My Inquiry
My Account
STMicroelectronics STI18NM60N
- Part No.:
- STI18NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STI18NM60N.pdf
- Description:
- MOSFET N-CH 600V 13A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,178
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STI18NM60N from STMicroelectronics is an N-channel 600 V, 0.285 Ω (max), 13 A MDmesh™ II Power MOSFET in I²PAK package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (35 nC typ), and low input capacitance - enabling fast switching with reduced conduction and switching losses in SMPS, PFC, and industrial motor drives.
For engineers reviewing the STI18NM60N datasheet, STI18NM60N pinout, STI18NM60N application, or STI18NM60N equivalent, key selection criteria include RDS(on) at 10 V gate drive, safe operating area (SOA) at 150 °C junction temperature, avalanche energy rating (350 mJ), and thermal resistance (Rthj-case = 1.14 °C/W) for heatsink-limited designs.
Technical Context
This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize both on-resistance and gate charge simultaneously. Its 600 V VDSS rating supports operation across universal AC input ranges (85–265 VAC) in offline converters.
The integrated body diode exhibits 300 ns reverse recovery time (Tj = 25 °C) and 4.0 µC Qrr, enabling hard-switched topologies without external snubbers. Gate threshold voltage (2–4 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Supports 400 V DC bus with 50% safety margin in 380 V PFC stages. |
| RDS(on) max | 0.285 Ω @ VGS = 10 V, ID = 6.5 A - Enables <1.2 W conduction loss at 13 A continuous current. |
| Qg typ | 35 nC - Reduces gate driver power requirement and enables >100 kHz switching in LLC resonant converters. |
| EAS | 350 mJ - Allows unclamped inductive switching without external protection in flyback or forward converters. |
| Rthj-case | 1.14 °C/W - Permits 97 W dissipation at 110 °C case temperature with standard TO-220-compatible heatsink. |
| tr/tf | 22/40 ns @ VDD = 300 V, RG = 4.7 Ω - Supports clean edge control in ZVS/ZCS soft-switching circuits. |
Pinout & Package
STI18NM60N is housed in I²PAK (TO-262) package - a surface-mount variant of TO-220 with isolated mounting flange and optimized thermal path. The package provides mechanical compatibility with TO-220 footprints while enabling automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main power drain terminal | Internally connected to die backside; electrically tied to metal tab - requires insulated mounting or direct heatsink contact. |
| 2 (Gate) | Control input | High-impedance MOS gate; 3.5 Ω intrinsic gate resistance limits ringing; requires <100 Ω series resistor for robust EMI suppression. |
| 3 (Source) | Power return reference | Low-inductance source connection; serves as local ground reference for gate driver and current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche rated | Guarantees single-pulse energy handling up to 350 mJ without degradation - eliminates need for external clamping in inductive load switching. |
| Low Ciss/Coss | 1000 pF / 225 pF - Minimizes capacitive turn-on loss and improves light-load efficiency in QR flyback converters. |
| MDmesh™ II architecture | Reduces RDS(on) × Qg figure-of-merit by 40% vs. first-gen MDmesh - directly improves total power loss in high-frequency SMPS. |
| Low gate input resistance | 3.5 Ω intrinsic Rg - Dampens gate oscillation during fast transitions, reducing EMI filter burden and layout sensitivity. |
Applications
| Server PSU Primary Switch | Industrial Motor Drive Inverter |
|---|---|
|
Use Scenario: High-density 1U server power supply operating at 100–500 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET in primary-side power stage, handling 13 A RMS current at 400 V DC bus. Use Value: Low RDS(on) and Qg reduce conduction + switching losses by 18% vs. comparable 650 V MOSFETs, enabling 95%+ efficiency at full load. |
Use Scenario: 3-phase inverter stage in 2–5 kW HVAC compressor drive with space-constrained PCB layout. IC Role / Device Role / Timing Role: Upper-leg switch in IGBT/MOSFET hybrid inverter, operating at 8–16 kHz PWM frequency. Use Value: 1.14 °C/W Rthj-case allows direct heatsink mounting without thermal vias, reducing board layer count and cost. |
| Telecom Rectifier Module | EV Onboard Charger PFC Stage |
|
Use Scenario: -48 V telecom rectifier with boost PFC front-end delivering 2.5 kW output. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) boost switch handling peak currents up to 52 A pulsed. Use Value: 52 A pulsed drain current rating and 300 ns trr enable zero-current switching without diode snubber, simplifying magnetics design. |
Use Scenario: Two-stage OBC with interleaved boost PFC operating at 65 kHz, 400 V DC link. IC Role / Device Role / Timing Role: High-side switch in 3.3 kW PFC module, subjected to repetitive avalanche stress during line dips. Use Value: 350 mJ EAS rating ensures reliable operation under 20 ms brown-out conditions without derating or redundancy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP18NM60N | Same die, TO-220 package; Rthj-case = 1.14 °C/W identical, but higher Rthj-amb (62.5 vs. 50 °C/W in I²PAK). | Preferred for through-hole prototyping or legacy board reuse; less suitable for high-power density SMT designs. | Select when manual assembly or thermal interface constraints favor leaded packages over surface-mount I²PAK. |
| IPP60R190C6 | 650 V CoolMOS™ P6; RDS(on) = 0.19 Ω, Qg = 32 nC, but no 100% avalanche test guarantee. | Better efficiency at light loads due to lower Coss; unsuitable for unclamped inductive switching without external protection. | Choose only if system-level avalanche testing is performed externally and SOA is verified per application waveform. |
Compared with STP18NM60N, STI18NM60N offers identical electrical performance with superior SMT manufacturability and slightly better ambient thermal resistance; versus IPP60R190C6, it trades 0.095 Ω higher RDS(on) for guaranteed avalanche ruggedness and simplified reliability validation.
Availability
STI18NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.
Supply support for STI18NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and automotive ICs with manufacturing in Europe and Asia.
This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC-DC converters and industrial motor control systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STI18NM60N supports 8.2 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal derating due to junction-to-case thermal resistance (1.14 °C/W) and maximum allowable junction temperature (150 °C). Designers must verify heatsink performance to maintain TC ≤ 100 °C under worst-case ambient and airflow conditions.
Does STI18NM60N require a negative gate voltage for turn-off?
No - the device has a gate threshold voltage range of 2–4 V and is fully enhanced at VGS = 10 V. Turn-off is achieved by pulling the gate to 0 V (not negative); applying –5 V is unnecessary and not recommended, as the absolute maximum VGS rating is ±25 V but typical gate drive uses 0 V/10 V or 0 V/12 V logic.
Can STI18NM60N replace STW18NM60N in a TO-247 footprint?
No - STI18NM60N uses I²PAK (TO-262) package with 3-pin gull-wing leads, while STW18NM60N uses TO-247 with straight leads and different pin pitch (2.54 mm vs. 5.4 mm). Mechanical incompatibility prevents direct replacement; PCB redesign or adapter board would be required.
Is the body diode suitable for synchronous rectification?
No - the body diode has 1.6 V forward voltage at 13 A and 300 ns reverse recovery time, making it unsuitable for synchronous rectification where low VF and fast trr are critical. External Schottky or MOSFET-based synchronous rectifiers are required for high-efficiency secondary-side rectification.
STI18NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 285mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262 (I2PAK)
STI18NM60N FAQ
1.How can I place an order for STI18NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STI18NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STI18NM60N reliable?
The price and inventory of STI18NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI18NM60N is usually 5 days.
3.What payment methods are accepted for STI18NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI18NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STI18NM60N?
STI18NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STI18NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STI18NM60N?
For technical support, including STI18NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI18NM60N requirements.
6.How does Aetrix verify that STI18NM60N is sourced from the original manufacturer or authorized distributors?
All STI18NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI18NM60N meets industry standards.
7.What is the process for return or replacement of STI18NM60N?
All STI18NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STI18NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STI18NM60N part is unused and in its original packaging.
Return procedure for STI18NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STI18NM60N Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
