STMicroelectronics STI14NM50N

Overview

STI14NM50N from STMicroelectronics is an N-channel 500 V, 285 mΩ typ. (320 mΩ max.), 12 A MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters requiring low gate charge (27 nC) and robust avalanche capability (172 mJ). It operates with 10 V gate drive and integrates a fast-recovery source-drain diode (trr = 252 ns).

For engineers reviewing the STI14NM50N datasheet, STI14NM50N pinout, STI14NM50N application, or STI14NM50N equivalent, key selection factors include its 500 V V_DS, 285 mΩ R_DS(on) at 10 V, 27 nC Q_g, 15 V/ns dv/dt immunity, and 100% avalanche-tested reliability in hard-switching topologies.

Technical Context

This device implements ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its low C_iss (816 pF), C_oss (60 pF), and Cr_ss (3 pF) enable high-frequency operation up to several hundred kHz in resonant and hard-switched SMPS.

The integrated body diode features soft recovery (Q_rr = 2.8 µC, I_RRM = 22 A) and is rated for 12 A continuous source-drain current, supporting synchronous rectification and bidirectional energy transfer in LLC and PFC stages.

Key Specifications

Pinout & Package

STI14NM50N is housed in a TO-220FP (Type B) package with insulated tab, offering creepage/clearance compliance for reinforced isolation in AC/DC adapters and offline SMPS. The plastic body isolates the drain-connected tab from mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Compared with STP14NM50N, STI14NM50N trades 3.6× higher R_thJC for reinforced isolation-essential for double-insulated AC/DC adapters-while matching all electrical specs. Against IPP60R099C7, it delivers lower Q_g and better 400 V efficiency despite lower V_DS, making it optimal for cost- and thermally constrained 500 V designs.

Availability

STI14NM50N is available at Aetrix Electronics and suitable for server power supplies, industrial AC/DC adapters, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and certified ECOPACK® compliance.

Supply support for STI14NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STI14NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power conversion in PFC, SMPS, and DC/DC applications up to 500 V.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current for STI14NM50N at T_C = 100 °C is 8 A, as specified in Table 1 of DS6618 Rev 8. This rating reflects thermal derating due to junction-to-case thermal resistance (5 °C/W) and maximum allowable junction temperature of 150 °C. Operation above this current requires forced cooling or pulse-width limitation.

Does STI14NM50N have an integrated body diode, and what are its key recovery parameters?

Yes, STI14NM50N includes a monolithic source-drain body diode rated for 12 A continuous and 48 A pulsed current. Key recovery parameters at T_J = 25 °C are reverse recovery time t_rr = 252 ns, reverse recovery charge Q_rr = 2.8 µC, and peak reverse recovery current I_RRM = 22 A, measured under ISD = 12 A, di/dt = 100 A/μs, and V_DD = 60 V conditions.

Is the TO-220FP package electrically insulated, and how does that affect heatsink mounting?

Yes, the TO-220FP (Type B) package features an electrically insulated metal tab. The drain (D) is connected to the tab, but the plastic body provides reinforced insulation between the tab and PCB/heatsink. This eliminates the need for insulating pads or shoulder washers when mounting to a grounded heatsink-reducing thermal resistance and assembly complexity in Class II AC/DC designs.

How does the 15 V/ns dv/dt rating improve system reliability in bridge configurations?

The 15 V/ns dv/dt immunity rating means STI14NM50N can withstand rapid drain voltage transients without unintended turn-on via capacitive coupling through Cr_ss. In half-bridge or full-bridge topologies, this prevents shoot-through failures during high di/dt switching events, especially at high bus voltages-enabling robust operation without gate-source clamping zeners or negative turn-off bias circuits.