STMicroelectronics STI150N10F7

Overview

STI150N10F7 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in I²PAK (TO-262) package, rated for 100 V drain-source voltage, 0.0036 Ω typ. R_DS(on) at V_GS = 10 V and I_D = 55 A, 110 A continuous drain current, and 250 W total power dissipation. It employs STripFET™ F7 trench-gate technology for high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the STI150N10F7 datasheet, STI150N10F7 pinout, STI150N10F7 application, or STI150N10F7 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Crss/Ciss ratio for EMI resilience, single-pulse avalanche energy (495 mJ), thermal resistance (0.6 °C/W j-case), and source-drain diode recovery performance (Q_rr = 165 nC, t_rr = 70 ns).

Technical Context

This MOSFET uses a refined STripFET™ F7 trench-gate structure that simultaneously minimizes R_DS(on) and gate charge (Q_g = 117 nC), while achieving a low Crss/Ciss ratio of ~0.008 to suppress EMI during fast switching. Its 100 V V_DS rating and 495 mJ EAS support robust unclamped inductive switching in industrial H-bridges.

The device features a co-packaged intrinsic body diode with 110 A continuous forward current capability, 1.2 V forward voltage at 110 A, and tightly controlled reverse recovery (t_rr = 70 ns, Q_rr = 165 nC) - enabling synchronous rectification in high-frequency SMPS without external Schottky supplementation.

Key Specifications

Pinout & Package

The STI150N10F7 is housed in an I²PAK (TO-262) package with three leads and an electrically connected tab (Drain). The package provides low thermal resistance and mechanical robustness for surface-mount or through-hole mounting on PCBs with copper pour heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with STP150N10F7, the STI150N10F7 offers 0.15 °C/W lower thermal resistance for same-die performance in space-constrained I²PAK layouts; versus IPP120N10N3G, it trades 12 nC higher Q_g for 115 mJ greater EAS - prioritizing ruggedness over ultra-high frequency.

Availability

STI150N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STI150N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ F7 series targets high-efficiency power conversion, delivering best-in-class R_DS(on) × Q_g figure-of-merit for 80–150 V MOSFETs used in motor control, UPS, and renewable energy systems.

FAQ

What is the maximum safe operating temperature for STI150N10F7?

The STI150N10F7 has a specified junction temperature range of –55 °C to +175 °C. For reliable long-term operation, ST recommends limiting steady-state T_j to ≤150 °C under continuous load. This requires maintaining case temperature ≤75 °C when dissipating 250 W, given its 0.6 °C/W R_thj-case. Derating curves in Figure 2 confirm 110 A current remains valid up to T_C = 100 °C.

Does STI150N10F7 require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω to 22 Ω) is required to dampen ringing and prevent parasitic oscillation during switching. The datasheet's Figure 13 test circuit uses R_G = 4.7 Ω for timing measurements. Higher values slow switching to reduce EMI but increase switching losses; lower values risk overshoot and gate driver overstress due to 117 nC Q_g and low Crss.

Can STI150N10F7 replace STP150N10F7 in existing TO-220 designs?

No direct drop-in replacement: STI150N10F7 uses I²PAK (TO-262) footprint with different lead spacing and tab geometry versus TO-220. While electrically identical, PCB layout and heatsink mounting must be revised. Thermal performance improves (0.6 vs. 0.75 °C/W), but mechanical integration requires new cutouts and solder stencil design.

Is the body diode suitable for synchronous rectification at 250 kHz?

Yes - the intrinsic body diode exhibits t_rr = 70 ns and Q_rr = 165 nC at I_SD = 110 A, TJ = 150 °C, making it viable for synchronous rectification up to 250 kHz in forward or LLC converters. However, for >300 kHz operation, external SiC Schottky diodes remain preferred due to zero Q_rr and lower V_F.