STMicroelectronics STI400N4F6

Overview

STI400N4F6 from STMicroelectronics is an N-channel 40 V, 120 A Power MOSFET in I²PAK package, featuring 1.7 mΩ max R_DS(on) at V_GS = 10 V, ±20 V gate-source voltage rating, and 300 W total power dissipation at T_C = 25 °C. It is optimized for high-current switching in motor drives and DC-DC converters.

For engineers reviewing the STI400N4F6 datasheet, STI400N4F6 pinout, STI400N4F6 application, or STI400N4F6 equivalent, this device supports high-efficiency power conversion with low gate charge (377 nC), high avalanche ruggedness, and thermal resistance of 0.5 °C/W junction-to-case - critical for thermal management in compact industrial inverters and battery-powered systems.

Technical Context

This MOSFET employs ST's 6th-generation STripFET™ VI DeepGATE™ technology with a redesigned gate structure to minimize conduction and switching losses. Its 1.7 mΩ R_DS(on) enables high-current operation up to 120 A continuous (package-limited) and 480 A pulsed, while maintaining robust avalanche capability.

The device delivers low dynamic parameters: 20,000 pF input capacitance, 1740 pF output capacitance, and 1305 pF reverse transfer capacitance at V_DS = 25 V. Switching performance is characterized with 10 V gate drive, 20 V drain supply, and 4.7 Ω external gate resistor under standard test conditions.

Key Specifications

Pinout & Package

The STI400N4F6 is housed in an I²PAK (TO-262) package with three terminals: Gate (pin 1), Drain (pin 2), and Source (pin 3). The metal tab is electrically connected to the Drain and serves as the primary heat sink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFB4115PBF and IXFH40N40P, the STI400N4F6 delivers superior conduction efficiency at 40 V due to its 1.7 mΩ R_DS(on), making it optimal for high-current, low-voltage switching where thermal density and power loss are critical constraints.

Availability

STI400N4F6 is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and battery protection circuits requiring stable component supply and consistent parametric performance across production lots.

Supply support for STI400N4F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The STripFET™ VI DeepGATE™ product line targets high-efficiency power conversion, emphasizing ultra-low R_DS(on), fast switching, and ruggedness in compact packages for next-generation motor control and energy infrastructure.

FAQ

What is the maximum continuous drain current for STI400N4F6 at 100 °C case temperature?

The STI400N4F6 supports 120 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the preliminary datasheet. This rating is package-limited and assumes adequate heatsinking to maintain case temperature at or below 100 °C under steady-state operation.

Is the metal tab of the I²PAK package electrically isolated?

No, the metal tab is internally connected to the Drain terminal (pin 2). It must be electrically insulated from the heatsink or chassis unless the circuit design intentionally references the heatsink to the Drain potential. Use of insulating pads or shoulder washers is required in grounded-chassis applications.

Does STI400N4F6 have built-in ESD protection on the gate?

Yes, the device incorporates gate oxide protection structures rated for ≥2 kV HBM per JEDEC JS-001. However, handling precautions remain essential: use grounded wrist straps, conductive foam, and ESD-safe workstations during assembly to prevent latent damage from static discharge.

Can STI400N4F6 replace STP400N4F6 in existing TO-220 layouts?

No - STI400N4F6 uses I²PAK (TO-262) footprint, which differs mechanically from TO-220. Pin spacing, tab shape, and mounting hole positions are incompatible. Board redesign is required; thermal performance may improve due to lower R_thj-case (0.5 °C/W vs. ~0.75 °C/W for TO-220), but mechanical fit is not interchangeable.