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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI16NM50N

Name: STI16NM50N
Brand: STMicroelectronics
SKU: STI16NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI16NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI16NM50N.pdf

Description:: MOSFET N-CH 500V 15A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STI16NM50N from STMicroelectronics is an N-channel 500 V, 0.21 Ω (typ), 15 A MDmesh™ II Power MOSFET in I²PAK (TO-262) package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (38 nC), and low input capacitance (1200 pF), enabling fast switching in SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STI16NM50N datasheet, STI16NM50N pinout, STI16NM50N application, or STI16NM50N equivalent, key selection criteria include R_DS(on) at 10 V, avalanche energy rating (470 mJ), thermal resistance (4.2 °C/W junction-to-case), and diode recovery performance (trr = 400 ns @ Tj = 25°C) in hard-switched topologies.

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture combined with a strip layout to minimize conduction and switching losses simultaneously. Its 500 V V_DSS rating and 15 A continuous drain current support operation in universal-input offline converters up to 3 kW.

The MOSFET integrates a robust body diode with 15 A continuous source-drain current capability, 1.3 V forward voltage at 15 A, and controlled reverse recovery (Q_rr = 5 µC, I_RRM = 24 A), making it suitable for synchronous rectification and freewheeling roles in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 V DC bus designs with 25% margin for transient overvoltage in industrial AC/DC supplies
R_DS(on) max	0.26 Ω @ V_GS = 10 V, T_C = 25°C - ensures <1.5 W conduction loss at 7.5 A, critical for thermal management in sealed enclosures
Q_g	38 nC - enables efficient gate drive with standard 1 A peak drivers, reducing switching transition time and EMI generation
E_AS	470 mJ - guarantees single-pulse unclamped inductive switching survivability in relay/snubberless designs
trr	400 ns @ T_j = 25°C - limits diode reverse recovery loss and voltage overshoot during hard commutation
R_th(j-c)	4.2 °C/W - allows 125 W power dissipation with 50°C case temperature rise, supporting compact heatsink integration
I_D (pulsed)	60 A - supports short-duration overload conditions in UPS and welding inverters without SOA violation

Pinout & Package

I²PAK (TO-262) package: insulated plastic case with exposed drain tab on underside, 3-pin through-hole mounting, RoHS-compliant ECOPACK® lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for PCB ground plane; ties directly to source of driver IC for stable gate control
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <5 Ω series gate resistor to damp ringing and limit dv/dt-induced turn-on
3 (Drain)	Main high-side power node	Internally connected to metal tab; must be electrically isolated from heatsink unless using insulating pad and thermally coupled for R_th(j-c) benefit

Key Features

Feature	Design Value
MDmesh™ II superjunction structure	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs first-gen devices, enabling higher frequency operation without efficiency penalty
100% avalanche rated	Guarantees reliable operation under inductive switching stress without external snubbers in flyback or LLC resonant converters
Low C_iss/C_oss ratio	1200 pF / 80 pF = 15:1 - improves zero-voltage switching (ZVS) initiation in half-bridge topologies
Optimized body diode	trr = 400 ns and Q_rr = 5 µC enable use as freewheeling device in non-synchronous buck converters with minimal voltage spike
ECOPACK® RoHS compliance	Lead-free second-level interconnect meets JEDEC JESD97 marking standards and supports automated reflow assembly

Applications

Industrial Switch-Mode Power Supply

Server PSU Primary Switch

Use Scenario: 3 kW telecom rectifier with active PFC front-end and LLC resonant DC/DC stage.

IC Role / Device Role / Timing Role: Main switch in boost PFC cell operating at 100 kHz, handling 15 A RMS input current.

Use Value: Low R_DS(on) and Q_g reduce conduction + switching losses to <2.1 W, enabling >96% efficiency at full load.

Use Scenario: High-density 1U server PSU with universal AC input and 12 V/200 A output.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology, switching at 250 kHz.

Use Value: 470 mJ E_AS withstands repeated line surges; 4.2 °C/W R_th(j-c) permits direct-mount heatsinking in constrained airflow.

Solar Microinverter DC/AC Stage

Induction Heating Half-Bridge

Use Scenario: Single-phase 300 W microinverter with transformerless H5 topology feeding grid.

IC Role / Device Role / Timing Role: High-side switch in H5 leg, conducting bidirectional current with body diode freewheeling.

Use Value: Controlled trr (400 ns) and low Q_rr (5 µC) suppress shoot-through risk and reduce EMI filter size by 30%.

Use Scenario: 5 kW resonant induction heater driving 20 kHz tank circuit with variable load coupling.

IC Role / Device Role / Timing Role: Low-side switch in complementary half-bridge, subject to high di/dt (400 A/µs) during zero-current switching.

Use Value: 15 V/ns dv/dt immunity prevents false turn-on; 60 A pulsed rating handles peak resonant currents without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NM50N	Same die, TO-220 package; R_th(j-c) = 1.0 °C/W but larger footprint and no isolation tab	Better thermal performance in open-frame designs; unsuitable where electrical isolation from heatsink is required	Select when board space allows TO-220 and heatsink isolation is not needed
IPP60R190C6	650 V, 0.19 Ω, 19 A, CoolMOS™ C6; lower Q_g (33 nC) but higher C_oss (110 pF)	Superior light-load efficiency in ZVS designs; less robust avalanche (E_AS = 220 mJ)	Select for 650 V systems needing higher voltage margin and lower gate drive loss, accepting reduced ruggedness

Compared with STP16NM50N, STI16NM50N trades 3.2 °C/W higher junction-to-case thermal resistance for electrical isolation and smaller footprint; versus IPP60R190C6, it offers superior avalanche immunity and proven field reliability in 500 V industrial converters despite slightly higher Q_g.

Availability

STI16NM50N is available at Aetrix Electronics and suitable for industrial SMPS, solar microinverters, and induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STI16NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The MDmesh™ MOSFET product line targets high-efficiency power conversion systems, emphasizing low R_DS(on) × Q_g figures-of-merit and rugged avalanche performance for mission-critical industrial and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STI16NM50N supports 9.4 A continuous drain current at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the I²PAK package and must be applied when ambient temperature or heatsink performance restricts case temperature rise. Designers should verify SOA compliance using Figure 2 for resistive loads or Figure 4 for TO-220FP-equivalent thermal curves.

Does STI16NM50N require a negative gate voltage for reliable turn-off?

No, STI16NM50N does not require negative gate bias for turn-off. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and full enhancement occurs at V_GS = 10 V. A gate drive voltage of 0 V is sufficient for guaranteed turn-off; however, a small negative offset (–2 V to –5 V) may improve noise immunity in high-dv/dt environments per application note AN437.

Can STI16NM50N be used in parallel configurations?

Yes, STI16NM50N supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Designers must match gate drive loop inductance and use individual 5–10 Ω gate resistors per device. Layout symmetry and thermal coupling are critical; ST recommends limiting parallel count to two devices unless validated with thermal imaging and current probe measurements per AN2772.

Is the body diode suitable for synchronous rectification?

No, the body diode is not optimized for synchronous rectification. While it conducts 15 A continuously and recovers in 400 ns, its Q_rr (5 µC) and forward voltage (1.3 V) are higher than dedicated Schottky or GaN-based synchronous rectifiers. It is appropriate for freewheeling and clamping but not recommended as the primary rectifying element in high-frequency, high-efficiency DC/DC converters.

STI16NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI16NM50N FAQ

1.How can I place an order for STI16NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STI16NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI16NM50N reliable?

The price and inventory of STI16NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI16NM50N is usually 5 days.

3.What payment methods are accepted for STI16NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI16NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI16NM50N?

STI16NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI16NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI16NM50N?

For technical support, including STI16NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI16NM50N requirements.

6.How does Aetrix verify that STI16NM50N is sourced from the original manufacturer or authorized distributors?

All STI16NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI16NM50N meets industry standards.

7.What is the process for return or replacement of STI16NM50N?

All STI16NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STI16NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI16NM50N part is unused and in its original packaging.

Return procedure for STI16NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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