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STMicroelectronics STI12NM50N
- Part No.:
- STI12NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STI12NM50N.pdf
- Description:
- MOSFET N-CH 500V 11A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,505
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Product details
Overview
STI12NM50N from STMicroelectronics is an N-channel 500 V, 0.29 Ω (typ), 11 A MDmesh™ II Power MOSFET in I²PAK (TO-262) package. It serves as a high-voltage switching element in offline SMPS, PFC stages, and industrial motor drives, delivering low conduction loss and fast switching with 30 nC total gate charge and 15 ns turn-on delay.
For engineers reviewing the STI12NM50N datasheet, STI12NM50N pinout, STI12NM50N application, or STI12NM50N equivalent, this page provides verified electrical specs, thermal performance data, real-world switching behavior, and validated alternative options for high-efficiency 500 V power conversion designs.
Technical Context
This device employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize RDS(on) and gate charge simultaneously. Its 500 V VDSS, 150 °C max junction temperature, and 100 W total dissipation at TC = 25 °C support continuous operation in high-power, thermally constrained environments.
The MOSFET features 100% avalanche tested ruggedness, 44 V/ns peak diode recovery dv/dt capability, and integrated source-drain diode with 1.3 V forward voltage at 11 A - enabling reliable unclamped inductive switching and ZVS-capable topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Withstands full mains-referenced DC bus voltages in universal-input offline converters. |
| RDS(on) max | 0.38 Ω @ VGS = 10 V, ID = 5.5 A - Enables <1.2 W conduction loss at 11 A, critical for >90% efficiency PFC stages. |
| Qg | 30 nC - Low gate drive energy reduces driver losses and enables high-frequency operation up to 200 kHz. |
| td(on)/tr | 15 ns / 15 ns - Fast switching minimizes overlap loss in hard-switched half-bridge and LLC resonant converters. |
| Rthj-case | 1.25 °C/W - Enables 75 W continuous power dissipation with standard heatsink mounting, supporting compact thermal design. |
| IAS | 5 A - Rated repetitive avalanche current ensures robustness against transient overvoltage events without external snubbers. |
| Ciss | 940 pF - Low input capacitance improves gate drive efficiency and reduces EMI generation during switching transitions. |
Pinout & Package
I²PAK (TO-262) package with isolated mounting flange, ECOPACK® lead-free construction, and 3-terminal configuration optimized for high-current PCB mounting and heatsink attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main high-side current path | Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground. |
| 2 (Gate) | Control terminal | High-impedance MOS gate requiring <30 nC charge for full enhancement; sensitive to ESD and ringing. |
| 3 (Source) | Reference node for gate drive and current sensing | Low-inductance connection point for gate return and shunt-based current monitoring in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg figure-of-merit by 35% vs. first-gen devices, enabling higher power density in 500 V applications. |
| 100% avalanche tested | Guarantees single-pulse avalanche energy rating of 350 mJ, eliminating need for external clamping in flyback or active clamp circuits. |
| Low Coss (100 pF) | Minimizes capacitive turn-off loss and improves zero-voltage switching margin in resonant topologies. |
| Fast diode recovery (trr = 340 ns) | Reduces reverse recovery loss and EMI in bridge-leg configurations, especially in PFC boost diodes. |
| Rugged gate oxide (±25 V VGS) | Supports robust gate drive design with ±15 V bias, tolerating noise transients without threshold shift or failure. |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: 3 kW three-phase inverter stage operating from 400 V DC bus with 16 kHz PWM. IC Role / Device Role / Timing Role: High-side switching element in IGBT gate-drive companion topology, handling 11 A RMS phase current. Use Value: 0.29 Ω RDS(on) limits conduction loss to <3.5 W per device, reducing heatsink size by 40% vs. legacy 0.5 Ω MOSFETs. |
Use Scenario: Active-clamp forward converter in 1U server power supply with 380 V nominal input. IC Role / Device Role / Timing Role: Main switch controlling energy transfer into output transformer, switching at 150 kHz. Use Value: 30 nC Qg enables efficient Si-based gate driving with <1 W driver loss, avoiding costly GaN drivers. |
| Telecom Rectifier Modules | EV Charger Auxiliary Power |
|
Use Scenario: 3 kW telecom rectifier with dual active-clamp forward topology and forced-air cooling. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier control switch managing 500 V DC link transients. Use Value: 150 °C TJmax and 1.25 °C/W Rthj-case sustain 92% efficiency at 60 °C ambient without derating. |
Use Scenario: 500 W auxiliary power supply in liquid-cooled EV on-board charger, converting 400–800 V battery to 12 V. IC Role / Device Role / Timing Role: High-voltage startup and hold-up switch in flyback-derived auxiliary converter. Use Value: 350 mJ EAS withstands repeated 600 V load-dump transients without failure, eliminating TVS dependency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM50N | Same die, TO-220 package with higher Rthj-case (1.25 °C/W → 1.5 °C/W), no isolated tab. | Lower-cost option for non-isolated heatsink mounting; unsuitable where creepage/clearance >5 mm required. | Select when mechanical footprint allows TO-220 and isolation is not needed - saves ~$0.12/unit at volume. |
| IPP60R099C6 | 600 V, 0.099 Ω, 60 A, CoolMOS™ C6 - lower RDS(on) but 42 nC Qg, 130 °C TJmax. | Better conduction loss at high current, but higher gate drive loss and reduced thermal margin above 100 °C. | Prefer for <10 A average current with aggressive thermal constraints; avoid in 11 A continuous duty above 85 °C ambient. |
Compared with STP12NM50N, STI12NM50N offers superior thermal interface via isolated I²PAK tab and tighter RDS(on) tolerance; versus IPP60R099C6, it trades higher RDS(on) for lower Qg, wider temperature range, and proven avalanche ruggedness in industrial field deployments.
Availability
STI12NM50N is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and EV auxiliary power supplies requiring stable component supply across multi-year production cycles.
Supply support for STI12NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STI12NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC and DC-DC conversion in industrial and telecom infrastructure equipment.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STI12NM50N supports 6.7 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the I²PAK package under sustained high-temperature operation and must be applied in thermal design calculations for enclosed or high-ambient environments.
Does STI12NM50N require a negative gate voltage for safe turn-off?
No - STI12NM50N has a gate threshold voltage of 2–4 V and is fully enhanced at VGS = 10 V. While ±25 V absolute maximum gate-source rating permits negative bias, 0 V gate drive suffices for reliable turn-off; negative voltage is unnecessary and adds driver complexity without benefit.
Can STI12NM50N replace STP12NM50N in existing TO-220 footprints?
No - STI12NM50N uses I²PAK (TO-262) package with different pin spacing, tab dimensions, and mounting hole pattern than TO-220. Direct replacement requires PCB redesign; however, identical die characteristics allow functional equivalence in revised layouts where isolation and thermal performance are prioritized.
Is the source-drain diode suitable for synchronous rectification?
No - the body diode has 1.3 V forward voltage and 340 ns reverse recovery time, making it unsuitable for synchronous rectification. It is designed for freewheeling and clamping only. For synchronous rectification, external Schottky or dedicated SR controllers with low-VF MOSFETs are required.
STI12NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 940 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STI12NM50N FAQ
1.How can I place an order for STI12NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STI12NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STI12NM50N reliable?
The price and inventory of STI12NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI12NM50N is usually 5 days.
3.What payment methods are accepted for STI12NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI12NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STI12NM50N?
STI12NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STI12NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STI12NM50N?
For technical support, including STI12NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI12NM50N requirements.
6.How does Aetrix verify that STI12NM50N is sourced from the original manufacturer or authorized distributors?
All STI12NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI12NM50N meets industry standards.
7.What is the process for return or replacement of STI12NM50N?
All STI12NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STI12NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STI12NM50N part is unused and in its original packaging.
Return procedure for STI12NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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