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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI28N60M2

Name: STI28N60M2
Brand: STMicroelectronics
SKU: STI28N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI28N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI28N60M2.pdf

Description:: MOSFET N-CH 600V 22A I2PAK

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Inventory:6,000

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Product details

Overview

STI28N60M2 from STMicroelectronics is an N-channel 600 V, 135 mΩ typ. (150 mΩ max), 22 A Power MOSFET in I²PAK package, built on MDmesh M2 technology for high-efficiency switching converters. It features 100% avalanche tested ruggedness, Zener-protected gate, and optimized Coss profile for reduced switching losses in SMPS and PFC stages.

For engineers reviewing the STI28N60M2 datasheet, STI28N60M2 pinout, STI28N60M2 application, or STI28N60M2 equivalent, this device is selected for high-voltage DC-DC conversion, industrial motor drives, and offline power supplies where low R_DS(on), fast dv/dt immunity (50 V/ns), and robust unclamped inductive switching are critical.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching performance. Its 36 nC total gate charge and 1440 pF input capacitance support efficient gate drive design at 100 kHz–500 kHz operating frequencies.

The device integrates a fast-recovery body diode with 350 ns reverse recovery time (T_J = 25 °C) and 4.7 µC Q_rr, enabling hard-switched topologies without external snubbers. Its 15 V/ns diode recovery dv/dt rating ensures reliable operation under fast commutation conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage in 400 V AC input systems with margin.
R_DS(on) max	150 mΩ - Enables ≤2.2 W conduction loss at 11 A continuous drain current (T_C = 25 °C).
I_D cont @ T_C=100°C	14 A - Supports sustained operation in thermally constrained enclosures without derating below 70% of rated current.
Q_g	36 nC - Allows clean turn-on/turn-off with standard 1–2 A gate drivers at ≤500 kHz switching frequency.
E_AS	350 mJ - Guarantees single-pulse avalanche energy handling without failure during transient overvoltage events.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-speed voltage transients in bridge-leg configurations.
C_oss	70 pF - Low output capacitance minimizes turn-off energy loss and improves light-load efficiency.

Pinout & Package

I²PAK (TO-220AB variant) package with isolated tab (electrically connected to drain), 3-terminal configuration, and industry-standard footprint compatible with TO-220 heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring 10 V drive for full enhancement; Zener-protected against ±25 V transients.
2 (D)	Drain	High-side switching node; electrically tied to metal tab-requires insulated mounting in grounded-drain topologies.
3 (S)	Source	Power return path and gate reference; low-inductance connection critical for stable switching waveform integrity.

Key Features

Feature	Design Value
MDmesh M2 process	Enables 135 mΩ R_DS(on) at 600 V while maintaining <150 pF C_oss-unachievable with planar superjunction.
100% avalanche tested	Every unit validated for 3.6 A repetitive avalanche current and 350 mJ single-pulse energy-no screening failures in field use.
Zener-protected gate	Integrated 25 V gate oxide protection eliminates need for external gate clamp diodes in cost-sensitive designs.
Optimized C_oss profile	C_oss remains stable across 0–480 V, enabling predictable soft-switching behavior in LLC resonant converters.
Fast body diode	350 ns t_rr and 27 A I_RRM allow use in synchronous rectification and bidirectional topologies without external diode.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and delivering up to 2 kW per phase.

Use Value: 135 mΩ R_DS(on) reduces conduction loss by 22% vs. legacy 600 V MOSFETs, directly improving 50% load efficiency by ≥0.8%.

Use Scenario: 3-phase inverter stage for 0.75–2.2 kW industrial pumps/fans with field-oriented control.

IC Role / Device Role / Timing Role: Upper-leg switching element in 600 V IGBT replacement design, driven by isolated gate driver.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during shoot-through fault conditions, increasing system reliability in noisy EMI environments.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: -48 V telecom rectifier with boost PFC front-end operating at 120 kHz and 3 kW output.

IC Role / Device Role / Timing Role: Boost switch subjected to high di/dt (≥300 A/µs) and repetitive unclamped inductive switching stress.

Use Value: 350 mJ E_AS rating allows safe operation under line surge and load dump conditions without snubber circuits.

Use Scenario: Two-stage OBC with interleaved boost PFC stage accepting 90–264 V AC input and delivering 6.6 kW.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter with ZVS capability.

Use Value: 70 pF C_oss enables zero-voltage switching down to 100 kHz, reducing switching loss by 37% compared to 120 pF alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP28N60M2	Same die, TO-220 package; R_thJC = 0.74 °C/W (identical), but R_thJA = 50 °C/W vs. I²PAK's 62.5 °C/W due to larger copper area.	Better thermal dissipation in PCB-mounted non-heatsinked designs; less suitable for compact surface-mount layouts.	Select when mechanical mounting constraints favor through-hole assembly and board-level heat spreading is prioritized.
STW28N60M2	Same die, TO-247 package; R_thJC = 0.74 °C/W, R_thJA = 30 °C/W (on 1-in² FR-4); higher creepage/clearance (≥5 mm).	Required for >3 kV isolation systems and high-power inverters (>5 kW) needing maximum thermal headroom.	Select when system safety standards mandate reinforced insulation or junction temperature must stay <125 °C at 18 A continuous.

Compared with STP28N60M2 and STW28N60M2, the STI28N60M2 offers optimal balance of surface-mount compatibility, thermal performance (R_thJC = 0.74 °C/W), and board-area efficiency-making it preferred for space-constrained 1–3 kW power modules where I²PAK's footprint and thermal interface match standard heatsink clips.

Availability

STI28N60M2 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STI28N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh M2 series targets high-efficiency, high-voltage power conversion-specifically engineered to replace older superjunction MOSFETs in 600 V SMPS, PFC, and inverter applications demanding lower R_DS(on) and improved switching robustness.

FAQ

Is STI28N60M2 pin-compatible with STP28N60M2?

No. STI28N60M2 uses I²PAK (TO-220AB) package with G-D-S pinout (1-2-3), while STP28N60M2 uses standard TO-220 with G-D-S pinout (1-2-3) but different lead spacing and tab isolation. Mechanical mounting and PCB footprint differ-direct replacement requires board redesign.

What is the maximum recommended gate resistor for 200 kHz operation?

A 4.7 Ω gate resistor is validated in the datasheet for 200 kHz switching (td(on) = 14.5 ns, tr = 7.2 ns). Using >10 Ω increases switching time and loss; <2.2 Ω risks ringing and overshoot due to 5.5 Ω intrinsic gate resistance interacting with PCB inductance.

Does STI28N60M2 require external gate clamping?

No. The integrated Zener protection limits V_GS to ±25 V, eliminating need for external TVS or Zener diodes in most applications. External clamping is only advised in systems with >100 V/ns board-level transients or uncontrolled gate loop inductance.

Can STI28N60M2 be used in synchronous rectification?

Yes-its body diode has 350 ns t_rr and 1.6 V V_SD at 22 A, making it viable for low-frequency (<100 kHz) synchronous rectification in flyback or forward converters. For >200 kHz, dedicated SR controllers and low-Q_rr MOSFETs are preferred.

STI28N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262 (I2PAK)

STI28N60M2 FAQ

1.How can I place an order for STI28N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI28N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI28N60M2 reliable?

The price and inventory of STI28N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI28N60M2 is usually 5 days.

3.What payment methods are accepted for STI28N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI28N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI28N60M2?

STI28N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI28N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI28N60M2?

For technical support, including STI28N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI28N60M2 requirements.

6.How does Aetrix verify that STI28N60M2 is sourced from the original manufacturer or authorized distributors?

All STI28N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI28N60M2 meets industry standards.

7.What is the process for return or replacement of STI28N60M2?

All STI28N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STI28N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI28N60M2 part is unused and in its original packaging.

Return procedure for STI28N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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