STMicroelectronics STI33N60M2

Overview

STI33N60M2 from STMicroelectronics is an N-channel 600 V, 108 mΩ typ., 26 A Power MOSFET in I²PAK package, engineered for high-efficiency switching in resonant converters and LLC topologies. It features extremely low gate charge (45.5 nC), optimized output capacitance profile (Coss = 85 pF), and 100% avalanche tested ruggedness (EAS = 450 mJ), enabling robust operation in high-frequency SMPS designs.

For engineers reviewing the STI33N60M2 datasheet, STI33N60M2 pinout, STI33N60M2 application, or STI33N60M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), Zener-protected gate, and SOA compliance at TJ = 150 °C in continuous and pulsed modes.

Technical Context

This MDmesh M2 technology MOSFET uses a strip layout and enhanced vertical structure to minimize conduction and switching losses simultaneously. Its Coss eq. of 135 pF (0–480 V) supports soft-switching in resonant converters, while low Crss (2.5 pF) reduces Miller-induced turn-on risk under high dv/dt conditions.

The device integrates a Zener-protected gate (±25 V rating) and exhibits stable VGS(th) (2–4 V) with <10% variation from –50 °C to 150 °C. Its source-drain diode delivers fast recovery (trr = 375 ns at TJ = 25 °C) and low Qrr (5.6 µC), critical for synchronous rectification and bidirectional power flow.

Key Specifications

Pinout & Package

I²PAK (TO-263) package: insulated plastic case with exposed drain tab for direct heatsink mounting; footprint compatible with standard SMD reflow processes and manual soldering; ECOPACK2 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP33N60M2, STI33N60M2 offers surface-mount compatibility and built-in thermal interface via insulated tab; versus IPP60R190C7, it trades slightly higher Qg for guaranteed avalanche ruggedness and gate protection-critical in unregulated or fault-prone industrial systems.

Availability

STI33N60M2 is available at Aetrix Electronics and suitable for LLC resonant converters, industrial AC-DC power supplies, telecom rectifiers, and EV onboard charger auxiliary stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STI33N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STI33N60M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, developed specifically for high-efficiency, high-frequency switched-mode power supplies where low RDS(on) × Qg and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for STI33N60M2 at case temperature 100 °C?

The maximum continuous drain current ID is 16 A at TC = 100 °C, as specified in Table 1 of DS9497 Rev 4. This value is limited by junction temperature (TJ max = 150 °C) and accounts for thermal resistance RthJC = 0.66 °C/W in the I²PAK package. Derating follows a linear curve above 25 °C case temperature.

Does STI33N60M2 have integrated gate protection?

Yes, STI33N60M2 includes an integrated Zener diode between gate and source, rated for ±25 V, as confirmed in the "Features" section and Absolute Maximum Ratings (Table 1, VGS = ±25 V). This eliminates the need for external gate clamping components in most applications.

Can STI33N60M2 replace STP33N60M2 in an existing TO-220 design?

No direct drop-in replacement: STI33N60M2 uses I²PAK (TO-263) packaging with different footprint, thermal pad layout, and lead pitch. While electrically identical, mechanical redesign is required for PCB land pattern, heatsink interface, and soldering process-especially due to the insulated drain tab.

What is the typical output capacitance (Coss) and why does it matter in resonant converters?

Coss is 85 pF at VDS = 100 V (Table 5), with an equivalent value of 135 pF across 0–480 V. In LLC converters, Coss forms part of the resonant tank with external inductor and capacitor; its linearity and low magnitude directly impact ZVS achievement, frequency regulation, and light-load efficiency.