STMicroelectronics STI200N6F3

Overview

STI200N6F3 from STMicroelectronics is an N-channel 60 V, <3.8 mΩ R_DS(on), 120 A continuous drain current Power MOSFET in I²PAK (TO-262) package, designed for high-efficiency switching in DC-DC converters, motor drives, and industrial power supplies. It features 100% avalanche-tested ruggedness, 918 mJ single-pulse avalanche energy, and ultra-low on-resistance enabled by STripFET™ III technology.

For engineers reviewing the STI200N6F3 datasheet, STI200N6F3 pinout, STI200N6F3 application, or STI200N6F3 equivalent, key selection criteria include its 60 V V_DS, 3.8 mΩ R_DS(on) at 10 V V_GS, 330 W T_C=25°C power dissipation, 101 nC total gate charge, and thermal resistance of 0.45 °C/W junction-to-case - all critical for thermal management and switching loss optimization in high-current power stages.

Technical Context

This device uses STripFET™ III silicon process to minimize conduction losses while maintaining robust safe operating area (SOA) up to 480 A pulsed drain current. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, and its low Crss (43 pF) supports fast, low-noise switching in hard-switched topologies.

The integrated source-drain diode delivers 120 A continuous forward current with 1.5 V forward voltage at 120 A and exhibits 67 ns reverse recovery time under 100 A/µs di/dt - enabling use in synchronous rectification and freewheeling paths without external Schottky supplementation in many mid-power applications.

Key Specifications

Pinout & Package

The STI200N6F3 is housed in an I²PAK (TO-262) package with three leads: Gate (G), Drain (D), and Source (S). The drain is internally connected to the exposed metal tab for low-inductance, high-current path and thermal conduction to the heatsink. Mounting requires electrically isolated thermal interface material when heatsink is grounded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with STP200N6F3 and IRFB4115PBF, STI200N6F3 offers identical electrical performance in a surface-mount I²PAK package optimized for automated assembly and superior thermal interface via large metal tab - making it the preferred choice for high-volume, thermally demanding power conversion designs.

Availability

STI200N6F3 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STI200N6F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial power conversion and motor control applications where low R_DS(on) and rugged avalanche performance are mandatory.

FAQ

Is STI200N6F3 suitable for gate-driving with 5 V logic?

No - its gate threshold voltage range is 2–4 V, but full enhancement and guaranteed R_DS(on) require V_GS ≥10 V per datasheet test conditions. Driving with only 5 V results in significantly elevated R_DS(on) (>10 mΩ), excessive conduction loss, and thermal runaway risk at rated current.

What is the maximum recommended PCB copper area for thermal relief in I²PAK footprint?

Per ST's AN4127 and package data, a minimum 1 inch² (645 mm²) of 2 oz copper on the component layer, connected via ≥8 thermal vias (0.3 mm diameter) to internal ground/power planes, achieves R_thj-amb ≈50 °C/W - essential to sustain 120 A continuous operation without exceeding 175°C junction temperature.

Does STI200N6F3 have integrated ESD protection on the gate?

No - the device lacks on-chip gate ESD protection structures. External gate protection (e.g., 12 V Zener clamp between G and S, series 10 Ω resistor) is mandatory to prevent damage during handling or from transient coupling in high-dV/dt environments like motor drives.

Can STI200N6F3 replace STB200N6F3 in a D2PAK-based design?

Electrically yes - identical die, same V_DS, R_DS(on), and SOA - but mechanically no without PCB redesign. I²PAK (STI200N6F3) has different lead pitch (2.54 mm vs. 2.54 mm center-to-center but distinct outline), tab shape, and thermal pad layout versus D2PAK (STB200N6F3); direct substitution causes solder joint reliability and thermal interface issues.