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STMicroelectronics STI11NM80
- Part No.:
- STI11NM80
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STI11NM80.pdf
- Description:
- MOSFET N-CH 800V 11A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,712
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Product details
Overview
STI11NM80 from STMicroelectronics is an N-channel 800 V, 380 mΩ typ., 11 A MDmesh Power MOSFET in I²PAK package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 400 mΩ max. RDS(on), 30 V/ns peak dv/dt capability, and 400 mJ single-pulse avalanche energy - enabling robust operation in hard-switched flyback and resonant converters.
For engineers reviewing the STI11NM80 datasheet, STI11NM80 pinout, STI11NM80 application, or STI11NM80 equivalent, key selection criteria include its 800 V VDS, low 50 nC total gate charge, 1630 pF input capacitance, 100% avalanche-tested reliability, and thermal resistance of 0.83 °C/W (junction-to-case) in I²PAK.
Technical Context
This device leverages ST's MDmesh technology - combining multiple drain process with PowerMESH horizontal layout - to achieve ultra-low on-resistance while maintaining high voltage rating and fast switching. Its strip-based cell structure reduces parasitic capacitances and improves dynamic performance over conventional planar MOSFETs.
The STI11NM80 features a built-in body diode with 612 ns reverse recovery time (TJ = 25 °C) and 7.22 µC Qrr, optimized for snubberless operation in inductive load switching. Gate threshold voltage is tightly specified at 3–5 V, supporting direct drive from standard 10 V gate drivers without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - supports primary-side switching in universal-input AC-DC supplies up to 400 VAC mains with safety margin. |
| RDS(on) max | 400 mΩ - limits conduction loss to ≤4.84 W at 11 A DC, enabling thermally constrained designs. |
| Qg | 50 nC - enables efficient 100 kHz+ operation with moderate gate driver power (e.g., 1 W @ 100 kHz, 10 V swing). |
| Ciss | 1630 pF - reduces Miller effect during turn-on, improving noise immunity in high-dv/dt environments. |
| EAS | 400 mJ - withstands unclamped inductive switching events without failure, eliminating need for external clamping in many topologies. |
| RthJC | 0.83 °C/W - allows 150 °C junction operation with ≤125 W dissipation when mounted on heatsink, supporting compact thermal design. |
| ID (cont, TC=100°C) | 8 A - defines usable current in real-world PCB-mounted conditions with ambient heatsinking. |
Pinout & Package
I²PAK (TO-220AB variant) package with isolated tab; thermally enhanced plastic housing rated for 2.5 kV RMS insulation between leads and heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Pin 2, Tab) | Drain | Main high-voltage power terminal; electrically connected to metal tab - requires insulating washer when mounted to heatsink. |
| G (Pin 1) | Gate | Control input; low 2.7 Ω gate input resistance minimizes ringing and simplifies RC snubber design. |
| S (Pin 3) | Source | Power return path and gate reference; low-inductance connection critical for stable switching behavior. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ super-junction architecture | Enables 800 V rating with 380 mΩ typ. RDS(on), reducing conduction loss by >35% vs. legacy planar MOSFETs. |
| 100% avalanche tested | Guarantees ruggedness under repetitive unclamped inductive switching - eliminates qualification testing overhead for OEMs. |
| Low Coss (750 pF) & Crss (30 pF) | Minimizes voltage-dependent capacitance effects, improving ZVS compatibility and reducing EMI generation. |
| High dv/dt immunity (30 V/ns) | Prevents false turn-on in high-noise bridge configurations without requiring negative gate bias or active Miller clamp. |
| Optimized body diode (Qrr = 7.22 µC) | Reduces reverse recovery loss and associated shoot-through risk in half-bridge and LLC resonant topologies. |
Applications
| Industrial Motor Drives | Server & Telecom PSU |
|---|---|
Use Scenario: Primary-side switch in 1–3 kW isolated DC-DC converters for 48 V intermediate bus systems. IC Role / Device Role / Timing Role: High-side switching element in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: Low Qg and Ciss reduce gate drive losses; 400 mJ EAS ensures reliability during output short-circuit events. |
Use Scenario: Active clamp forward or LLC resonant converter in 80 PLUS Titanium-certified server PSUs. IC Role / Device Role / Timing Role: Synchronous rectifier control switch or primary-side HV FET in high-efficiency AC-DC front-end. Use Value: 800 V rating accommodates 380 VDC bus transients; low RDS(on) cuts conduction loss at partial load. |
| EV Onboard Charger (OBC) | Industrial UPS Systems |
Use Scenario: Boost PFC stage in bi-directional OBC handling 6.6 kW AC input (230 VAC). IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 65–100 kHz. Use Value: High dv/dt immunity prevents spurious turn-on during fast line transients; tight VGS(th) tolerance ensures consistent turn-on timing. |
Use Scenario: Inverter stage in 5–10 kVA double-conversion UPS supplying critical loads. IC Role / Device Role / Timing Role: Output bridge switch handling 400 VDC bus with 50/60 Hz fundamental and harmonic content. Use Value: Robust avalanche capability absorbs regenerative energy during grid faults; TO-220FP variant offers creepage/clearance compliance for safety certification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP11NM80 | Same die, TO-220 package; RthJC = 0.83 °C/W but higher RthJA (50 °C/W vs. I²PAK's 30 °C/W on FR-4). | Limited to lower-power (<80 W) or forced-air-cooled designs due to reduced thermal efficiency on PCB. | Select when cost-sensitive, non-isolated mounting, or legacy TO-220 footprint required. |
| STW11NM80 | Same die, TO-247 package; RthJC = 0.83 °C/W, but larger footprint and higher gate inductance (slower switching edge control). | Better suited for high-current, low-frequency (<50 kHz) inverters where thermal mass outweighs switching speed needs. | Select when maximum heatsink interface area and highest surge current (44 A pulsed) are prioritized over layout density. |
Compared with STP11NM80 and STW11NM80, the STI11NM80 balances thermal performance, switching speed, and board space - making it optimal for medium-power, high-frequency SMPS where I²PAK's isolation and thermal metrics deliver best-in-class power density.
Availability
STI11NM80 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, EV onboard chargers, and UPS systems requiring stable component supply across multi-year production cycles.
Supply support for STI11NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.
The STI11NM80 belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–900 V industrial and computing power conversion applications.
FAQ
Is STI11NM80 suitable for zero-voltage switching (ZVS) topologies?
Yes. With 750 pF Coss and 30 pF Crss, the STI11NM80 exhibits low output capacitance and minimal Miller feedback, enabling reliable ZVS operation in LLC resonant converters up to 300 kHz. Its 30 V/ns dv/dt rating ensures stability during soft-switching transitions without gate oscillation.
What is the maximum recommended gate resistor value for reliable switching?
A gate resistor of 4.7 Ω is validated per datasheet test conditions (td(on)/td(off) measurements). For 100 kHz operation with 10 V gate drive, values between 2.2 Ω and 10 Ω balance switching loss and EMI; exceeding 15 Ω risks incomplete turn-on due to 2.7 Ω intrinsic gate resistance interacting with stray inductance.
Does STI11NM80 require a negative gate voltage for safe operation?
No. The device's 30 V/ns dv/dt immunity and 3–5 V VGS(th) range allow stable operation with 0 V to +10 V or +12 V gate drive only. Negative bias is unnecessary unless operating in extreme noise environments (>50 V/ns) or synchronous rectification with cross-conduction risk.
Can STI11NM80 replace STP11NM80 in existing TO-220 layouts?
No - STI11NM80 uses I²PAK (TO-220AB) with different pinout (G-D-S vs. G-S-D), tab isolation, and footprint. Direct replacement requires PCB redesign. However, identical electrical specs and thermal RthJC make it a drop-in functional upgrade when board space permits the wider I²PAK outline and insulated mounting.
STI11NM80 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43.6 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1630 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK (TO-262)
STI11NM80 FAQ
1.How can I place an order for STI11NM80 through Aetrix?
Please submit a Request for Quotation (RFQ) for STI11NM80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STI11NM80 reliable?
The price and inventory of STI11NM80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI11NM80 is usually 5 days.
3.What payment methods are accepted for STI11NM80?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI11NM80 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STI11NM80?
STI11NM80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STI11NM80 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STI11NM80?
For technical support, including STI11NM80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI11NM80 requirements.
6.How does Aetrix verify that STI11NM80 is sourced from the original manufacturer or authorized distributors?
All STI11NM80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI11NM80 meets industry standards.
7.What is the process for return or replacement of STI11NM80?
All STI11NM80 units undergo pre-shipment inspection (PSI). If there is an issue with STI11NM80, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STI11NM80 part is unused and in its original packaging.
Return procedure for STI11NM80:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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