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STMicroelectronics STI24N60M2

Name: STI24N60M2
Brand: STMicroelectronics
SKU: STI24N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI24N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI24N60M2.pdf

Description:: MOSFET N-CH 600V 18A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STI24N60M2 from STMicroelectronics is an N-channel 600 V, 168 mΩ typ. (190 mΩ max), 18 A Power MOSFET in I²PAK package, engineered for high-efficiency switching converters using MDmesh M2 technology. It delivers low gate charge (29 nC), optimized Coss profile (55 pF), and 100% avalanche-tested ruggedness, enabling use in industrial SMPS and PFC stages.

For engineers reviewing the STI24N60M2 datasheet, STI24N60M2 pinout, STI24N60M2 application, or STI24N60M2 equivalent, key selection criteria include RDS(on) at 10 V, dv/dt ruggedness (50 V/ns), SOA limits at TC = 100 °C, and thermal resistance (RthJC = 0.83 °C/W).

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its Zener-protected gate enables robust ESD tolerance, while the integrated body diode supports hard-switched inductive loads with trr = 332 ns (TJ = 25 °C) and Qrr = 4 µC.

The MOSFET operates within a junction temperature range of –55 to 150 °C and sustains unclamped inductive energy up to 180 mJ per pulse. Its dv/dt ruggedness rating of 50 V/ns (at VDS = 480 V) ensures reliable operation in fast-switching topologies without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin.
R_DS(on) max	190 mΩ @ V_GS = 10 V, I_D = 9 A - Enables <1.7 W conduction loss at 12 A continuous drain current.
Q_g	29 nC - Reduces gate drive power and allows use with low-current drivers in high-frequency designs.
C_oss	55 pF @ V_DS = 100 V - Minimizes capacitive turn-off loss and improves ZVS feasibility in resonant converters.
E_AS	180 mJ - Supports single-pulse unclamped inductive switching without failure under defined test conditions.
dv/dt ruggedness	50 V/ns @ V_DS = 480 V - Prevents false triggering during rapid voltage transients in bridge-leg configurations.
T_J max	150 °C - Allows operation in thermally constrained enclosures with active heatsinking.

Pinout & Package

I²PAK (TO-220AB variant) package with isolated tab (drain-connected), 3-terminal configuration. Thermal resistance R_thJC = 0.83 °C/W enables efficient heat transfer to heatsink via mounting screw.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 10 V for full enhancement; ±25 V absolute max rating protects against overvoltage.
2 (D)	Drain	High-side switch node; connected to metal tab for low-inductance, high-current path to heatsink.
3 (S)	Source	Power return reference; ties to driver ground; defines V_GS control loop stability point.

Key Features

Feature	Design Value
MDmesh M2 technology	Combines low R_DS(on) and low C_oss for optimal figure-of-merit (R_DS(on) × Q_g = 5.5 Ω·nC) in 600 V class.
Zener-protected gate	Integrated gate-source clamp eliminates need for external TVS in most gate-drive layouts.
100% avalanche tested	Each unit validated for single-pulse avalanche energy (E_AS) ≥ 180 mJ, ensuring field reliability.
Optimized C_oss profile	C_oss remains stable across V_DS, reducing turn-off loss variation in wide-input-range converters.
Low Q_gd/Q_g ratio	Q_gd = 12 nC / Q_g = 29 nC ≈ 41% - Improves Miller immunity and enables faster switching transitions.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switching in 1–3 kW offline PSUs with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch in hard-switched flyback or LLC half-bridge primary stage.

Use Value: Low R_DS(on) and high dv/dt ruggedness maintain efficiency >92% and prevent shoot-through in dense PCB layouts.

Use Scenario: Active clamp forward or phase-shifted full-bridge in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Main switching element handling 12–18 A RMS current at 100–300 kHz switching frequency.

Use Value: Stable C_oss and low Q_g reduce switching loss by ~18% vs. legacy 600 V MOSFETs at 200 kHz.

Motor Drive Inverter Stages

Renewable Energy Inverters

Use Scenario: 3-phase inverter leg in HVAC compressor drives (0.75–2.2 kW).

IC Role / Device Role / Timing Role: Upper/lower switch in IGBT-replacement topology operating at 8–16 kHz PWM.

Use Value: Avalanche rating and 150 °C T_J support sustained overload without desaturation protection circuitry.

Use Scenario: DC–DC boost stage in string inverters for residential solar arrays (600–1000 V DC input).

IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter with synchronous rectification.

Use Value: 168 mΩ typ. R_DS(on) minimizes conduction loss at partial load, improving weighted efficiency (CEC-40).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24N60M2	Same die, TO-220 package; R_thJC = 0.83 °C/W but higher R_thJA (50 °C/W vs. I²PAK's 62.5 °C/W on FR-4).	Better suited for bolt-down heatsink integration; less suitable for surface-mount board space constraints.	Select when mechanical mounting flexibility and lower assembly cost outweigh SMT process requirements.
STW24N60M2	Same die, TO-247 package; R_thJC = 0.83 °C/W, R_thJA = 30 °C/W on standard heatsink; larger footprint.	Enables higher continuous current (18 A at TC = 100 °C) in forced-air-cooled systems.	Choose for >2 kW designs requiring maximum thermal headroom and proven field reliability in industrial inverters.

Compared with STP24N60M2 and STW24N60M2, STI24N60M2 offers identical electrical performance in a compact I²PAK outline-ideal for space-constrained, high-density power supplies where thermal interface to heatsink is managed via clip or soldered tab.

Availability

STI24N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, and motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for STI24N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STI24N60M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, developed specifically for high-efficiency, high-power-density AC–DC and DC–DC conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STI24N60M2 supports 12 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS9377 Rev 6. This rating accounts for thermal derating due to junction-to-case resistance (0.83 °C/W) and safe operating area limitations under pulsed conditions.

Does STI24N60M2 include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source, providing ±25 V gate-source voltage clamping. This eliminates the need for external gate protection in typical gate-driver configurations, as confirmed in the "Features" section and Absolute Maximum Ratings table.

Can STI24N60M2 be used in zero-voltage switching (ZVS) topologies?

Yes - its low and stable C_oss (55 pF) and C_oss,eq (258 pF) enable predictable resonant timing in LLC and phase-shifted full-bridge converters. The datasheet confirms C_oss behavior across V_DS in Figure 8, supporting ZVS design validation.

Is the I²PAK package lead-free and RoHS-compliant?

Yes - ST specifies ECOPACK® compliance for STI24N60M2, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device uses matte tin plating and halogen-free molding compound, as documented in Section 4 of DS9377 Rev 6.

STI24N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262 (I2PAK)

STI24N60M2 FAQ

1.How can I place an order for STI24N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI24N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI24N60M2 reliable?

The price and inventory of STI24N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI24N60M2 is usually 5 days.

3.What payment methods are accepted for STI24N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI24N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI24N60M2?

STI24N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI24N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI24N60M2?

For technical support, including STI24N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI24N60M2 requirements.

6.How does Aetrix verify that STI24N60M2 is sourced from the original manufacturer or authorized distributors?

All STI24N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI24N60M2 meets industry standards.

7.What is the process for return or replacement of STI24N60M2?

All STI24N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STI24N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI24N60M2 part is unused and in its original packaging.

Return procedure for STI24N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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