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STMicroelectronics STI15NM60N

Part No.:
STI15NM60N
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixSTI15NM60N.pdf
Description:
MOSFET N-CH 600V 14A I2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,815

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Product details

Overview

STI15NM60N from STMicroelectronics is a second-generation MDmesh™ N-channel 600 V power MOSFET in I²PAK (TO-262) package, rated for 14 A continuous drain current at TC = 25°C, with RDS(on) ≤ 0.299 Ω at VGS = 10 V and total gate charge of 37 nC. It delivers high-efficiency switching in offline SMPS and PFC stages.

For engineers reviewing the STI15NM60N datasheet, STI15NM60N pinout, STI15NM60N application, or STI15NM60N equivalent, this device is selected for high-voltage, medium-current hard-switched converters where low conduction loss, controlled dv/dt (30 V/ns), and robust avalanche capability (EAS = 300 mJ) are critical.

Technical Context

This MOSFET employs ST's proprietary second-generation MDmesh™ vertical structure combined with strip layout to minimize RDS(on) × Qg figure-of-merit. Its 600 V VDSS rating supports universal-input AC-DC front ends up to 400 V DC bus.

It features 100% unclamped inductive avalanche tested ruggedness, low Ciss (1250 pF) and Coss (100 pF), and gate threshold voltage VGS(th) tightly specified between 2 V and 4 V - enabling reliable turn-on with standard 10 V gate drivers.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 600 V - Supports 400 V DC bus with 50% safety margin in offline converters
RDS(on) max 0.299 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 14 A, reducing heatsink requirements
Qg 37 nC - Low gate drive power demand; compatible with standard PWM controllers (e.g., UC384x)
EAS 300 mJ - Withstands single-pulse inductive energy without failure in flyback or LLC resonant circuits
dv/dt immunity 30 V/ns - Limits false turn-on during high-speed switching in noisy high-voltage nodes
Tj max 150 °C - Allows operation in sealed industrial enclosures without forced air cooling
Rthj-case 1.0 °C/W - Enables direct mounting to heatsink for thermal management in compact designs

Pinout & Package

I²PAK (TO-262) package: insulated plastic case with internal copper tab, 3-pin through-hole mount, footprint compatible with TO-220 but with larger thermal pad and improved thermal resistance (Rthj-case = 1.0 °C/W).

Pin/Terminal Circuit Role Design Meaning
1 (Source) Power return path for load current; tied to PCB ground plane Low-inductance source connection essential for minimizing switching ringing and EMI
2 (Gate) Control input for MOSFET channel activation High-impedance node requiring low-Z gate driver and local 100 nF decoupling
3 (Drain) Main high-voltage power terminal; connected to primary-side DC bus Exposed metal tab is electrically connected to Drain - requires isolation from heatsink unless floating design

Key Features

Feature Design Value
Second-generation MDmesh™ structure Reduces RDS(on) × Qg by ~30% vs. first-gen, improving efficiency in 65–100 kHz SMPS
100% avalanche tested Guarantees single-pulse ruggedness up to 300 mJ - eliminates need for external snubbers in cost-sensitive PFC designs
Low Coss (100 pF) Minimizes turn-off energy loss and improves ZVS capability in resonant topologies
ECOPACK® compliant Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards for industrial reliability
Enhanced dv/dt immunity 30 V/ns rating prevents spurious turn-on during fast voltage transients in high-noise bridge configurations

Applications

Server PSU Primary Switch Industrial AC-DC Adapter

Use Scenario: 1 kW server power supply operating in continuous conduction mode (CCM) PFC stage.

IC Role / Device Role / Timing Role: Main switching device in boost PFC circuit, switching at 65 kHz with 14 A peak inductor current.

Use Value: RDS(on) ≤ 0.299 Ω limits conduction loss to <2.9 W at full load, enabling natural convection cooling.

Use Scenario: 300 W industrial AC-DC adapter for PLC I/O modules with wide input range (85–265 VAC).

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback controller, handling 14 A pulsed drain current.

Use Value: 300 mJ EAS withstands worst-case reflected surge without clamping diode, simplifying BOM.

LED Streetlight Driver Telecom Rectifier Module

Use Scenario: Outdoor LED streetlight driver with active PFC and half-bridge LLC resonant output stage.

IC Role / Device Role / Timing Role: High-side switch in interleaved PFC leg, operating at 100 kHz with 12 A RMS current.

Use Value: Low Qg (37 nC) reduces gate driver losses and enables use of low-cost SOT-23 MOSFET drivers.

Use Scenario: -48 V telecom rectifier module converting 3-phase AC to regulated DC with hot-swap capability.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology, subjected to 600 V blocking and 14 A average current.

Use Value: 150 °C Tj max and 1.0 °C/W Rthj-case support derated operation in 70 °C ambient telecom cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP15NM60N Same die, TO-220 package; Rthj-case = 4.2 °C/W (vs. 1.0 °C/W) Requires larger heatsink; unsuitable for space-constrained PFC modules Select when board layout favors TO-220 footprint and thermal budget allows higher junction rise
FDPF15N60NZ 600 V, 15 A, RDS(on) = 0.29 Ω, Qg = 42 nC, D2PAK package Slightly higher gate charge increases driver loss; identical avalanche rating Prefer when sourcing from Fairchild/ON Semi supply chain or needing tape-and-reel packaging

Compared with STP15NM60N, STI15NM60N offers 4.2× lower thermal resistance for same silicon, enabling 30% smaller heatsinks; versus FDPF15N60NZ, it delivers 12% lower Qg, reducing gate drive power in high-frequency PFC designs.

Availability

STI15NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STI15NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STI15NM60N supports 9 A continuous drain current at TC = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limitations of the I²PAK package under sustained high-temperature operation, and must be applied in thermal design calculations for enclosed environments.

Is the drain tab electrically isolated from the package body?

No - the metal tab on the STI15NM60N I²PAK package is internally connected to the Drain terminal. Electrical isolation from the heatsink is mandatory unless the heatsink is floating or referenced to the high-voltage DC bus; ST recommends using insulating thermal pads meeting 2500 V RMS isolation per Table 1.

Does this MOSFET require negative gate turn-off voltage?

No - the device has a gate threshold voltage (VGS(th)) of 2–4 V and is fully enhanced at VGS = 10 V. Negative gate bias is not required for reliable turn-off; however, a –5 V to 0 V gate-source voltage during off-state improves noise immunity in high-dv/dt environments.

Can STI15NM60N replace STP15NM60N in an existing TO-220 layout?

No - STI15NM60N uses I²PAK (TO-262) footprint with different pin spacing (e.g., 2.4 mm e1 vs. 2.54 mm for TO-220), incompatible pad layout, and larger thermal pad area. Mechanical redesign is required; electrical substitution is valid only after thermal and layout validation.

STI15NM60N Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ II
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1250 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

STI15NM60N FAQ

1.How can I place an order for STI15NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STI15NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI15NM60N reliable?

The price and inventory of STI15NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI15NM60N is usually 5 days.

3.What payment methods are accepted for STI15NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI15NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI15NM60N?

STI15NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI15NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI15NM60N?

For technical support, including STI15NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI15NM60N requirements.

6.How does Aetrix verify that STI15NM60N is sourced from the original manufacturer or authorized distributors?

All STI15NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI15NM60N meets industry standards.

7.What is the process for return or replacement of STI15NM60N?

All STI15NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STI15NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI15NM60N part is unused and in its original packaging.

Return procedure for STI15NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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