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STMicroelectronics STI32N65M5

Name: STI32N65M5
Brand: STMicroelectronics
SKU: STI32N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI32N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI32N65M5.pdf

Description:: MOSFET N-CH 650V 24A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STI32N65M5 from STMicroelectronics is an N-channel 650 V, 24 A Power MOSFET in D²PAK (TO-263) package, fabricated with MDmesh M5 vertical process technology. It delivers 95 mΩ typical R_DS(on), 72 nC total gate charge, and 150 W power dissipation at T_C = 25 °C, enabling high-efficiency switching in offline SMPS and PFC stages.

For engineers reviewing the STI32N65M5 datasheet, STI32N65M5 pinout, STI32N65M5 application, or STI32N65M5 equivalent, key selection criteria include avalanche ruggedness (650 mJ E_AS), fast diode recovery (375 ns t_rr at 25 °C), low C_iss (3320 pF), and thermal resistance (0.83 °C/W R_thJC).

Technical Context

This MOSFET employs ST's MDmesh M5 superjunction architecture to achieve ultra-low on-resistance while maintaining robust 650 V breakdown voltage (V_(BR)DSS ≥ 650 V). Its optimized charge profile-Q_gs = 17 nC, Q_gd = 29 nC-enables precise control of dv/dt during hard-switching transitions.

The integrated body diode exhibits low forward voltage (V_SD = 1.5 V at I_SD = 24 A) and tightly controlled reverse recovery (Q_rr = 6 µC, I_RRM = 33 A), making it suitable for continuous conduction mode (CCM) PFC and resonant LLC topologies where diode losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Ensures reliable operation in 400 V AC mains-derived 600 V DC bus applications without derating.
R_DS(on) max	119 mΩ at V_GS = 10 V, I_D = 12 A - Limits conduction loss to ≤28.5 W at full 24 A load (T_C = 25 °C).
Q_g	72 nC - Enables efficient gate driving with standard 1–2 A peak drivers; reduces switching loss in 65–100 kHz range.
E_AS	650 mJ - Supports unclamped inductive switching without failure under transient overloads (e.g., output short-circuit).
t_r/t_f	12 ns / 16 ns - Minimizes overlap loss in hard-switched converters; supports >200 kHz operation with careful layout.
R_thJC	0.83 °C/W - Allows 150 W dissipation with ≤125 °C junction rise above case, enabling compact heatsink design.
dv/dt rating	15 V/ns - Withstands rapid voltage transients in bridge-leg configurations without spurious turn-on.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for enhanced thermal performance and mechanical robustness. Standard 3-pin surface-mount outline with 2.54 mm lead pitch and 10.0 mm × 8.95 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain (high-side switch node)	Exposed metal tab electrically connected to drain; must be isolated from heatsink unless referenced to same potential.
G (Pin 1)	Gate (control input)	High-impedance MOS gate requiring <2.5 V threshold; sensitive to ESD; requires low-inductance driver path.
S (Pin 3)	Source (return path)	Reference node for gate drive; carries full load current and source-diode recovery current; critical for Kelvin sensing.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS ≥ 650 mJ across production lot-no screening failures in surge-limited designs.
MDmesh M5 process	Reduces R_DS(on)·A by 40% vs prior-generation superjunction MOSFETs-enabling smaller die size without sacrificing voltage rating.
Low Q_gd/Q_g ratio	29/72 = 0.40 - Improves Miller immunity and enables stable operation with high dv/dt (>10 V/ns) in half-bridge configurations.
Optimized body diode	t_rr = 375 ns, Q_rr = 6 µC at 25 °C - Reduces diode-induced switching loss and EMI in boost and LLC converters.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's ECOPACK2 specification-suitable for industrial and consumer end-equipment.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating in continuous conduction mode (CCM) with 3.3 kW output.

IC Role / Device Role / Timing Role: Main switch in interleaved two-phase boost PFC front-end, switching at 65 kHz with synchronous rectification.

Use Value: 95 mΩ R_DS(on) and 6 µC Q_rr reduce conduction and recovery losses by 18% vs legacy 600 V MOSFETs, improving full-load efficiency to ≥96.2%.

Use Scenario: 3 kW industrial motor drive with active front-end (AFE) rectifier feeding DC link.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase Vienna rectifier, handling 24 A RMS line current with 100 kHz PWM.

Use Value: 15 V/ns dv/dt rating and 0.83 °C/W R_thJC prevent false triggering and thermal runaway during regenerative braking transients.

Telecom Rectifier Module

EV Onboard Charger (OBC) PFC

Use Scenario: -48 V telecom rectifier with universal AC input (90–264 VAC) and 1.5 kW output.

IC Role / Device Role / Timing Role: Critical switch in transition-mode (TM) boost converter, operating near zero-current switching (ZCS) boundary.

Use Value: Low C_iss (3320 pF) and tight V_GS(th) (3–5 V) enable stable TM operation across temperature, reducing audible noise and EMI.

Use Scenario: Bidirectional OBC with dual-active-bridge (DAB) topology and 6.6 kW AC/DC + DC/AC capability.

IC Role / Device Role / Timing Role: High-side switch in unidirectional PFC stage, subjected to repetitive avalanche stress during grid fault conditions.

Use Value: 650 mJ E_AS and 8 A I_AR allow safe clamping of 10 ms overvoltage events without derating or external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW32N65M5	Same die, TO-247 package; R_thJC = 0.45 °C/W; higher creepage/clearance; no surface-mount constraint.	Better thermal performance but requires through-hole assembly; unsuitable for ultra-thin or double-sided PCBs.	Select when maximum power density is secondary to thermal margin and mechanical ruggedness.
IPP65R099C7	Infineon CoolMOS™ C7; 650 V, 99 mΩ typ.; Q_g = 62 nC; lower C_oss (47 pF vs 75 pF); no guaranteed avalanche rating.	Superior light-load efficiency in DCM/QR flyback; lacks E_AS spec-requires external clamping for inductive surges.	Select for cost-sensitive consumer adapters where avalanche stress is absent and layout allows tighter gate drive.

Compared with STW32N65M5, STI32N65M5 trades 0.38 °C/W higher thermal resistance for SMT manufacturability and board space savings; versus IPP65R099C7, it provides verified avalanche ruggedness at the expense of slightly higher dynamic losses in soft-switching topologies.

Availability

STI32N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STI32N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STI32N65M5 belongs to the MDmesh™ M5 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability 600–650 V switching applications in industrial SMPS, solar inverters, and EV infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STI32N65M5 supports 15 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6032 Rev 6. This derating reflects thermal limits of the D²PAK package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does STI32N65M5 have a fully rated avalanche capability?

Yes-STI32N65M5 is 100% production-tested for single-pulse avalanche energy (E_AS) of 650 mJ at T_J = 25 °C, with I_AR = 8 A. This rating is guaranteed per datasheet Table 3 and validated using unclamped inductive load test circuit Figure 17.

Can STI32N65M5 replace STB32N65M5 in existing designs?

Yes-STI32N65M5 shares identical electrical specifications, thermal characteristics, and pinout with STB32N65M5. Both use the same MDmesh M5 die and D²PAK package; only marking and tape/reel packaging differ per ST's 2018 datasheet split (Rev 5).

What is the gate threshold voltage range and its temperature dependence?

V_GS(th) is specified from 3 V to 5 V at 25 °C (Table 4), with normalized variation of ±10% across –55 °C to 150 °C (Figure 9). This tight spread ensures consistent turn-on behavior in wide-temperature industrial environments without gate drive overdesign.

STI32N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 119mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3320 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI32N65M5 FAQ

1.How can I place an order for STI32N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI32N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI32N65M5 reliable?

The price and inventory of STI32N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI32N65M5 is usually 5 days.

3.What payment methods are accepted for STI32N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI32N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI32N65M5?

STI32N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI32N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI32N65M5?

For technical support, including STI32N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI32N65M5 requirements.

6.How does Aetrix verify that STI32N65M5 is sourced from the original manufacturer or authorized distributors?

All STI32N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI32N65M5 meets industry standards.

7.What is the process for return or replacement of STI32N65M5?

All STI32N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STI32N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI32N65M5 part is unused and in its original packaging.

Return procedure for STI32N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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