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STMicroelectronics STI10NM60N
- Part No.:
- STI10NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STI10NM60N.pdf
- Description:
- MOSFET N-CH 600V 10A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:970
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Product details
Overview
STD10NM60N from STMicroelectronics is an N-channel 600 V, 530 mΩ typ. (550 mΩ max), 10 A MDmesh™ II Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency hard-switching and resonant converters. It features 100% avalanche tested ruggedness, low gate charge (19 nC), and low input capacitance (540 pF), enabling fast switching in PFC, SMPS, and industrial motor drives.
For engineers reviewing the STD10NM60N datasheet, STD10NM60N pinout, STD10NM60N application, or STD10NM60N equivalent, key selection criteria include its 600 V breakdown voltage, 1.79 °C/W junction-to-case thermal resistance, 200 mJ single-pulse avalanche energy, and DPAK footprint compatibility with high-power density board layouts.
Technical Context
This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize RDS(on) and gate charge simultaneously-achieving 530 mΩ typ. at VGS = 10 V and ID = 4 A while maintaining 600 V V(BR)DSS. Its low Ciss/Coss ratio (540 pF / 44 pF) supports ZVS operation in LLC topologies.
The integrated body diode exhibits 250 ns reverse recovery time (TJ = 25 °C) and 2.12 µC Qrr, with rated ISD = 8 A continuous and 32 A pulsed, enabling synchronous rectification replacement in medium-frequency flyback and forward converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 600 V - Withstands DC bus voltages up to 400 VAC line-fed systems with margin for transients. |
| RDS(on) max | 550 mΩ - Limits conduction loss to ≤2.2 W at 10 A DC, critical for thermal management in sealed enclosures. |
| Qg | 19 nC - Enables <50 ns turn-on delay with 4.7 Ω gate resistor, reducing switching loss in 100–300 kHz converters. |
| EAS | 200 mJ - Sustains unclamped inductive switching events without failure, supporting robust flyback snubberless designs. |
| RthJC | 1.79 °C/W - Allows 70 W power dissipation at TC = 25 °C; requires ≥25 mm² copper pour for 50 °C rise at full load. |
| ID @ TC = 100 °C | 5 A - Defines usable current derating in thermally constrained industrial control modules. |
| Ciss | 540 pF - Sets Miller plateau duration and gate drive power requirement in high-side configurations. |
Pinout & Package
DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; standard 3-pin surface-mount outline (type C3/E), compatible with IPC-7351B footprint FP_0068772_34.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Pin 2) | Drain (D) | Primary heat path to PCB copper; electrically connected to drain node-must be isolated from other potentials. |
| Pin 1 | Gate (G) | High-impedance MOSFET control terminal; requires <6 Ω series gate resistor to damp ringing from 1.2 pF Crss. |
| Pin 3 | Source (S) | Reference node for gate drive; connects to power ground plane; carries full load current and diode recovery current. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg figure-of-merit by 35% vs. first-gen devices, enabling higher efficiency at 200 kHz. |
| 100% avalanche tested | Guarantees single-pulse EAS ≥ 200 mJ across production lot-no screening waivers required for industrial surge immunity. |
| Low Coss (44 pF) | Minimizes capacitive turn-off loss and improves light-load efficiency in QR flyback controllers. |
| Fast body diode (trr = 250 ns) | Reduces diode conduction loss and EMI in discontinuous conduction mode (DCM) PFC stages. |
| ECOPACK® compliant | Meets RoHS 2011/65/EU and REACH SVHC requirements; halogen-free molding compound per IEC 61249-2-21. |
Applications
| Industrial Switch-Mode Power Supplies | Server & Telecom AC-DC Front Ends |
|---|---|
|
Use Scenario: 1 kW active clamp forward converter operating at 200 kHz with 400 VDC input. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 10 A peak drain current and 600 V blocking. Use Value: Low Qg (19 nC) and RDS(on) (550 mΩ) reduce total switching + conduction loss to <4.5 W, enabling passive cooling. |
Use Scenario: 3 kW telecom rectifier with dual-phase interleaved PFC stage. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), switching at 100 kHz with 10 A RMS current. Use Value: 200 mJ EAS withstands line surges per IEC 61000-4-5 Level 4, eliminating need for external clamping. |
| Motor Drive Inverter Stages | LED Driver High-Voltage Buck Converters |
|
Use Scenario: 750 W three-phase BLDC inverter with 600 V DC bus and 15 kHz PWM. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 6-pack half-bridge module configuration. Use Value: 32 A pulsed drain current (IDM) supports 3× motor stall current without SOA violation. |
Use Scenario: 200 W constant-current LED driver for street lighting, operating from 305 VAC mains. IC Role / Device Role / Timing Role: Primary switch in high-side buck topology with 600 V rating and 10 A peak current. Use Value: Low Ciss/Crss ratio (540 pF / 1.2 pF) ensures stable gate drive under 10 kV/µs dv/dt stress during dimming transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NM60N | TO-220 package; identical RDS(on), Qg, and V(BR)DSS; RthJC = 1.0 °C/W (lower thermal resistance). | Requires through-hole mounting and heatsink; unsuitable for compact SMT-only designs. | Select when board-level thermal budget allows discrete heatsinking and manual assembly is acceptable. |
| IPP60R099C7 | 650 V, 99 mΩ typ., 10 A; CoolMOS™ C7 technology; Qg = 32 nC; higher conduction efficiency but slower switching. | Better for <100 kHz applications where RDS(on) dominates loss; less suitable for >200 kHz ZVS designs. | Prefer for high-power, low-frequency SMPS where conduction loss exceeds switching loss. |
Compared with STP10NM60N, STD10NM60N trades 0.79 °C/W higher junction-to-case thermal resistance for SMT manufacturability and board space savings; versus IPP60R099C7, it offers lower gate charge and faster switching at the cost of higher RDS(on), making it optimal for mid-frequency, space-constrained converters.
Availability
STD10NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, motor drive inverters, and LED driver buck converters requiring stable component supply and long-term obsolescence management.
Supply support for STD10NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.
STD10NM60N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in compact, thermally demanding power conversion systems.
FAQ
What is the maximum continuous drain current at case temperature of 100 °C?
The STD10NM60N supports 5 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS11416 Rev 2. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA curve up to 10 ms pulse width.
Does this MOSFET include an integrated body diode, and what are its key recovery parameters?
Yes, STD10NM60N features an integrated source-drain diode rated for 8 A continuous and 32 A pulsed current. At TJ = 25 °C, its reverse recovery time is 250 ns with 2.12 µC Qrr and 17 A IRRM, measured under ISD = 8 A, di/dt = 100 A/µs, and VDD = 60 V conditions.
Is the STD10NM60N suitable for avalanche-rated circuit protection without external snubbers?
Yes-every unit undergoes 100% production avalanche testing to guarantee minimum 200 mJ single-pulse energy handling (EAS). This enables reliable operation in unclamped inductive switching, such as relay driving or transformer reset, without added snubber components.
What is the recommended gate resistor value for hard-switching at 200 kHz?
A 4.7 Ω gate resistor is validated in the datasheet (Table 5 test conditions) for VDD = 300 V, ID = 4 A, yielding td(on) = 10 ns and tf = 15 ns. For 200 kHz hard-switching, this value balances switching speed against gate oscillation risk given the device's 6 Ω intrinsic gate resistance and 1.2 pF Crss.
STI10NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262 (I2PAK)
STI10NM60N FAQ
1.How can I place an order for STI10NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STI10NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STI10NM60N reliable?
The price and inventory of STI10NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI10NM60N is usually 5 days.
3.What payment methods are accepted for STI10NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI10NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STI10NM60N?
STI10NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STI10NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STI10NM60N?
For technical support, including STI10NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI10NM60N requirements.
6.How does Aetrix verify that STI10NM60N is sourced from the original manufacturer or authorized distributors?
All STI10NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI10NM60N meets industry standards.
7.What is the process for return or replacement of STI10NM60N?
All STI10NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STI10NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STI10NM60N part is unused and in its original packaging.
Return procedure for STI10NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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