STMicroelectronics STI260N6F6

Overview

STI260N6F6 from STMicroelectronics is an N-channel 60 V, 2.4 mΩ R_DS(on), 120 A Power MOSFET in I²PAK (TO-262) package, fabricated using STripFET™ VI DeepGATE™ technology. It delivers ultra-low conduction loss and high avalanche ruggedness for high-current DC-DC and motor drive switching stages in industrial power supplies and UPS systems.

For engineers reviewing the STI260N6F6 datasheet, STI260N6F6 pinout, STI260N6F6 application, or STI260N6F6 equivalent, key selection criteria include its 0.5 °C/W junction-to-case thermal resistance, 183 nC total gate charge, 120 A continuous drain current at T_C = 25 °C, and compatibility with standard TO-220 footprint layouts despite I²PAK packaging.

Technical Context

This MOSFET employs a proprietary DeepGATE™ gate structure that reduces gate charge and enhances channel density, enabling lower R_DS(on) without sacrificing switching speed. Its 60 V V_DS rating and 480 A pulsed drain current support robust operation in unclamped inductive load circuits.

The device features integrated source-drain diode with 55.6 ns reverse recovery time and 116 nC Q_rr at 150 °C, making it suitable for synchronous rectification and freewheeling paths where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

The STI260N6F6 uses the I²PAK (TO-262) package with three leads and an exposed drain tab for thermal and electrical connection. The tab is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP260N6F6 and IRFB4115PBF, the STI260N6F6 offers the lowest thermal resistance and on-resistance in its voltage class, enabling higher power density and efficiency in space-constrained industrial and EV charging applications.

Availability

STI260N6F6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply and long-term production continuity.

Supply support for STI260N6F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and automotive ICs.

The STripFET™ VI DeepGATE™ product line targets high-efficiency, high-current power conversion systems including telecom rectifiers, UPS inverters, and industrial motor controllers.

FAQ

What is the maximum safe operating temperature for STI260N6F6?

The STI260N6F6 has a maximum operating junction temperature of 175 °C and a storage temperature range of –55 to +175 °C. With its 0.5 °C/W R_thj-case, sustained operation at 120 A requires case temperature ≤25 °C to maintain T_j ≤175 °C. Derating begins above 25 °C at 2 W/°C.

Can STI260N6F6 be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage ranges from 2 V to 4 V, but full enhancement requires V_GS ≥10 V to achieve rated 2.4 mΩ R_DS(on). A 3.3 V signal yields high R_DS(on) and excessive heating. A dedicated gate driver (e.g., STGW30V60DF) or level-shifting circuit is required for reliable switching.

Is the source-drain diode suitable for synchronous rectification?

Yes - the integrated body diode exhibits 55.6 ns reverse recovery time and 116 nC Q_rr at 150 °C, enabling efficient synchronous rectification in DC-DC converters up to 200 kHz. However, external Schottky diodes remain preferred for <100 ns t_rr requirements in high-frequency GaN-based topologies.

How does STI260N6F6 compare to STP260N6F6 in PCB layout?

Both share identical pinout numbering (G-D-S), but STI260N6F6 uses I²PAK (TO-262) with shorter lead length and wider tab, allowing tighter thermal vias under the tab. STP260N6F6's TO-220 variant requires longer creepage distances and larger cutouts, increasing board area by ~22% for equivalent thermal performance.