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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI18N65M2

Name: STI18N65M2
Brand: STMicroelectronics
SKU: STI18N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI18N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI18N65M2.pdf

Description:: MOSFET N-CH 650V 12A I2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,533

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Product details

Overview

STI18N65M2 from STMicroelectronics is an N-channel 650 V, 12 A Power MOSFET in I²PAK package, fabricated with MDmesh M2 technology. It delivers 275 mΩ typ. R_DS(on), 20 nC total gate charge, and 35 pF C_oss, enabling high-efficiency hard-switching in offline SMPS primary-side switching stages.

For engineers reviewing the STI18N65M2 datasheet, STI18N65M2 pinout, STI18N65M2 application, or STI18N65M2 equivalent, key selection criteria include avalanche ruggedness (450 mJ E_AS), dv/dt immunity (50 V/ns), Zener-protected gate, and optimized C_oss profile for reduced switching loss in continuous conduction mode converters.

Technical Context

This device employs a strip-based MDmesh M2 vertical structure to minimize R_DS(on) while maintaining low C_oss and Crss (1.2 pF), supporting fast, low-loss turn-off in high-voltage flyback and LLC resonant topologies. Its 150 °C max junction temperature and 1.14 °C/W R_thJC support thermally constrained industrial power supplies.

The integrated body diode exhibits 331 ns trr at 25 °C and 462 ns at 150 °C, with 3.4–4.6 µC Q_rr, enabling reliable operation in discontinuous conduction mode PFC stages without external snubbing under defined di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V AC input mains with ≥20% derating margin in universal-input offline converters
R_DS(on) max	330 mΩ - Limits conduction loss to ≤0.48 W at 12 A DC, critical for thermal management in sealed enclosures
Q_g	20 nC - Enables efficient gate drive with <1 W driver power at 100 kHz, reducing gate driver IC selection burden
C_oss	35 pF - Minimizes capacitive turn-on loss and improves light-load efficiency in quasi-resonant designs
E_AS	450 mJ - Guarantees unclamped inductive switching survival in transformer-coupled topologies without external clamping
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate voltage transients in high-frequency bridge legs
T_J max	150 °C - Allows operation in ambient up to 85 °C with standard heatsinking in industrial motor drives

Pinout & Package

I²PAK (TO-262) package with isolated tab; thermally enhanced plastic housing rated for 110 W at T_C = 25 °C. Tab is electrically connected to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; Zener-protected to ±25 V
2 (TAB/D)	Drain (Tab)	Main high-voltage power terminal; tab provides low-inductance, high-current path and thermal interface to heatsink
3 (S)	Source	Power return and reference node for gate drive; connects to PCB ground plane for stable switching waveform integrity

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces R_DS(on) × area product by 35% vs prior-generation 650 V MOSFETs, enabling smaller PCB footprints in space-constrained adapters
Optimized C_oss profile	35 pF output capacitance with flat voltage dependence enables predictable soft-switching timing in QR flyback controllers
100% avalanche tested	Each unit validated for single-pulse E_AS ≥450 mJ, eliminating need for system-level avalanche qualification testing
Zener-protected gate	Integrated gate-body Zener clamps transient overvoltage to ±25 V, preventing gate oxide rupture during ESD or layout-induced ringing

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: 1 kW server power supply operating in continuous conduction mode with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 650 V DC bus, switching at 100–200 kHz.

Use Value: Low C_oss (35 pF) and 50 V/ns dv/dt ruggedness prevent false triggering and reduce turn-on loss during high-voltage transitions.

Use Scenario: 300 W industrial programmable logic controller (PLC) power module with universal AC input (85–264 VAC).

IC Role / Device Role / Timing Role: Main switching element in asymmetric half-bridge PFC stage.

Use Value: 450 mJ E_AS rating ensures robustness against line surges and transformer leakage energy without external snubbers.

LED Driver Bulk Switch

Solar Microinverter DC-DC Stage

Use Scenario: Outdoor LED streetlight driver with 600 V DC link and active cooling.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter feeding constant-current LED string.

Use Value: 275 mΩ typ. R_DS(on) limits conduction loss to <0.4 W at full load, improving thermal reliability in sealed housings.

Use Scenario: DC-DC stage in 300–600 V PV string microinverter converting to 400 V DC bus.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge isolating DC-DC converter.

Use Value: 150 °C T_J max and 1.14 °C/W R_thJC enable sustained 95% efficiency at 65 °C ambient without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N65M2	Same die, TO-220 package; R_thJA = 62.5 °C/W vs I²PAK's 62.5 °C/W but higher R_thJC (1.35 °C/W) due to less efficient case-to-heatsink interface	Preferred where through-hole assembly and manual heatsink mounting are used; lower creepage distance than I²PAK	Select when board-level mechanical constraints favor TO-220 footprint and thermal design accommodates higher junction rise
IPP65R380C7	650 V, 380 mΩ, 11 A; CoolMOS C7 technology; Q_g = 17 nC but C_oss = 45 pF; no integrated Zener protection	Better gate charge but higher C_oss and no avalanche screening; requires external gate protection circuitry	Choose only if gate drive loss dominates system loss budget and external Zener/clamp design is acceptable

Compared with STP18N65M2, STI18N65M2 offers superior thermal resistance (1.14 vs 1.35 °C/W) and creepage clearance, while IPP65R380C7 trades avalanche ruggedness and gate protection for marginally lower Q_g, increasing system-level BOM count and validation effort.

Availability

STI18N65M2 is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, and solar microinverter DC-DC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STI18N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STI18N65M2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10572 Rev 3. This derating reflects thermal limitations of the I²PAK package and ensures safe operation within SOA boundaries at elevated temperatures without exceeding 150 °C junction temperature.

Does this MOSFET include integrated gate protection?

Yes - the STI18N65M2 integrates a Zener diode between gate and source, clamping gate-source voltage to ±25 V. This protection is explicitly documented in the "Features" section and confirmed in Table 4 (I_GSS test condition), eliminating the need for external gate Zener components in most industrial designs.

How does its avalanche capability compare to standard 650 V MOSFETs?

It is 100% factory-tested for single-pulse avalanche energy (E_AS) of 450 mJ at T_J = 25 °C, significantly exceeding typical untested 650 V MOSFETs (often <200 mJ). This rating is validated per ST's internal AEC-Q101-aligned test flow using unclamped inductive load circuits per Figure 16 of DS10572.

Can it replace STP18N65M2 in existing TO-220 layouts?

No - STI18N65M2 uses I²PAK (TO-262) package with different pinout (G-D-S vs G-D-S but tab orientation and lead pitch differ), footprint, and thermal interface. Direct replacement requires PCB redesign, though both share identical die characteristics and electrical specs per datasheet Section 1–2.

STI18N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 330mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 770 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI18N65M2 FAQ

1.How can I place an order for STI18N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI18N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI18N65M2 reliable?

The price and inventory of STI18N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI18N65M2 is usually 5 days.

3.What payment methods are accepted for STI18N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI18N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI18N65M2?

STI18N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI18N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI18N65M2?

For technical support, including STI18N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI18N65M2 requirements.

6.How does Aetrix verify that STI18N65M2 is sourced from the original manufacturer or authorized distributors?

All STI18N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI18N65M2 meets industry standards.

7.What is the process for return or replacement of STI18N65M2?

All STI18N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STI18N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI18N65M2 part is unused and in its original packaging.

Return procedure for STI18N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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