STMicroelectronics STI34N65M5

Overview

STI34N65M5 from STMicroelectronics is an N-channel 650 V, 90 mΩ typ. (110 mΩ max), 28 A MDmesh™ M5 Power MOSFET in TO-220 package, designed for high-efficiency hard-switching and ZVS SMPS topologies including PFC, LLC resonant converters, and industrial motor drives. It features 100% avalanche tested ruggedness, 50 V/ns MOSFET dv/dt capability, and low Qgd (28 nC) for fast, controlled turn-off.

For engineers reviewing the STI34N65M5 datasheet, STI34N65M5 pinout, STI34N65M5 application, or STI34N65M5 equivalent, this device is selected for high-voltage DC-DC conversion where low conduction loss, robust unclamped inductive switching, and thermal stability at TJ = 150 °C are critical design requirements.

Technical Context

This MOSFET employs ST's MDmesh M5 vertical superjunction process with PowerMESH horizontal layout, delivering ultra-low RDS(on) × area trade-off and reduced output charge (Qoss = 63 pF energy-related). Its gate threshold voltage (VGS(th) = 3–5 V) ensures stable turn-on under wide temperature range (−50 to 150 °C), while its 150 °C max junction temperature supports high-power density designs without derating.

The device integrates a fast-recovery body diode (trr = 350 ns @ 25 °C, 422 ns @ 150 °C; Qrr = 5.6–7.4 µC) optimized for synchronous rectification and freewheeling in bridge configurations. Its 190 W total power dissipation (TC = 25 °C) and 0.66 °C/W RthJC enable direct heatsink mounting in compact industrial power supplies.

Key Specifications

Pinout & Package

STI34N65M5 is housed in a TO-220 package with isolated tab (Type A), where the drain is connected to the metal tab for direct thermal coupling to heatsinks. The plastic body provides electrical isolation between tab and leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP34N65M5, STI34N65M5 offers identical electrical performance with optimized logistics for automated SMT lines; versus IPP65R110CFD7, it delivers lower switching loss in hard-switched topologies due to superior Q_gd/Q_g ratio and faster turn-off.

Availability

STI34N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and EV onboard charger designs requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for STI34N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing in Europe and Asia.

This device belongs to the MDmesh™ M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial, computing, and renewable energy systems.

FAQ

Is STI34N65M5 pin-compatible with STP34N65M5?

Yes-both share identical TO-220 package outline, pin assignment (G-D-S), and mechanical footprint. The only distinction is packaging format: STI34N65M5 ships in tape-and-reel for automated assembly, while STP34N65M5 uses tube packaging for manual or low-volume use. Electrical and thermal specs are fully identical.

What is the maximum recommended gate resistor value for hard-switching at 100 kHz?

For reliable 100 kHz hard-switching with minimal overshoot, ST recommends R_G ≤ 10 Ω. At 4.7 Ω (per datasheet test condition), t_d(off) = 59 ns and t_f(i) = 7.5 ns are achieved. Increasing R_G beyond 15 Ω risks excessive switching loss and thermal runaway under full-load conditions.

Does STI34N65M5 require a negative gate turn-off voltage?

No-its gate threshold voltage (3–5 V) and ±25 V absolute maximum V_GS rating allow safe operation with 0 V to +12 V or +15 V gate drive. Negative turn-off is unnecessary; however, a −5 V clamp improves noise immunity in high-dV/dt environments like motor drives.

Can STI34N65M5 replace STW34N65M5 in existing TO-247 layouts?

No-STW34N65M5 uses TO-247 package with different pin spacing, tab orientation, and thermal interface. STI34N65M5's TO-220 footprint is incompatible. For drop-in replacement, STB34N65M5 (D²PAK) or STP34N65M5 (same TO-220) are preferred; TO-247 alternatives require board redesign.