STMicroelectronics STI23NM60N

Overview

STI23NM60N from STMicroelectronics is an N-channel 600 V, 19 A, 0.150 Ω R_DS(on) Power MOSFET in I²PAK (TO-262) package, built on second-generation MDmesh™ technology for high-efficiency switching converters. It delivers low gate charge (60 nC), low input capacitance (2050 pF), and 100% avalanche tested ruggedness, targeting primary-side SMPS, PFC stages, and industrial AC-DC power supplies.

For engineers reviewing the STI23NM60N datasheet, STI23NM60N pinout, STI23NM60N application, or STI23NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.150 Ω R_DS(on) at V_GS = 10 V, 60 nC total gate charge, 150 °C max junction temperature, and I²PAK thermal resistance of 3.6 °C/W (j-case).

Technical Context

This device employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its optimized cell design achieves ultra-low R_DS(on) × Q_g figure-of-merit (9.0 Ω·nC), enabling high-frequency operation in hard-switched topologies without sacrificing efficiency.

The integrated source-drain diode features 470 ns reverse recovery time (T_j = 25 °C) and 7 µC Q_rr, supporting moderate-speed synchronous rectification and flyback snubberless designs. Gate threshold voltage (2–4 V) ensures robust noise immunity while remaining compatible with standard 10 V gate drivers.

Key Specifications

Pinout & Package

I²PAK (TO-262) package: insulated case, single-row 3-pin outline with drain-connected tab for direct heatsink mounting. Thermal resistance junction-to-case is 3.6 °C/W, enabling compact thermal design in space-constrained industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP23NM60N, STI23NM60N trades thermal performance for smaller footprint and lower assembly cost; versus FDPF18N60NZ, it offers superior conduction efficiency at the expense of marginally higher gate drive demand.

Availability

STI23NM60N is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STI23NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications.

This device belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC-DC and DC-DC conversion systems.

FAQ

What is the maximum continuous drain current for STI23NM60N at 100 °C case temperature?

The maximum continuous drain current is 11.7 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This value is thermally limited-not by package current rating-but by junction temperature reaching 150 °C under steady-state conduction. Derating curves in Figure 2 confirm safe operation up to this point in I²PAK configuration.

Does STI23NM60N have a fully rated avalanche capability, and how is it tested?

Yes, STI23NM60N is 100% avalanche tested per Table 4, with single-pulse E_AS = 700 mJ at T_j = 25 °C. Testing follows the unclamped inductive load (UIL) method defined in Figure 21, applying controlled energy pulses while monitoring V_DS overshoot and post-test R_DS(on) drift to ensure no parametric degradation.

Can STI23NM60N be used in zero-voltage switching (ZVS) topologies?

Yes-its low C_oss (140 pF) and C_oss,eq (260 pF) enable reliable ZVS in LLC and phase-shifted full-bridge converters. The 30 V/ns dv/dt rating and soft-recovery body diode (t_rr = 470 ns) further support clean turn-on transitions when resonant tank voltage crosses zero.

Is the I²PAK package of STI23NM60N electrically insulated from the drain terminal?

No-the metal tab (drain) is internally connected to pin 3 and is not electrically isolated. When mounted to a heatsink, an insulating pad (e.g., mica or ceramic) must be used unless the heatsink is floating or referenced to drain potential. The device carries no internal isolation; creepage/clearance must be maintained externally per IEC 62368-1.