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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI30N65M5

Name: STI30N65M5
Brand: STMicroelectronics
SKU: STI30N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI30N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI30N65M5.pdf

Description:: MOSFET N-CH 650V 22A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STI30N65M5 from STMicroelectronics is an N-channel 650 V, 125 mΩ typ. (139 mΩ max.), 22 A Power MOSFET based on MDmesh M5 vertical process technology in TO-247 package. It delivers extremely low R_DS(on), high dv/dt capability (15 V/ns), and 100% avalanche tested ruggedness for high-efficiency hard-switching power conversion stages in industrial SMPS and PFC circuits.

For engineers reviewing the STI30N65M5 datasheet, STI30N65M5 pinout, STI30N65M5 application, or STI30N65M5 equivalent, this device is selected for high-voltage, high-current switching where conduction loss minimization, fast turn-off (50 ns t_d(off)), and robust unclamped inductive switching (E_AS = 500 mJ) are critical design requirements.

Technical Context

This MOSFET employs ST's MDmesh M5 silicon architecture, combining deep-trench vertical charge compensation with optimized cell pitch to achieve superior R_DS(on) × Q_g figure-of-merit (125 mΩ × 64 nC). Its gate threshold voltage (3–5 V) ensures stable enhancement-mode operation with standard 10 V gate drive.

The device integrates a fast-recovery body diode (t_rr = 336 ns, Q_rr = 6 µC at 25 °C) and supports high dv/dt (15 V/ns) without spurious turn-on, enabling reliable operation in totem-pole PFC and resonant LLC primary-side switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V nominal with ≥1.6× safety margin in 380–400 VAC input systems.
R_DS(on) max	139 mΩ at V_GS = 10 V, I_D = 11 A - Enables <1.5 W conduction loss at 22 A continuous drain current (T_C = 25 °C).
I_D cont	22 A at T_C = 25 °C - Supports high-power 1–3 kW offline converters with forced-air or heatsink cooling.
E_AS	500 mJ single-pulse avalanche energy - Guarantees ruggedness against transient overvoltage during unclamped inductive switching.
t_d(off)	50 ns typical - Reduces switching transition time, lowering dynamic losses in 65–100 kHz hard-switched topologies.
Q_g	64 nC total gate charge - Matches standard gate drivers (e.g., UCC27531, IRS2007) without excessive Miller plateau duration.
C_oss	68 pF - Low output capacitance improves zero-voltage switching (ZVS) margin in resonant converters.

Pinout & Package

TO-247 package: isolated metal tab (drain), 3-pin through-hole mounting with 5.3 mm lead pitch. Thermal resistance R_thJC = 0.83 °C/W enables efficient heatsink coupling.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	High-impedance control terminal; requires 10 V drive for full enhancement; gate resistor selection directly impacts E_on/E_off trade-off.
2 (Lead)	Drain (D)	Main high-voltage power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground.
3 (Lead)	Source (S)	Power return path and gate reference node; low-inductance PCB layout critical to suppress ringing during fast dV/dt transitions.
TAB	Drain (D)	Primary thermal and electrical connection point for drain; provides lowest R_thJC path to heatsink; requires dielectric isolation when mounted to grounded chassis.

Key Features

Feature	Design Value
MDmesh M5 silicon technology	Reduces R_DS(on) by ~25% vs. prior-generation 650 V MOSFETs while maintaining same die size and voltage rating.
100% avalanche rated	Guarantees survival under worst-case unclamped inductive switching events without parameter shift or failure.
High dv/dt immunity	15 V/ns rating prevents false turn-on during fast voltage transients in bridge-leg configurations.
Low Q_gd/Q_g ratio	25 nC/64 nC = 39% - Improves Miller immunity and enables faster, more predictable turn-off behavior.
Optimized body diode	336 ns t_rr and soft recovery reduce EMI and diode-induced switching loss in synchronous rectification and PFC stages.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1.5 kW active-clamp forward or half-bridge converter operating at 85–264 VAC input.

IC Role / Device Role / Timing Role: High-voltage power switch handling 650 V blocking and 22 A peak current with sub-100 ns switching transitions.

Use Value: 125 mΩ R_DS(on) reduces conduction loss by >1.2 W vs. legacy 650 V MOSFETs, improving full-load efficiency by 0.4–0.6%.

Use Scenario: PFC boost switch in 3 kW telecom rectifier with universal AC input and digital control.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing 400 VDC bus and 22 A average current in continuous conduction mode.

Use Value: 500 mJ E_AS eliminates need for external snubbers during line surges, simplifying board layout and reducing BOM count.

Solar Inverter DC-DC Stage

EV Onboard Charger (OBC) PFC

Use Scenario: Isolated DC-DC transformer primary switch in string-level solar microinverter with 1000 V PV input.

IC Role / Device Role / Timing Role: 650 V-rated switch operating in phase-shifted full-bridge topology with ZVS-assisted turn-on.

Use Value: 68 pF C_oss lowers resonant tank energy requirement, enabling reliable ZVS down to 30% load across temperature range.

Use Scenario: Boost PFC switch in 6.6 kW bidirectional OBC handling both AC/DC and DC/AC modes.

IC Role / Device Role / Timing Role: Bidirectional high-voltage switch supporting 650 V blocking in AC/DC mode and reverse conduction in DC/AC regeneration.

Use Value: Soft-recovery body diode (Q_rr = 6 µC) minimizes reverse recovery loss during commutation, reducing junction temperature rise by 8–10 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30N65M5	Identical silicon die and electrical specs; differs only in packaging (same TO-247) and marking - STW30N65M5 is the production order code; STI30N65M5 was a pre-release variant removed in Rev 4.	No functional difference; identical use in all target applications including PFC, SMPS, and motor drives.	Select STW30N65M5 for volume procurement - it is the current, actively manufactured part with full long-term availability support.
IPW65R090CFD7	90 mΩ R_DS(on) max (vs. 139 mΩ), higher Q_g (72 nC), and integrated fast-recovery CoolSiC co-packaged diode - not silicon-only.	Better conduction loss but higher gate drive demand; suited for ultra-high-efficiency designs where SiC diode benefits outweigh cost premium.	Choose only if system-level efficiency gain justifies 35% higher unit cost and revised gate driver sizing; not drop-in compatible due to different Q_g and diode characteristics.

Compared with STI30N65M5, STW30N65M5 offers identical performance with assured supply continuity, while IPW65R090CFD7 trades higher cost and drive complexity for lower R_DS(on) and superior diode recovery - making it suitable only for next-gen efficiency-critical designs.

Availability

STI30N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, solar DC-DC converters, and EV onboard charger PFC stages requiring stable component supply and proven high-voltage ruggedness.

Supply support for STI30N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh M5 product line targets high-efficiency, high-voltage power conversion - specifically engineered to replace older planar MOSFETs in 600–650 V applications where R_DS(on) reduction and avalanche robustness are decisive.

FAQ

Is STI30N65M5 still in active production?

No - STI30N65M5 was discontinued and removed from ordering information in DS6070 Rev 4 (September 2025). STW30N65M5 is the direct, functionally identical replacement with ongoing production and full datasheet support. Aetrix Electronics maintains legacy STI30N65M5 inventory for existing design continuity but recommends migration to STW30N65M5 for new designs.

What is the maximum recommended gate resistor value for hard-switched 100 kHz operation?

For 100 kHz hard-switched operation with V_DD = 400 V and I_D = 14 A, a 4.7 Ω gate resistor is validated per Figure 18 test conditions, yielding t_d(off) = 50 ns and t_f(i) = 10 ns. Increasing beyond 10 Ω risks excessive E_off and thermal stress; values below 2.2 Ω require careful layout to avoid gate oscillation due to L_g × C_iss resonance.

Can STI30N65M5 replace STP30N65M5 in a TO-220-based design?

No - STI30N65M5 is specified only in TO-247 package (per DS6070 Rev 4 package mapping), while STP30N65M5 uses TO-220. The TO-247 has lower R_thJC (0.83 °C/W vs. 1.0 °C/W for TO-220) and higher power dissipation capability (140 W vs. 125 W), but mechanical footprint and mounting are incompatible. Direct replacement requires PCB redesign and thermal revalidation.

Does the body diode support synchronous rectification in LLC resonant converters?

Yes - the body diode exhibits soft reverse recovery (t_rr = 336 ns, Q_rr = 6 µC, I_RRM = 32 A) and low forward voltage (V_SD = 1.5 V at 22 A), enabling limited synchronous rectification in low-frequency (<150 kHz) LLC secondaries. However, dedicated SR controllers and external Schottky diodes remain preferred for >95% efficiency targets due to lower V_F and faster t_rr.

STI30N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 139mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2880 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI30N65M5 FAQ

1.How can I place an order for STI30N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI30N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI30N65M5 reliable?

The price and inventory of STI30N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI30N65M5 is usually 5 days.

3.What payment methods are accepted for STI30N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI30N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI30N65M5?

STI30N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI30N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI30N65M5?

For technical support, including STI30N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI30N65M5 requirements.

6.How does Aetrix verify that STI30N65M5 is sourced from the original manufacturer or authorized distributors?

All STI30N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI30N65M5 meets industry standards.

7.What is the process for return or replacement of STI30N65M5?

All STI30N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STI30N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI30N65M5 part is unused and in its original packaging.

Return procedure for STI30N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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