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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI16N65M5

Name: STI16N65M5
Brand: STMicroelectronics
SKU: STI16N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI16N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI16N65M5.pdf

Description:: MOSFET N-CH 650V 12A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STI16N65M5 from STMicroelectronics is an N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in I²PAK (TO-262) package, designed for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives. It delivers best-in-class R_DS(on), 100% avalanche tested operation, and high dv/dt immunity up to 15 V/ns.

For engineers reviewing the STI16N65M5 datasheet, STI16N65M5 pinout, STI16N65M5 application, or STI16N65M5 equivalent, this device is selected for high-voltage, medium-current power conversion where low conduction loss, robust unclamped inductive switching, and thermal reliability at T_j = 150 °C are critical design requirements.

Technical Context

This MOSFET employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout, achieving 0.230 Ω R_DS(on) at V_GS = 10 V and ID = 6 A while maintaining 650 V V_DSS rating and 710 V V_(BR)DSS at T_jmax. Its 1.38 °C/W R_thj-case enables high-power density in compact heatsinked designs.

The device features fast switching with t_d(v) = 25 ns, t_r(v) = 7 ns, and Q_g = 31 nC, supported by low C_iss = 1250 pF and C_oss = 30 pF at V_DS = 100 V. Its source-drain diode exhibits t_rr = 300 ns and Q_rr = 3.5 µC under standard test conditions (T_j = 25 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Maximum continuous drain-source blocking voltage, enabling use in universal-input 85–265 VAC offline converters.
R_DS(on) max	0.230 Ω @ V_GS = 10 V, I_D = 6 A - Low conduction loss reduces I²R heating, supporting >95% efficiency in 300–500 W PFC stages.
I_D (cont)	12 A @ T_C = 25 °C - Sustains full-load current with minimal derating when mounted on ≥25 cm² 2 mm thick aluminum heatsink.
E_AS	200 mJ - Single-pulse avalanche energy rating confirms ruggedness during transient overvoltage events without external snubbers.
dv/dt capability	15 V/ns - High immunity to false turn-on in hard-switched topologies with fast voltage transients across drain.
Q_g	31 nC - Gate charge optimized for easy drive with standard 1 A peak gate drivers, minimizing driver losses and PCB area.
R_thj-case	1.38 °C/W - Low thermal resistance enables high power dissipation (90 W) in I²PAK package without forced air cooling.

Pinout & Package

I²PAK (TO-262) package: insulated plastic case with isolated tab, 3-pin through-hole mounting, ECOPACK® compliant. Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for output filter capacitor ground and current-sense resistor; referenced to driver ground.
2 (Gate)	Control input for channel conduction	High-impedance node requiring <100 nF local decoupling; sensitive to EMI-requires short, shielded trace routing.
3 (Drain)	Main high-voltage power terminal	Connected internally to metal tab; must be thermally and electrically coupled to heatsink via insulating pad or bushing.

Key Features

Feature	Design Value
Worldwide best R_DS(on)	0.230 Ω at 650 V rating - Enables smaller heatsinks and higher power density than competing 650 V MOSFETs in same package.
100% avalanche tested	Guaranteed single-pulse E_AS = 200 mJ - Eliminates need for external clamping circuits in flyback or LLC resonant converter primary switches.
High dv/dt capability	15 V/ns - Prevents spurious turn-on in high-frequency half-bridge configurations with fast-rising V_DS edges.
MDmesh™ V + PowerMESH™	Vertical drift region + optimized cell layout - Delivers superior R_DS(on) × Q_g figure-of-merit for reduced switching + conduction loss trade-off.
Easy to drive	Q_g = 31 nC, V_GS(th) = 3–5 V - Compatible with industry-standard gate drivers (e.g., STGAP2S, UCC27531) without level-shifting or buffering.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: Primary-side switch in 80+ Titanium 1 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 VDC bus, conducting 12 A peak, switching at 100 kHz with zero-voltage transition assist.

Use Value: 0.230 Ω R_DS(on) reduces conduction loss by 22% vs. legacy 650 V MOSFETs, directly improving full-load efficiency from 94.2% to 95.1%.

Use Scenario: Boost switch in 3-phase industrial motor drive front-end with 400 VAC input and 650 VDC bus.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch rated for 12 A RMS, switching at 50 kHz with interleaved dual-phase control.

Use Value: 1.38 °C/W R_thj-case allows 90 W dissipation with passive heatsinking, eliminating fan requirement in IP54-rated enclosures.

Photovoltaic Inverter DC-DC Stage

EV Onboard Charger HV Isolation Stage

Use Scenario: DC-DC isolation stage in string inverter converting 1000 VDC PV input to 400 VDC battery bus using phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch operating at 150 kHz with 650 V blocking requirement.

Use Value: 15 V/ns dv/dt rating prevents false triggering during rapid V_DS transitions in ZVS operation, ensuring reliable soft-switching.

Use Scenario: Primary-side switch in 6.6 kW AC/DC onboard charger for BEV, operating in asymmetric half-bridge configuration.

IC Role / Device Role / Timing Role: High-reliability main switch subjected to repeated unclamped inductive switching during fault recovery cycles.

Use Value: 200 mJ E_AS rating ensures survival of >10⁴ repetitive avalanche events per lifetime, meeting ISO 6469-3 safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16N65M5	Same die, TO-220 package with non-isolated tab; R_thj-case = 5.0 °C/W	Requires insulating hardware for heatsink mounting; lower power handling (25 W vs. 90 W)	Select when cost-sensitive, lower-power (<300 W), or legacy TO-220 footprint required.
IPW65R027CFD7	Infineon CoolMOS™ CFD7, 650 V, 0.027 Ω, TO-247; R_DS(on) 88% lower but Q_g = 52 nC	Higher conduction efficiency but demands stronger gate driver; not 100% avalanche tested	Select when ultra-low R_DS(on) dominates design priority and gate drive capability supports 52 nC Q_g.

Compared with STP16N65M5, STI16N65M5 offers 3.6× better thermal performance in I²PAK; versus IPW65R027CFD7, it trades 0.203 Ω higher R_DS(on) for 21 nC lower Q_g, 100% avalanche guarantee, and proven field reliability in industrial PFC.

Availability

STI16N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, photovoltaic inverters, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STI16N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ V high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V offline power conversion systems demanding low R_DS(on), rugged avalanche behavior, and thermal robustness.

FAQ

Is STI16N65M5 suitable for zero-voltage switching (ZVS) topologies?

Yes. With t_d(v) = 25 ns, t_r(v) = 7 ns, and Q_g = 31 nC, STI16N65M5 supports ZVS operation up to 200 kHz in phase-shifted full-bridge converters. Its 15 V/ns dv/dt rating ensures immunity to parasitic turn-on during resonant transitions, and its 200 mJ E_AS provides margin against voltage overshoot during soft-start or fault recovery.

What is the maximum continuous power dissipation at T_C = 100 °C?

At T_C = 100 °C, the maximum continuous drain current is 7.3 A (Table 2). Using R_DS(on) = 0.230 Ω, the resulting conduction loss is 12.2 W. With R_thj-case = 1.38 °C/W, junction temperature rise is 16.8 °C, yielding T_j = 116.8 °C - well within the 150 °C absolute maximum, confirming safe operation at 7.3 A continuous.

Does STI16N65M5 require a negative gate voltage for turn-off stability?

No. The gate threshold voltage V_GS(th) is specified 3–5 V (min–max), and the device is fully enhanced at V_GS = 10 V. While −5 V to −10 V gate drive improves noise immunity in high-dv/dt environments, the datasheet confirms stable turn-off with 0 V gate bias. Negative voltage is optional, not required for functional operation.

Can STI16N65M5 replace STP16N65M5 in existing TO-220 layouts?

No - STI16N65M5 uses I²PAK (TO-262) package with different pin pitch (2.54 mm vs. 5.08 mm), lead form (gull-wing vs. straight), and mechanical outline. Direct replacement requires PCB redesign. However, identical electrical specs and gate drive compatibility allow seamless functional migration once mechanical adaptation is implemented.

STI16N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 279mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI16N65M5 FAQ

1.How can I place an order for STI16N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI16N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI16N65M5 reliable?

The price and inventory of STI16N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI16N65M5 is usually 5 days.

3.What payment methods are accepted for STI16N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI16N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI16N65M5?

STI16N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI16N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI16N65M5?

For technical support, including STI16N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI16N65M5 requirements.

6.How does Aetrix verify that STI16N65M5 is sourced from the original manufacturer or authorized distributors?

All STI16N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI16N65M5 meets industry standards.

7.What is the process for return or replacement of STI16N65M5?

All STI16N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STI16N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI16N65M5 part is unused and in its original packaging.

Return procedure for STI16N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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