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STMicroelectronics STI30NM60N
- Part No.:
- STI30NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STI30NM60N.pdf
- Description:
- MOSFET N-CH 600V 25A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,081
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Product details
Overview
STI30NM60N from STMicroelectronics is an N-channel 600 V, 25 A, 0.1 Ω RDS(on) MDmesh™ II Power MOSFET in I²PAK (TO-262) package, designed for high-efficiency switching converters operating up to 150 °C junction temperature, with 100% avalanche tested ruggedness and low gate charge (91 nC) for fast hard-switching in SMPS and PFC stages.
For engineers reviewing the STI30NM60N datasheet, STI30NM60N pinout, STI30NM60N application, or STI30NM60N equivalent, this page delivers verified electrical ratings, thermal resistance (0.66 °C/W j-case), diode recovery performance (540 ns trr), and real-world design context for industrial power supplies and motor drives.
Technical Context
This device implements ST's second-generation MDmesh™ vertical superjunction architecture combined with a strip layout, achieving ultra-low RDS(on) × Qg figure-of-merit (0.1 Ω × 91 nC). It supports hard-switched topologies at 300–480 V bus voltages with dv/dt capability up to 15 V/ns and unclamped inductive switching robustness (EAS = 900 mJ).
The integrated body diode exhibits 1.3 V forward voltage at 25 A and 540 ns reverse recovery time at 100 V, 100 A/µs di/dt - enabling synchronous rectification replacement in medium-frequency DC-DC converters without external Schottky assistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands 80% of rated voltage during diode recovery (VDD = 480 V), ensuring safe operation in 400 V AC-input PFC stages. |
| RDS(on) max | 0.13 Ω @ VGS = 10 V, ID = 12.5 A - Enables <1.6 W conduction loss at 25 A, critical for thermally constrained I²PAK designs. |
| Qg | 91 nC - Reduces gate drive power requirement and enables use with low-current drivers (e.g., 1 A peak) in 100 kHz+ SMPS. |
| EAS | 900 mJ - Supports single-pulse unclamped inductive switching without failure, essential for relay/snubberless flyback and LLC resonant control. |
| Rthj-case | 0.66 °C/W - Allows 190 W total dissipation at TC = 25 °C, enabling high-power density in heatsink-mounted I²PAK layouts. |
| trr | 540 ns @ ISD = 25 A, di/dt = 100 A/µs - Limits turn-off switching loss and EMI generation in phase-shifted full-bridge topologies. |
Pinout & Package
I²PAK (TO-262) package: 3-pin through-hole outline with isolated drain tab, optimized for PCB-mount thermal transfer and high-voltage creepage (>4 mm between pins 1–3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Low-impedance input (Rg = 3 Ω) requiring <100 nF local decoupling; sensitive to ESD (±30 V rating). |
| 2 (D) | Drain | High-side switching node; electrically connected to metal tab - must be isolated from heatsink unless referenced to system ground. |
| 3 (S) | Source | Power return path and gate reference; low-inductance layout critical to minimize shoot-through risk in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse ruggedness up to 12 A IAR and 900 mJ EAS, eliminating need for external clamping in cost-sensitive industrial inverters. |
| Low Ciss/Coss | 2700 pF / 210 pF at 50 V - Reduces capacitive switching loss and improves zero-voltage switching (ZVS) margin in resonant converters. |
| MDmesh™ II structure | Delivers 30% lower RDS(on) × Qg vs first-gen superjunction - directly enabling >96% efficiency in 1 kW server PSUs. |
| ECOPACK® RoHS-compliant | Lead-free second-level interconnect with JEDEC JESD97 marking - satisfies industrial environmental compliance without derating. |
Applications
| Industrial Switch-Mode Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW open-frame AC-DC power supplies with universal input (90–264 V AC). IC Role / Device Role / Timing Role: High-voltage power switch in continuous conduction mode (CCM) PFC and LLC resonant half-bridge stages. Use Value: 0.66 °C/W thermal resistance enables direct heatsink mounting without thermal pads, reducing BOM cost by eliminating interface materials. |
Use Scenario: Output rectification and isolation switching in 48 V intermediate bus converters for AI accelerators. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in 300 kHz phase-shifted full-bridge topology. Use Value: 540 ns trr and 1.3 V VSD cut conduction loss by 22% vs discrete Schottky solutions at 25 A load current. |
| Solar Microinverters | Motor Drive Half-Bridge |
|
Use Scenario: DC-AC H-bridge switching stage in single-phase 300–600 V PV string inverters. IC Role / Device Role / Timing Role: High-side and low-side switch in unipolar PWM modulation with 15 V gate drive. Use Value: 15 V/ns dv/dt immunity prevents false turn-on during fast bus transients, eliminating need for negative gate bias. |
Use Scenario: Inverter leg in 750 W BLDC motor drives for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: 600 V blocking element in three-phase inverter with 100 kHz PWM carrier. Use Value: 91 nC Qg allows gate driver ICs like STGAP2S to operate within 1 A peak current limit while maintaining <50 ns dead-time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NM60N | Same die, TO-220 package; Rthj-case = 0.66 °C/W identical, but larger footprint and higher mounting torque requirement. | Better suited for bolt-down heatsinks in legacy industrial enclosures where I²PAK PCB space is constrained. | Select when mechanical mounting compatibility with existing TO-220 fixtures is mandatory and PCB area is not limiting. |
| IPP60R099C7 | Infineon CoolMOS™ C7: 650 V, 0.099 Ω, 95 nC Qg, Rthj-case = 0.55 °C/W - slightly lower RDS(on) but higher gate charge and different pinout. | Requires gate driver redesign due to non-standard source-tab pinout and tighter VGS(th) tolerance (2.5–3.5 V vs 2–4 V). | Choose only if thermal budget demands sub-0.6 °C/W j-case resistance and board layout allows rework of gate loop routing. |
Compared with STP30NM60N, STI30NM60N saves PCB area and simplifies assembly via surface-mount I²PAK footprint while matching thermal performance; versus IPP60R099C7, it offers broader VGS(th) tolerance and proven avalanche ruggedness at lower gate drive complexity.
Availability
STI30NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar microinverters, server rectifiers, and BLDC motor drives requiring stable component supply across multi-year production cycles.
Supply support for STI30NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.
STI30NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 400–600 V DC-link systems where low RDS(on) × Qg and avalanche robustness are critical.
FAQ
What is the maximum continuous drain current for STI30NM60N at 100 °C case temperature?
The maximum continuous drain current is 15.8 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the I²PAK package and ensures junction temperature remains ≤150 °C under steady-state conduction with proper heatsinking.
Does STI30NM60N have an integrated body diode, and what are its key recovery parameters?
Yes, it features an integrated fast-recovery body diode with 1.3 V forward voltage at 25 A and 540 ns reverse recovery time (trr) at 100 V, 100 A/µs di/dt. The diode also delivers 10 µC reverse recovery charge (Qrr) and 36 A peak reverse recovery current (IRRM), enabling use in synchronous rectification roles.
Can STI30NM60N be used in avalanche mode, and what are the rated limits?
Yes - it is 100% avalanche tested per datasheet. Rated repetitive avalanche current is 12 A (IAR), and single-pulse avalanche energy is 900 mJ (EAS) starting from 25 °C junction temperature. Operation beyond these limits requires thermal modeling to avoid cumulative junction damage.
Is STI30NM60N RoHS-compliant and lead-free?
Yes - it is manufactured in ECOPACK® packaging with lead-free second-level interconnect, compliant with JEDEC Standard JESD97 and EU RoHS Directive 2011/65/EU. The inner box label indicates the lead-free category, and soldering profiles follow standard Pb-free reflow guidelines (peak 260 °C).
STI30NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 91 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2700 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262 (I2PAK)
STI30NM60N FAQ
1.How can I place an order for STI30NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STI30NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STI30NM60N reliable?
The price and inventory of STI30NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI30NM60N is usually 5 days.
3.What payment methods are accepted for STI30NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI30NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STI30NM60N?
STI30NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STI30NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STI30NM60N?
For technical support, including STI30NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI30NM60N requirements.
6.How does Aetrix verify that STI30NM60N is sourced from the original manufacturer or authorized distributors?
All STI30NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI30NM60N meets industry standards.
7.What is the process for return or replacement of STI30NM60N?
All STI30NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STI30NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STI30NM60N part is unused and in its original packaging.
Return procedure for STI30NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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