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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI24NM60N

Name: STI24NM60N
Brand: STMicroelectronics
SKU: STI24NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI24NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI24NM60N.pdf

Description:: MOSFET N CH 600V 17A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STI24NM60N from STMicroelectronics is an N-channel 600 V, 168 mΩ typ. (190 mΩ max), 17 A MDmesh™ II Power MOSFET in I²PAK package, designed for high-efficiency hard-switching and resonant-mode SMPS topologies including PFC, LLC, and flyback converters. It features 100% avalanche tested ruggedness, low gate charge (44 nC), and optimized capacitance profile (Ciss = 1330 pF, Crss = 3.2 pF) for fast switching with reduced EMI.

For engineers reviewing the STI24NM60N datasheet, STI24NM60N pinout, STI24NM60N application, or STI24NM60N equivalent, key selection criteria include its 600 V V_DS, 168 mΩ R_DS(on) at 10 V_GS, 44 nC Q_g, 100% unclamped inductive avalanche rating (E_AS = 300 mJ), and thermal resistance R_thJC = 1 °C/W - critical for high-power density industrial and telecom power designs.

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, achieving ultra-low R_DS(on) × Q_g figure-of-merit (FoM) of 7.4 Ω·nC. Its low C_oss (80 pF) and minimal C_rss/C_iss ratio (0.24%) enable clean voltage transitions and reduced switching losses in high-frequency ZVS/ZCS circuits.

The integrated body diode exhibits fast reverse recovery (t_rr = 340 ns at T_J = 25°C, 404 ns at 150°C) and low Q_rr (4.6–5.7 µC), minimizing commutation loss and diode-induced ringing in bridge-leg configurations. Gate threshold voltage (V_GS(th) = 2–4 V) ensures robust noise immunity while supporting standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified systems with ≥50 V margin for surge and ringing.
R_DS(on) max	190 mΩ at V_GS = 10 V, I_D = 8 A - enables <1.5 W conduction loss at 17 A continuous drain current.
Q_g	44 nC - reduces gate drive power and allows use of lower-cost, lower-current gate drivers.
E_AS	300 mJ (single-pulse, T_J = 25°C) - guarantees reliable operation under unclamped inductive switching stress without external snubbers.
t_rr	340 ns (T_J = 25°C) - limits diode recovery loss and dv/dt-induced shoot-through risk in half-bridge topologies.
R_thJC	1 °C/W - permits >125 W dissipation with modest heatsinking (ΔT = 125°C), supporting compact 500–1000 W designs.

Pinout & Package

I²PAK (TO-263) package: insulated plastic case with integral copper tab for direct heatsink mounting; RoHS-compliant, ECOPACK®2 rated; outline per ST document 0004982_Rev_10.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to exposed metal tab - must be isolated from heatsink unless referenced to system ground; primary high-voltage node.
G (Pin 1)	Gate	High-impedance control terminal; requires low-inductance routing and local 100 nF bypass to minimize oscillation during switching.
S (Pin 2)	Source	Power return path for drain current; serves as gate driver reference; low-inductance connection critical for dV/dt immunity.

Key Features

Feature	Design Value
MDmesh™ II superjunction structure	Enables 600 V rating with R_DS(on) × Q_g FoM of 7.4 Ω·nC - 35% better than first-gen devices for same voltage class.
100% unclamped avalanche tested	Guarantees single-pulse E_AS ≥ 300 mJ - eliminates need for external clamping in PFC boost and flyback snubberless designs.
Low C_rss/C_iss ratio (0.24%)	Reduces Miller-induced turn-on risk and improves controllability in high-dv/dt environments (e.g., >10 V/ns).
Optimized body diode recovery	t_rr = 340 ns / Q_rr = 4.6 µC - cuts diode conduction loss by ~40% vs. standard planar MOSFETs in synchronous rectification.

Applications

Industrial Switch-Mode Power Supplies

Telecom Rectifier Modules

Use Scenario: 3 kW three-phase PFC front-end operating at 100 kHz with interleaved boost stages.

IC Role / Device Role / Timing Role: Main switching device in each boost leg; handles 17 A RMS current with peak ID of 68 A during transients.

Use Value: Low R_DS(on) and Q_g reduce total losses by 1.8 W per device vs. legacy 600 V MOSFETs, enabling >98% efficiency at full load.

Use Scenario: 48 V/50 A telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Primary switch in forward converter output stage; operates in hard-switched mode with 300 V bus.

Use Value: 1 °C/W R_thJC allows direct mounting to cold plate, eliminating thermal interface material and reducing thermal stack-up by 2.3°C/W.

Server PSU Primary Side

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 1.5 kW server PSU using asymmetric half-bridge topology with 200 kHz switching.

IC Role / Device Role / Timing Role: High-side switch subjected to 600 V blocking and 11 A continuous current at 100°C case temperature.

Use Value: Stable R_DS(on) over temperature (R_DS(on) × 1.5 at 100°C) maintains predictable conduction loss across full thermal range.

Use Scenario: 6.6 kW bidirectional OBC with dual-active-bridge PFC and DC-DC stages.

IC Role / Device Role / Timing Role: Boost switch in AC/DC PFC section; endures repeated 100% line surges and lightning-induced transients.

Use Value: 100% avalanche qualification ensures no failure under 6 kV/1.2×50 µs surge events per IEC 61000-4-5, reducing system-level protection cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24NM60N	Same die, TO-220 package; R_thJC = 4.17 °C/W (vs. 1 °C/W); higher thermal resistance limits power density.	Preferred for low-cost, low-volume prototyping where heatsink space is unconstrained and PCB layout favors through-hole mounting.	Select when mechanical compatibility with legacy TO-220 footprints is required and thermal budget allows ≥3× larger heatsink area.
IPP60R190C7	Infineon CoolMOS™ C7; 190 mΩ R_DS(on), 35 nC Q_g, but no 100% avalanche test data published; t_rr = 420 ns.	Better gate charge but weaker diode recovery and unverified avalanche ruggedness - unsuitable for snubberless PFC or high-reliability telecom.	Consider only if gate drive loss dominates system loss and avalanche stress is absent; verify E_AS via application testing.

Compared with STP24NM60N, STI24NM60N delivers 4.2× lower junction-to-case thermal resistance for identical silicon, enabling 3× higher power density; versus IPP60R190C7, it offers documented avalanche robustness and faster diode recovery at the cost of 9 nC higher Q_g.

Availability

STI24NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, server PSUs, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STI24NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC and DC-DC conversion in industrial and telecom infrastructure where low conduction + switching loss and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STI24NM60N supports 11 A continuous drain current at T_C = 100°C, as specified in Table 1 of DS6979 Rev 5. This derating reflects thermal limitations of the I²PAK package and ensures safe operation within SOA boundaries up to 150°C junction temperature.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage of 2–4 V and is fully enhanced at V_GS = 10 V. A negative gate voltage is not required; however, driving V_GS to –5 V during off-state improves noise immunity in high-dv/dt environments and suppresses unintended turn-on due to Miller coupling.

Can STI24NM60N replace STF24NM60N in a TO-220FP-based design?

Electrically identical, but mechanically incompatible: STI24NM60N uses I²PAK (surface-mount) while STF24NM60N uses TO-220FP (through-hole). Direct replacement requires PCB redesign, thermal pad rework, and gate loop optimization. Electrical performance (R_DS(on), Q_g, E_AS) is identical across all three variants.

What is the insulation withstand voltage rating between leads and heatsink?

The STI24NM60N I²PAK package does not specify V_ISO - unlike TO-220FP (2.5 kV RMS), the I²PAK variant lacks internal isolation between tab and leads. External insulation (e.g., silicone pad or ceramic washer) is mandatory when mounting to a conductive heatsink referenced to non-drain potential.

STI24NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI24NM60N FAQ

1.How can I place an order for STI24NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STI24NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI24NM60N reliable?

The price and inventory of STI24NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI24NM60N is usually 5 days.

3.What payment methods are accepted for STI24NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI24NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI24NM60N?

STI24NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI24NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI24NM60N?

For technical support, including STI24NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI24NM60N requirements.

6.How does Aetrix verify that STI24NM60N is sourced from the original manufacturer or authorized distributors?

All STI24NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI24NM60N meets industry standards.

7.What is the process for return or replacement of STI24NM60N?

All STI24NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STI24NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI24NM60N part is unused and in its original packaging.

Return procedure for STI24NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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