STMicroelectronics STI21NM60ND

Overview

STI21NM60ND from STMicroelectronics is an N-channel 600 V, 17 A FDmesh™ II Power MOSFET in I²PAK (TO-262) package with R_DS(on) = 0.17 Ω (typ), 100% avalanche tested, and integrated fast-recovery body diode. It serves as a high-voltage switching device in ZVS phase-shift converters and bridge topologies for industrial SMPS.

For engineers reviewing the STI21NM60ND datasheet, STI21NM60ND pinout, STI21NM60ND application, or STI21NM60ND equivalent, key selection criteria include its 40 V/ns dv/dt capability, 610 mJ single-pulse avalanche energy, low 60 nC total gate charge, and thermal resistance of 4.17 °C/W (junction-to-case).

Technical Context

This MOSFET implements ST's second-generation FDmesh™ II vertical structure combined with strip layout, enabling simultaneous reduction of conduction loss and switching loss while preserving fast diode recovery (t_rr = 150 ns at T_J = 25 °C). Its intrinsic body diode eliminates need for external anti-parallel diodes in hard-switched bridges.

The device features low input capacitance (C_iss = 1800 pF), low gate input resistance (R_g = 3 Ω), and robust unclamped inductive switching performance - validated by 8.5 A repetitive avalanche current and 48 V/ns turn-off dv/dt under full-load conditions.

Key Specifications

Pinout & Package

I²PAK (TO-262) package: insulated case, 3-pin through-hole outline with tab-connected drain. Mounts directly to heatsink via isolated mounting hole; no insulating washer required due to internal isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW21NM60ND and IPP60R190C6, STI21NM60ND offers optimal balance of thermal interface simplicity (I²PAK), avalanche ruggedness, and diode performance for ZVS bridge designs - especially where board-level isolation and serviceability are prioritized over absolute thermal limits.

Availability

STI21NM60ND is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, ZVS phase-shift converters, uninterruptible power supplies, and HVAC motor inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STI21NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–650 V industrial power conversion systems where avalanche capability and fast body diode recovery are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STI21NM60ND supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal limitation-not SOA-so operation above this current requires active cooling or derating based on actual measured case temperature and R_thj-case = 4.17 °C/W.

Does the body diode require external snubbing in bridge configurations?

No external snubber is required for the intrinsic body diode under typical ZVS or resonant conditions. Its 150 ns reverse recovery time and 0.90 µC Q_rr are optimized for soft-switching; however, in hard-switched full-bridge topologies with di/dt > 600 A/µs, a small RC snubber across drain-source may improve reliability.

Is the I²PAK package electrically isolated?

Yes-the I²PAK (TO-262) package used for STI21NM60ND features an electrically isolated metal tab. The drain is connected to the tab, but the tab itself is insulated from the PCB mounting surface, allowing direct heatsink attachment without additional insulators in most industrial designs.

How does STI21NM60ND compare to STP21NM60ND in terms of thermal performance?

STI21NM60ND (I²PAK) has R_thj-case = 4.17 °C/W, while STP21NM60ND (TO-220) is rated at 0.89 °C/W. However, the I²PAK's isolation and lower profile enable more flexible mechanical integration and better long-term reliability in vibration-prone environments, despite higher thermal resistance.