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STMicroelectronics STI24NM65N
- Part No.:
- STI24NM65N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STI24NM65N.pdf
- Description:
- MOSFET N-CH 650V 19A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,717
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Product details
Overview
STI24NM65N from STMicroelectronics is an N-channel 650 V, 19 A, 0.16 Ω RDS(on) Power MOSFET in I²PAK (TO-262) package, featuring second-generation MDmesh™ technology for high-efficiency switching in offline SMPS and PFC stages. It delivers low gate charge (70 nC), high avalanche ruggedness (500 mJ), and 150 °C max junction temperature.
For engineers reviewing the STI24NM65N datasheet, STI24NM65N pinout, STI24NM65N application, or STI24NM65N equivalent, this device is selected for high-voltage DC-DC converters, resonant LLC topologies, and industrial motor drives requiring robust unclamped inductive switching capability and low conduction loss at 100 kHz–500 kHz operation.
Technical Context
This MOSFET employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize both RDS(on) and gate charge simultaneously. Its 650 V VDSS, 0.16 Ω typical RDS(on) at VGS = 10 V, and 70 nC total gate charge enable high-frequency hard-switching with reduced switching losses.
The device integrates a fast-recovery body diode (trr = 460 ns @ 25 °C, 9 µC Qrr), supports 15 V/ns dv/dt immunity, and is 100% avalanche tested to 500 mJ single-pulse energy - enabling reliable operation in flyback, forward, and active clamp topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - Withstands full mains-derived DC bus (e.g., 400 V rectified + 20% surge) with margin for transient overvoltage in AC-DC front-ends. |
| RDS(on) max | 0.19 Ω - Ensures ≤ 34 W conduction loss at 19 A continuous drain current, critical for thermal management in sealed enclosures. |
| Qg | 70 nC - Enables efficient gate drive with standard 1 A peak drivers at 300 kHz, reducing driver power dissipation and EMI. |
| EAS | 500 mJ - Supports unclamped inductive switching in relay driving or transformer reset without external clamping components. |
| tr/tf | 10 ns / 20 ns - Facilitates clean, low-overshoot switching transitions in high-speed ZVS/ZCS circuits with minimal dead-time penalty. |
| TJ max | 150 °C - Allows operation in high-ambient environments (e.g., industrial motor control cabinets) with derated current above 100 °C case temperature. |
Pinout & Package
STI24NM65N is housed in I²PAK (TO-262) package: 3-pin, through-hole, insulated tab, thermally enhanced plastic housing with exposed drain pad. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives 10 V logic-level drive; input capacitance (Ciss = 2500 pF) sets RC time constant with gate resistor for precise turn-on/turn-off timing. |
| Pin 2 (Drain) | High-side power output | Connected to heatsink via isolated mounting; carries full load current and withstands 650 V blocking; tab is electrically tied to drain. |
| Pin 3 (Source) | Reference node | Serves as return path for load current and gate drive loop; low-inductance PCB layout essential to suppress shoot-through during commutation. |
Key Features
| Feature | Design Value |
|---|---|
| Second-generation MDmesh™ structure | Reduces RDS(on) × Qg figure-of-merit by 35% vs first-gen, enabling higher efficiency in 100–300 kHz SMPS designs. |
| 100% avalanche tested | Guarantees single-pulse energy handling up to 500 mJ, eliminating need for external avalanche protection in PFC boost inductors. |
| Low Coss eq (310 pF) | Minimizes capacitive turn-off loss and improves zero-voltage switching (ZVS) range in resonant converters operating above 200 kHz. |
| ECOPACK® RoHS-compliant packaging | Lead-free second-level interconnect with JEDEC JESD97 marking; qualified for lead-free reflow and wave soldering per IPC-J-STD-020. |
Applications
| Industrial Motor Drives | Server PSU PFC Stages |
|---|---|
|
Use Scenario: Three-phase inverter half-bridge stage in 1–3 kW servo drives. IC Role / Device Role / Timing Role: High-side switch in 60 kHz PWM-controlled IGBT/MOSFET bridge; handles 19 A RMS phase current with 150 °C junction limit. Use Value: Low RDS(on) reduces conduction loss by 22% vs comparable 0.22 Ω devices, lowering heatsink size and system cost. |
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC for 1.5 kW server power supply. IC Role / Device Role / Timing Role: Fast-switching main power switch operating at 65 kHz with 10 V gate drive; manages 19 A peak inductor current. Use Value: 70 nC Qg cuts gate drive loss by 30% vs legacy 100 nC parts, improving overall PFC efficiency from 95.2% to 96.1%. |
| Telecom Rectifier Modules | EV Onboard Charger (OBC) DC-DC Stage |
|
Use Scenario: Primary-side switch in 3.3 kW telecom rectifier using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: ZVS-capable primary switch with 460 ns body diode recovery; operates at 100 kHz with 500 V DC bus. Use Value: 310 pF Coss eq enables reliable soft-switching down to 20% load, reducing EMI filter size and cost. |
Use Scenario: Isolated DC-DC converter primary switch in bidirectional OBC for 400 V battery systems. IC Role / Device Role / Timing Role: 650 V-rated switch handling 19 A pulsed current during 100 kHz resonant LLC operation with 800 V transient tolerance. Use Value: 15 V/ns dv/dt rating prevents false triggering during fast voltage transients on 400 V bus, enhancing system reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP24NM65N | Same die, TO-220 package; Rthj-case = 0.78 °C/W vs 3.1 °C/W for I²PAK; higher thermal resistance limits power density. | Better suited for lower-power (<1 kW), naturally cooled designs where footprint is constrained but heatsinking is simple. | Select when mechanical compatibility with legacy TO-220 footprints is required and thermal budget allows 25% lower power handling. |
| IPP65R190C7 | Infineon CoolMOS™ C7; 0.19 Ω RDS(on), 55 nC Qg, but only rated to 650 V (not 710 V); no guaranteed avalanche rating. | Optimized for ultra-high-frequency (500+ kHz) DCM PFC where lowest Qg dominates, not ruggedness. | Choose only if design prioritizes gate drive efficiency over unclamped inductive robustness and has strict <100 ns tr requirements. |
Compared with STP24NM65N and IPP65R190C7, STI24NM65N offers superior thermal interface via I²PAK's insulated tab, guaranteed 500 mJ avalanche energy, and higher VDSS margin - making it optimal for industrial-grade, high-reliability 1–3 kW converters where long-term field stability outweighs marginal Qg savings.
Availability
STI24NM65N is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, server PSUs, and EV onboard charger designs requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for STI24NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STI24NM65N belongs to the MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including PFC, SMPS, and motor control - emphasizing low RDS(on) × Qg FoM and rugged avalanche performance.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STI24NM65N supports 12 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the I²PAK package (Rthj-case = 3.1 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.
Does STI24NM65N require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage (VGS(th)) of 2–4 V and is fully enhanced at VGS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended, as the absolute maximum VGS rating is ±25 V but negative bias provides no benefit for this part's threshold stability or dv/dt immunity.
Can STI24NM65N be used in synchronous rectification configurations?
No. STI24NM65N is an N-channel high-side switch optimized for primary-side switching in isolated topologies. Its body diode reverse recovery characteristics (trr = 460 ns, Qrr = 7 µC) are not optimized for synchronous rectification, and its gate drive architecture lacks the low-threshold, low-Qgd traits required for efficient low-side FET operation in secondary-side synchronous rectifiers.
Is the I²PAK package of STI24NM65N compatible with standard TO-220 heatsinks?
Yes - the I²PAK (TO-262) package shares identical mounting hole spacing (e1 = 4.95–5.15 mm, e = 2.40–2.70 mm) and tab dimensions with TO-220, allowing direct mechanical compatibility with industry-standard TO-220 heatsinks. However, electrical isolation must be maintained via insulating washer or pad, as the drain tab is live at 650 V potential.
STI24NM65N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 160W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STI24NM65N FAQ
1.How can I place an order for STI24NM65N through Aetrix?
Please submit a Request for Quotation (RFQ) for STI24NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STI24NM65N reliable?
The price and inventory of STI24NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI24NM65N is usually 5 days.
3.What payment methods are accepted for STI24NM65N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI24NM65N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STI24NM65N?
STI24NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STI24NM65N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STI24NM65N?
For technical support, including STI24NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI24NM65N requirements.
6.How does Aetrix verify that STI24NM65N is sourced from the original manufacturer or authorized distributors?
All STI24NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI24NM65N meets industry standards.
7.What is the process for return or replacement of STI24NM65N?
All STI24NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STI24NM65N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STI24NM65N part is unused and in its original packaging.
Return procedure for STI24NM65N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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