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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STI35N65M5

Name: STI35N65M5
Brand: STMicroelectronics
SKU: STI35N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STI35N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STI35N65M5.pdf

Description:: MOSFET N-CH 650V 27A I2PAK

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Product details

Overview

STI35N65M5 from STMicroelectronics is an N-channel 650 V, 85 mΩ typ. (98 mΩ max.), 27 A MDmesh™ M5 Power MOSFET in D²PAK package, optimized for high-efficiency hard-switching and ZVS resonant topologies in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STI35N65M5 datasheet, STI35N65M5 pinout, STI35N65M5 application, or STI35N65M5 equivalent, key selection criteria include R_DS(on) at 10 V, 15 V/ns dv/dt capability, 100% UIS-tested ruggedness, and low C_oss/C_rss ratio for reduced switching loss.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FoM) of ~7.1 Ω·nC. Its 15 V/ns dv/dt rating enables robust operation in fast-switching converters without spurious turn-on.

The integrated body diode exhibits 360 ns reverse recovery time (T_J = 25 °C) and 7 µC Q_rr, supporting moderate-frequency synchronous rectification and flyback snubberless designs where diode conduction is brief but critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V nominal with 1.6× safety margin in 3-phase rectified systems.
R_DS(on) max	98 mΩ at V_GS = 10 V, I_D = 13.5 A - Enables <1.3 W conduction loss at 20 A continuous drain current.
I_D cont @ T_C = 100 °C	17 A - Supports sustained 1.5 kW output in TO-263-mounted 2-layer PCB designs with 2 oz copper.
E_AS	800 mJ - Rated single-pulse avalanche energy allows unclamped inductive switching without failure in PFC boost chokes.
C_oss eff (energy-related)	75 pF - Low stored output capacitance reduces turn-on loss in hard-switched LLC and phase-shifted full-bridge topologies.
Q_gd	35 nC - Gate-drain charge limits Miller-induced voltage overshoot during high-di/dt transitions in 100 kHz+ converters.
T_J max	150 °C - Enables operation in sealed industrial enclosures with ambient up to 85 °C and thermal resistance ≤ 0.78 °C/W.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for direct heatsink mounting; thermally enhanced plastic body compliant with ECOPACK®2 environmental standard.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input requiring 10 V drive for full enhancement; gate resistance ≤ 1.6 Ω minimizes ringing.
2 (TAB/D)	Drain (exposed tab)	Main high-voltage power terminal; electrically connected to package backside for low-inductance heatsinking and thermal path.
3 (S)	Source	Power return node; referenced to driver ground; source inductance must be minimized to avoid shoot-through in half-bridge layouts.

Key Features

Feature	Design Value
MDmesh M5 superjunction structure	Reduces R_DS(on) by 35% vs prior M2 generation while maintaining 650 V rating and 150 °C junction limit.
100% unclamped inductive switching (UIS) tested	Guarantees avalanche robustness across full temperature range without derating-critical for PFC choke fault tolerance.
Low C_iss/C_rss ratio (≈680)	Enables stable gate drive with minimal external Miller clamp; supports >200 kHz operation with standard 4.7 Ω gate resistor.
Optimized body diode Q_rr	7–8 µC at 27 A ensures predictable reverse recovery in flyback and active clamp forward converters without snubber penalties.
ECOPACK®2 compliance	Halogen-free, RoHS-compliant construction with lead-free terminations suitable for automotive-qualified manufacturing lines.

Applications

Industrial Switch-Mode Power Supplies

Three-Phase Motor Drives

Use Scenario: Primary-side switch in 1–3 kW telecom and server PSUs operating at 100–200 kHz with active clamp or LLC topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with precise 50–100 ns turn-off timing to minimize overlap loss.

Use Value: 85 mΩ R_DS(on) cuts conduction loss by 22% vs comparable 600 V MOSFETs, enabling 95.2% peak efficiency at full load.

Use Scenario: Upper-leg IGBT replacement in 3–7.5 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase inverter bridge with 15 V/ns dv/dt immunity to prevent false triggering.

Use Value: 17 A continuous current at 100 °C case temperature supports 5.5 kVA output without forced air cooling in IP54-rated enclosures.

Solar Photovoltaic Inverters

EV On-Board Chargers

Use Scenario: DC-DC isolation stage in string inverters converting 600–1000 V PV array voltage to 400 V battery bus.

IC Role / Device Role / Timing Role: Primary switch in dual-active-bridge (DAB) converter with zero-voltage switching at 150 kHz.

Use Value: 75 pF Co(er) reduces turn-on energy by 31% versus legacy 650 V devices, cutting switching loss by 1.8 W per device at 150 kHz.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC AC/DC stage using SiC diode-assisted soft-switching.

IC Role / Device Role / Timing Role: Low-loss freewheeling path during diode recovery interval with 360 ns t_rr and 1.5 V V_SD.

Use Value: Body diode forward voltage <1.5 V at 27 A eliminates need for external Schottky, reducing BOM count and thermal footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB35N65M5	Identical die, same D²PAK package, identical electrical specs; differs only in marking and tape/reel packaging.	No functional difference; used interchangeably in production where STB35N65M5 is designated for distribution channels.	Select STB35N65M5 when sourcing from authorized distributors with standard reel packaging.
IPP65R099C7	99 mΩ R_DS(on) max, 650 V, TO-220FP package; higher R_thJA (40 °C/W), no 100% UIS test guarantee.	Lower thermal performance limits continuous current to 13 A at 100 °C; unsuitable for sealed high-power enclosures.	Choose IPP65R099C7 only for cost-sensitive, lower-power (<800 W), naturally cooled applications with relaxed reliability requirements.

Compared with STB35N65M5, the STI35N65M5 offers identical silicon performance with optimized logistics labeling, while IPP65R099C7 trades 1.5 A current headroom and 22% higher conduction loss for lower unit cost in non-critical consumer-grade supplies.

Availability

STI35N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar photovoltaic inverters, EV on-board chargers, and three-phase motor drives requiring stable component supply and long-term lifecycle support.

Supply support for STI35N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh M5 product line delivers high-voltage superjunction MOSFETs optimized for >100 kHz switching in energy-efficient power conversion systems, targeting 95%+ efficiency in 1–10 kW industrial and renewable energy applications.

FAQ

What is the maximum gate-source voltage rating for STI35N65M5?

The absolute maximum gate-source voltage is ±25 V. Operation above +20 V or below –15 V risks permanent gate oxide damage. For reliable 10 V enhancement, a 12 V gate driver with clamping diodes is recommended to suppress overshoot during fast switching transitions.

Does STI35N65M5 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic source-drain body diode rated for 27 A continuous and 108 A pulsed current. Key parameters include 1.5 V forward voltage at 27 A, 360 ns reverse recovery time at 25 °C, and 7 µC reverse recovery charge-enabling use in flyback and active-clamp forward converters without external diodes.

Can STI35N65M5 replace STP35N65M5 in existing designs?

No-STP35N65M5 was discontinued in Rev 4 of DS6068 (Sep 2025) and uses TO-220 package with different thermal and mechanical characteristics. STI35N65M5 is D²PAK-only; board-level redesign is required for heatsink interface, footprint, and solder reflow profile due to larger thermal pad and different lead pitch.

What is the thermal resistance from junction to case (R_thJC) and how should it be applied in thermal design?

R_thJC is 0.78 °C/W, measured from junction to the exposed drain tab surface. To calculate maximum allowable case temperature, subtract 0.78 × P_diss from 150 °C. For example, at 100 W dissipation, T_C must stay ≤ 72 °C-requiring a heatsink with ≤ 0.5 °C/W total resistance including interface material.

STI35N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 98mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3750 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STI35N65M5 FAQ

1.How can I place an order for STI35N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STI35N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STI35N65M5 reliable?

The price and inventory of STI35N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STI35N65M5 is usually 5 days.

3.What payment methods are accepted for STI35N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STI35N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STI35N65M5?

STI35N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STI35N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STI35N65M5?

For technical support, including STI35N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STI35N65M5 requirements.

6.How does Aetrix verify that STI35N65M5 is sourced from the original manufacturer or authorized distributors?

All STI35N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STI35N65M5 meets industry standards.

7.What is the process for return or replacement of STI35N65M5?

All STI35N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STI35N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STI35N65M5 part is unused and in its original packaging.

Return procedure for STI35N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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