev 3. This derating reflects thermal limits of the HU3PAK package and ensures safe SOA operation within the 150 °C maximum junction temperature.
Does the driver source pin (pin 2) require external connection?
Yes - pin 2 (Driver Source) must be connected directly to the gate driver IC's source/return node, separate from the main power source (pins 3–7). This routing isolates the gate loop from high-di/dt power return paths, preventing oscillation and ensuring consistent switching timing.
How is avalanche ruggedness validated for this MOSFET?
STHU47N60DM6AG undergoes 100% production-level unclamped inductive switching (UIS) testing per JEDEC JESD24-1. Each unit is stressed with IAR = 7 A and EAS = 700 mJ at TJ = 25 °C, guaranteeing single-pulse avalanche capability without parameter shift or failure.
Can this MOSFET replace older MDmesh devices without layout changes?
No - the HU3PAK footprint differs significantly from TO-220 or D²PAK packages. While electrically compatible in many circuits, mechanical redesign is required: the exposed drain TAB must be soldered to a dedicated thermal pad, and the 7-pin layout mandates new PCB routing for driver source separation.
STHU47N60DM6AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2350 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- HU3PAK
STHU47N60DM6AG FAQ
1.How can I place an order for STHU47N60DM6AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STHU47N60DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STHU47N60DM6AG reliable?
The price and inventory of STHU47N60DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STHU47N60DM6AG is usually 5 days.
3.What payment methods are accepted for STHU47N60DM6AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STHU47N60DM6AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STHU47N60DM6AG?
STHU47N60DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STHU47N60DM6AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STHU47N60DM6AG?
For technical support, including STHU47N60DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STHU47N60DM6AG requirements.
6.How does Aetrix verify that STHU47N60DM6AG is sourced from the original manufacturer or authorized distributors?
All STHU47N60DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STHU47N60DM6AG meets industry standards.
7.What is the process for return or replacement of STHU47N60DM6AG?
All STHU47N60DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with STHU47N60DM6AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STHU47N60DM6AG part is unused and in its original packaging.
Return procedure for STHU47N60DM6AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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