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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI20N65M5

Name: STI20N65M5
Brand: STMicroelectronics
SKU: STI20N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI20N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI20N65M5.pdf

Description:: MOSFET N-CH 650V 18A I2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:1,000

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Product details

Overview

STI20N65M5 from STMicroelectronics is an N-channel 650 V, 160 mΩ typ. (190 mΩ max), 18 A Power MOSFET in I²PAK package, based on MDmesh M5 vertical process technology. It delivers extremely low R_DS(on), high dv/dt capability, and 100% avalanche tested ruggedness for high-efficiency switching in industrial power supplies and motor drives.

For engineers reviewing the STI20N65M5 datasheet, STI20N65M5 pinout, STI20N65M5 application, or STI20N65M5 equivalent, this device is selected for high-voltage SMPS, PFC stages, and hard-switched converters where low conduction loss, fast switching, and robust unclamped inductive switching performance are critical.

Technical Context

This MOSFET employs ST's MDmesh M5 process to achieve optimized charge balance between drift region and gate structure, enabling both high breakdown voltage (650 V) and low specific on-resistance (160 mΩ typ. at V_GS = 10 V, I_D = 9 A). Its 15 V/ns peak diode recovery dv/dt rating supports reliable operation with fast-recovery diodes in bridge configurations.

The device integrates a robust body diode with 288 ns reverse recovery time (T_J = 25 °C) and 4 µC Q_rr, enabling use in synchronous rectification and freewheeling paths without external Schottky supplementation in many 400–520 V bus applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V with ≥1.6× safety margin in continuous operation.
R_DS(on) max	190 mΩ - Limits conduction loss to ≤3.1 W at 18 A continuous drain current (T_C = 25 °C).
I_D cont @ T_C=100°C	11.3 A - Sustains full-load current in thermally constrained enclosures with heatsink interface resistance ≤1.2 °C/W.
E_AS	270 mJ - Absorbs single-pulse inductive energy without failure during unclamped switching events (e.g., relay coil snubbing).
Q_g	36 nC - Enables gate drive design with ≤1 W average power dissipation using 10 V gate swing and 100 kHz switching.
t_r(v) / t_f(i)	7.5 ns / 7.5 ns - Supports <50 ns total switching transitions, reducing overlap loss in hard-switched topologies.
dv/dt rating	15 V/ns - Resists false turn-on during high-slew-rate commutation in half-bridge configurations with SiC diodes.

Pinout & Package

I²PAK (TO-220AB variant) package with isolated tab; thermally enhanced plastic housing rated for 150 °C junction operation and 0.96 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to exposed metal tab - must be mounted to heatsink with electrically insulating thermal interface material.
G (Pin 1)	Gate	High-impedance control terminal requiring ≤±25 V gate-source voltage; sensitive to ESD (IGSS ≤ ±100 nA).
S (Pin 3)	Source	Reference node for gate drive and current sensing; carries full load current and body diode return path.

Key Features

Feature	Design Value
MDmesh M5 process integration	Enables 650 V rating with 160 mΩ typ. R_DS(on), reducing conduction loss by ~22% vs. prior-generation 650 V MOSFETs.
100% avalanche tested	Guarantees single-pulse ruggedness to 270 mJ at T_J = 25 °C, eliminating need for external clamping in flyback or LLC resonant designs.
Low Q_gd/Q_gs ratio	18 nC / 7.5 nC = 2.4 - Minimizes Miller plateau duration, improving controllability during hard switching and reducing risk of shoot-through.
Optimized body diode	288 ns t_rr and 27 A I_RRM enable reliable freewheeling in continuous-conduction-mode PFC without oscillation or voltage overshoot.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW AC/DC front-end supplies operating at 100–150 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element in LLC resonant half-bridge, handling 400 V DC bus and 18 A peak current.

Use Value: 160 mΩ R_DS(on) reduces conduction loss by 1.8 W vs. comparable 600 V devices, improving full-load efficiency by 0.4–0.6%.

Use Scenario: Active clamp forward or phase-shifted full-bridge converter in 48 V telecom rectifier systems.

IC Role / Device Role / Timing Role: Main switching FET managing 380–400 V input with tight duty-cycle control and zero-voltage switching assist.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during fast voltage transitions across transformer leakage inductance.

Motor Drive Inverters

Induction Heating Systems

Use Scenario: Upper-leg switch in 3-phase inverter driving 3–5 HP induction motors at 4–8 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side power switch subjected to repetitive unclamped inductive energy during braking and regeneration.

Use Value: 270 mJ E_AS rating allows safe absorption of motor winding energy without external snubbers or Zener clamps.

Use Scenario: Half-bridge switch in 20–50 kHz resonant tank circuits for domestic induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching power device operating in zero-current switching (ZCS) mode with high di/dt stress.

Use Value: Low C_oss (38 pF) and Co(er) = 35 pF minimize capacitive losses during resonant cycle, sustaining >92% inverter efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20N65M5	Same die, TO-220 package; R_thJC = 0.96 °C/W identical, but R_thJA = 62.5 °C/W (vs. I²PAK's 62.5 °C/W on FR-4) - no thermal advantage.	Preferred for through-hole prototyping or legacy board layouts; lacks I²PAK's improved mechanical stability under thermal cycling.	Select when existing PCB footprint requires TO-220 mounting or when lower assembly cost outweighs marginal thermal gain.
IPW65R090CFD7	Infineon CoolMOS CFD7: 650 V, 90 mΩ typ., higher Q_g (54 nC), lower E_AS (170 mJ), no 100% avalanche test guarantee.	Better conduction loss at light loads due to lower R_DS(on), but less robust under unclamped inductive stress.	Choose only if system-level avalanche testing is performed externally and gate drive can support higher Q_g.

Compared with STP20N65M5, STI20N65M5 offers identical electrical specs but superior mechanical reliability in automated SMT assembly; versus IPW65R090CFD7, it trades 70 mΩ higher R_DS(on) for guaranteed avalanche ruggedness and lower Q_gd-driven switching instability.

Availability

STI20N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for STI20N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh M5 series targets high-efficiency, high-reliability power conversion - specifically engineered for 650 V applications demanding low R_DS(on), fast switching, and field-proven avalanche survivability in mission-critical infrastructure.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STI20N65M5 supports 11.3 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS8921 Rev 3. This rating assumes proper heatsinking to limit junction temperature to 150 °C and accounts for R_DS(on) increase with temperature.

Does STI20N65M5 include an integrated body diode, and what are its key recovery parameters?

Yes, it features a monolithic source-drain body diode characterized with 288 ns reverse recovery time (t_rr) and 4 µC reverse recovery charge (Q_rr) at T_J = 25 °C, ISD = 18 A, and di/dt = 100 A/µs. At 150 °C, t_rr increases to 342 ns and Q_rr to 4.7 µC, per Table 7.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 3 V to 5 V at 25 °C (Table 4), with typical value 4 V. Figure 9 shows normalized V_GS(th) decreases to ~0.85× nominal at 150 °C, meaning threshold drops to approximately 3.4 V - critical for ensuring sufficient overdrive margin in high-temperature operation.

Is the I²PAK package lead-free and RoHS-compliant?

Yes, STI20N65M5 is supplied in ECOPACK2-compliant I²PAK packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device uses matte tin plating on leads and halogen-free molding compound, as confirmed in Section 4 of DS8921 Rev 3.

STI20N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1434 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262 (I2PAK)

STI20N65M5 FAQ

1.How can I place an order for STI20N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI20N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI20N65M5 reliable?

The price and inventory of STI20N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI20N65M5 is usually 5 days.

3.What payment methods are accepted for STI20N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI20N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI20N65M5?

STI20N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI20N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI20N65M5?

For technical support, including STI20N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI20N65M5 requirements.

6.How does Aetrix verify that STI20N65M5 is sourced from the original manufacturer or authorized distributors?

All STI20N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI20N65M5 meets industry standards.

7.What is the process for return or replacement of STI20N65M5?

All STI20N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STI20N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI20N65M5 part is unused and in its original packaging.

Return procedure for STI20N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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