STMicroelectronics STI22NM60N

Overview

STI22NM60N from STMicroelectronics is an N-channel 600 V, 200 mΩ typ. (220 mΩ max.), 16 A MDmesh™ II Power MOSFET in TO-220FP package, optimized for high-efficiency hard-switched and resonant SMPS topologies including PFC and LLC converters. It features 100% avalanche tested ruggedness, low gate charge (44 nC), and low input capacitance (1330 pF), enabling fast switching with reduced driver loss.

For engineers reviewing the STI22NM60N datasheet, STI22NM60N pinout, STI22NM60N application, or STI22NM60N equivalent, key selection criteria include its 600 V V_DS, 200 mΩ R_DS(on) at V_GS = 10 V, 44 nC total gate charge, 300 mJ single-pulse avalanche energy, and TO-220FP thermal resistance of 4.17 °C/W (junction-to-case).

Technical Context

This device employs ST's second-generation MDmesh™ vertical strip layout, combining low on-resistance and low gate charge via optimized cell pitch and reduced drift region resistance. Its 15 V/ns dv/dt rating and 2.5 kV insulation withstand voltage support robust operation in high-noise industrial and server power supplies.

The integrated body diode exhibits 296–350 ns reverse recovery time and 4–4.7 µC Q_rr, enabling reliable performance in synchronous rectification and freewheeling roles without external snubbers in medium-frequency (<100 kHz) converters.

Key Specifications

Pinout & Package

STI22NM60N uses the TO-220FP (Type B) package with insulated tab, enabling direct mounting to heatsink without isolation hardware. The plastic body provides creepage/clearance compliant with reinforced insulation requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V Power MOSFET applications.

Compared with STP22NM60N, STI22NM60N trades slightly higher R_thJC (4.17 vs. 1.0 °C/W) for built-in 2.5 kV isolation-critical for safety-certified AC-DC designs-while matching all electrical specs. Versus IPP60R190C7, it offers proven avalanche ruggedness and superior dv/dt immunity at the expense of higher C_oss in ZVS-critical applications.

Availability

STI22NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and certified insulation performance.

Supply support for STI22NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STI22NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies where low R_DS(on), low gate charge, and rugged avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STI22NM60N supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6334 Rev 6. This rating accounts for thermal derating due to junction-to-case resistance (4.17 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Does STI22NM60N have an insulated tab, and what is its insulation rating?

Yes, STI22NM60N uses the TO-220FP (Type B) package with fully insulated metal tab. Its insulation withstand voltage is rated at 2.5 kV RMS (1 s, T_C = 25 °C) from all three leads to external heatsink, meeting reinforced insulation requirements per IEC 62368-1 for primary-secondary barrier applications.

How does the body diode recovery performance compare between STI22NM60N and standard silicon MOSFETs?

STI22NM60N exhibits t_rr = 296–350 ns and Q_rr = 4–4.7 µC at I_SD = 16 A, di/dt = 100 A/µs - significantly faster and lower charge than legacy planar MOSFETs (typically >500 ns, >10 µC). This reduces switching loss and EMI in hard-commutated freewheeling paths.

Can STI22NM60N replace STF22NM60N in existing designs?

Yes - STI22NM60N and STF22NM60N share identical die characteristics, pinout, and electrical specifications. The only difference is packaging: STF22NM60N uses TO-220FP (same insulated tab), while STI22NM60N is the same device in TO-220FP format per DS6334 Rev 6. No layout or thermal redesign is required.