STMicroelectronics STI10N62K3

Overview

STI10N62K3 from STMicroelectronics is an N-channel 620 V, 700 mΩ typ., 8.4 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It delivers 12 V/ns dv/dt capability, 220 mJ single-pulse avalanche energy, and Zener-protected gate.

For engineers reviewing the STI10N62K3 datasheet, STI10N62K3 pinout, STI10N62K3 application, or STI10N62K3 equivalent, key selection criteria include its 620 V breakdown voltage, 700 mΩ on-resistance at 10 V gate drive, 42 nC total gate charge, and TO-220FP insulated package with 2.5 kV RMS isolation rating.

Technical Context

This MOSFET employs ST's MDmesh K3 vertical structure optimized for high-voltage hard-switching topologies. Its low Crss (16 pF) and Co(er) (38 pF) minimize Miller effect and switching losses, while the intrinsic body diode exhibits 320 ns trr and 2 µC Qrr at 25 °C - critical for ZVS/ZCS resonant converters.

The device integrates a monolithic Zener clamp between gate and source, enabling robust ESD tolerance (2.5 kV HBM) and reliable operation under transient overvoltage conditions. Thermal resistance RthJC of 4.17 °C/W supports high-power density designs when mounted on heatsinks.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated plastic case with integral heatsink tab, 3-pin vertical lead frame, creepage/clearance compliant for 2.5 kV RMS isolation. Mounting hole Ø3.0–3.2 mm; L3 = 28.6–30.6 mm; H = 10.0–10.4 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF10N62K3, STI10N62K3 offers identical electrical performance but reflects obsolete ordering nomenclature; versus IPP65R099CFD7, it trades higher R_DS(on) for lower Q_g, reduced Crss, and superior dv/dt immunity - making it more suitable for high-noise industrial environments.

Availability

STI10N62K3 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STI10N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This device belongs to the MDmesh K3 high-voltage power MOSFET product line, engineered specifically for efficiency-critical offline power conversion in industrial, computing, and lighting applications.

FAQ

Is STI10N62K3 pin-compatible with STF10N62K3?

Yes - STI10N62K3 and STF10N62K3 share identical TO-220FP package dimensions, pinout (G-D-S), thermal characteristics, and electrical specifications per DS6237 Rev 5. The STI prefix was discontinued in April 2026, but existing units are fully interchangeable in layout and circuit design.

What is the maximum recommended gate resistor for 100 kHz switching?

A 4.7 Ω gate resistor is validated in the datasheet for 100 kHz operation (td(on)/td(off) measured at RG = 4.7 Ω). For faster switching, use 2.2–3.3 Ω with adequate gate driver peak current (>2 A); for EMI reduction, increase to 10–15 Ω while monitoring rise/fall times and switching loss trade-offs.

Can STI10N62K3 replace STP10N62K3 in existing designs?

No - STP10N62K3 uses TO-220 (non-insulated) package with exposed drain tab, while STI10N62K3 uses TO-220FP (insulated) with 2.5 kV isolation. Mechanical mounting, heatsink interface, and creepage requirements differ significantly; PCB layout and safety certification must be revalidated.

Does the body diode support synchronous rectification?

The intrinsic body diode has trr = 320 ns and Qrr = 2 µC at 25 °C, which is acceptable for low-frequency (<100 kHz) synchronous rectification in flyback or forward converters. However, its softness factor and IRRM (13 A) limit suitability for high-frequency ZVS/ZCS topologies where dedicated Schottky or GaN-based solutions are preferred.